SBOS914F October   2018  – April 2021 INA592

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: G = 1/2
    6. 7.6 Electrical Characteristics: G = 2
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Basic Power Supply and Signal Connections
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Operating Voltage
          2. 9.2.1.2.2 Offset Voltage Trim
          3. 9.2.1.2.3 Input Voltage Range
          4. 9.2.1.2.4 Capacitive Load Drive Capability
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Additional Applications
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • G = 1/2 amplifier
  • G = 2 amplifier
  • Low offset voltage: 40 μV (maximum)
  • Low offset voltage drift: ±2 μV/°C (maximum)
  • Low noise: 18 nV/√Hz at 1 kHz
  • Low gain error: ±0.03% (maximum)
  • High common-mode rejection: 88 dB (minimum)
  • Wide bandwidth: 2 MHz GBW
  • Low quiescent current: 1.1 mA per amplifier
  • High slew rate: 18 V/μs
  • High capacitive load drive capability: 500 pF
  • Wide supply range:
    • Single supply: 4.5 V to 36 V
    • Dual supply: ±2.25 V to ±18 V
  • Specified temperature range:
    –40°C to +125°C
  • Packages: 8-Pin MSOP and SOIC, 10-pin VSON