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  • INA118 Precision, Low-Power Instrumentation Amplifier

    • SBOS027C September   2000  – September 2022 INA118

      PRODUCTION DATA  

  • CONTENTS
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  • INA118 Precision, Low-Power Instrumentation Amplifier
  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Noise Performance
      2. 8.4.2 Input Common-Mode Range
      3. 8.4.3 Input Protection
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Setting the Gain
        2. 9.2.2.2 Dynamic Performance
        3. 9.2.2.3 Offset Trimming
        4. 9.2.2.4 Input Bias Current Return Path
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Low-Voltage Operation
      2. 9.3.2 Single-Supply Operation
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  11. 11Mechanical, Packaging, and Orderable Information
  12. IMPORTANT NOTICE

Package Options

Mechanical Data (Package|Pins)
  • D|8
    • MSOI002K
  • P|8
    • MPDI001B
Thermal pad, mechanical data (Package|Pins)
Orderable Information
  • sbos027c_oa
  • sbos027c_pm
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DATA SHEET

INA118 Precision, Low-Power Instrumentation Amplifier

1 Features

  • A newer version of this device is now available: INA818
  • Low offset voltage: 50 µV, maximum
  • Low drift: 0.5 µV/°C, maximum
  • Low input bias current: 5 nA, maximum
  • High CMR: 110 dB, minimum
  • Inputs protected to ±40 V
  • Wide supply range: ±2.25 to ±18 V
  • Low quiescent current: 350 µA
  • Packages: 8-Pin plastic DIP, SO-8

2 Applications

  • Pressure transmitter
  • Temperature transmitter
  • Weigh scale
  • Electrocardiogram (ECG)
  • Analog input module
  • Data acquisition (DAQ)

3 Description

The INA118 is a low-power, general-purpose instrumentation amplifier offering excellent accuracy. The versatile, three op amp design and small size make this device an excellent choice for a wide range of applications. Current-feedback input circuitry provides wide bandwidth, even at high gain (70 kHz at G = 100).

A single external resistor sets any gain from 1 to 10000. Internal input protection can withstand up to ±40 V without damage.

The INA118 is laser-trimmed for low offset voltage (50 µV), drift (0.5 µV/°C), and high common-mode rejection (110 dB at G = 1000). The INA118 operates with power supplies as low as ±2.25 V, and quiescent current is only 350 µA, making this device an excellent choice for battery-operated systems.

The INA118 is available in 8-pin plastic DIP and SO-8 surface-mount packages, and specified for the –40°C to +85°C temperature range.

The upgraded INA818 offers a lower input stage offset voltage (35 µV, maximum), lower input bias current (0.5 nA maximum) and lower noise (8 nV/√Hz) at the same quiescent current. See the Device Comparison Table for a selection of precision instrumentation amplifiers from Texas Instruments.

Package Information
PART NUMBER PACKAGE(1) BODY SIZE (NOM)
INA118 SOIC (8) 3.91 mm × 4.90 mm
PDIP (8) 6.35 mm × 9.81 mm
(1) For all available packages, see the package option addendum at the end of the data sheet.
Simplified Schematic

4 Revision History

Changes from Revision B (April 2019) to Revision C (September 2022)

  • Remove "a newer version of this device is now available: INA818" text from titleGo
  • Changed minimum supply voltage from ±1.35 V to ±2.25 V and from 2.7 V to 4.5 V throughout documentGo
  • Changed Applications to link to latest end-equipment on ti.comGo
  • Changed minimum supply voltage from ±1.35 V to ±2.25 VGo
  • Changed resistors in Simplified Schematic from 60 kΩ to 40 kΩGo
  • Changed minimum and maximum input common-mode voltage from V– + 1.1 V and V+ – 1 V to V– + 2 V and V+ – 2 V respectively in Recommended Operating Conditions Go
  • Changed minimum and maximum ambient temperature from –55°C and +150°C to –40°C and +125°C respectively in Recommended Operating Conditions Go
  • Added VCM = 0 V to test conditions below title in Electrical Characteristics Go
  • Changed input offset voltage vs temperature test condition from TA = TMIN to TMAX to TA = –40°C to +85°C in Electrical Characteristics Go
  • Changed input offset voltage vs power supply test condition from VS = ±1.35 V to ±18 V to VS = ±2.25 V to ±18 V in Electrical Characteristics Go
  • Changed high-side linear input voltage range from (V+) – 1 V minimum and (V+) – 0.65 V typical to (V+) – 2 V minimum and (V+) – 1.4 V typical in Electrical Characteristics Go
  • Changed low-side linear input voltage range from (V–) + 1.1 V minimum and (V–) + 0.95 V typical to (V–) + 2 V minimum and (V–) + 1.2 V typical in Electrical Characteristics Go
  • Added test condition of TA = –40°C to +85°C to bias current vs temperature and offset current vs temperature in Electrical Characteristics Go
  • Added test condition of TA = –40°C to +85°C to gain vs temperature and 50-kΩ resistance vs temperature in Electrical Characteristics Go
  • Changed single supply output voltage test condition from VS = 2.7 V/0 V to V+ = 4.5 V, V– = 0 V in Electrical Characteristics Go
  • Deleted power supply voltage range specification from Electrical Characteristics Go
  • Deleted temperature range specifications from Electrical Characteristics Go
  • Changed Figures 7-3, 7-4, 7-5, 7-6, 7-7, 7-8, 7-11, 7-12, 7-18, 7-19, and 7-20 in Typical Characteristics Go
  • Changed FET transistor input current limit from approximately 1.5-5 mA to 6 mA in Overview Go
  • Deleted internal node equations in Overview and Functional Block Diagram Go
  • Changed schematic in Functional Block Diagram Go
  • Changed linear input voltage range in Input Common-Mode Range and Single-Supply Operation Go
  • Changed FET transistor input current limit from approximately 1.5-5 mA to 6 mA in Input Protection Go
  • Changed resistors in Figure 9-1 from 60 kΩ to 40 kΩ in Typical Application Go
  • Changed minimum supply voltage from ±1.35 V to ±2.25 V in Low-Voltage Operation Go
  • Changed minimum supply voltage from 2.7 V to 4.5 V in Single-Supply Operation Go
  • Changed input common-mode range description in Single-Supply Operation Go
  • Changed Figure 10-5 to use a 5-V supply voltageGo

Changes from Revision A (January 2016) to Revision B (April 2019)

  • Added information about the newer, upgraded INA818 Go
  • Added Device Comparison Table Go

Changes from Revision * (September 2000) to Revision A (January 2016)

  • Added ESD Ratings table, Feature Description section, Device Functional Modes section, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section. Go

 
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