DRV835x 100-V Three-Phase Smart Gate Driver

1 Features

9 to 100-V, Triple half-bridge gate driver
- Optional integrated buck regulator
- Optional triple low-side current shunt amplifiers
Smart gate drive architecture
- Adjustable slew rate control for EMI performance
- V_GS handshake and minimum dead-time insertion to prevent shoot-through
- 50-mA to 1-A peak source current
- 100-mA to 2-A peak sink current
- dV/dt mitigation through strong pulldown
Integrated gate driver power supplies
- High-side doubler charge pump For 100% PWM duty cycle control
- Low-side linear regulator
Integrated LM5008A buck regulator
- 6 to 95-V operating voltage range
- 2.5 to 75-V, 350-mA output capability
Integrated triple current shunt amplifiers
- Adjustable gain (5, 10, 20, 40 V/V)
- Bidirectional or unidirectional support
6x, 3x, 1x, and independent PWM modes
- Supports 120° sensored operation
SPI or hardware interface available
Low-power sleep mode (20 µA at V_VM = 48-V)
Integrated protection features
- VM undervoltage lockout (UVLO)
- Gate drive supply undervoltage (GDUV)
- MOSFET V_DS overcurrent protection (OCP)
- MOSFET shoot-through prevention
- Gate driver fault (GDF)
- Thermal warning and shutdown (OTW/OTSD)
- Fault condition indicator (nFAULT)