JAJSHJ6B December   2011  – June 2019 AFE030

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      ブロック図
  4. 4 改訂履歴
  5. 5 概要 (続き)
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Thermal Information
    4. 7.4  Electrical Characteristics: Transmitter (Tx), Tx_DAC
    5. 7.5  Electrical Characteristics: Transmitter (Tx), Tx_PGA
    6. 7.6  Electrical Characteristics: Transmitter (Tx), Tx_FILTER
    7. 7.7  Electrical Characteristics: Power Amplifier (PA)
    8. 7.8  Electrical Characteristics: Receiver (Rx), Rx PGA1
    9. 7.9  Electrical Characteristics: Receiver (Rx), Rx Filter
    10. 7.10 Electrical Characteristics: Receiver (Rx), Rx PGA2
    11. 7.11 Electrical Characteristics: Digital
    12. 7.12 Electrical Characteristics: Two-Wire Interface
    13. 7.13 Electrical Characteristics: Zero-Crossing Detector
    14. 7.14 Electrical Characteristics: Internal Bias Generator
    15. 7.15 Electrical Characteristics: Power Supply
    16. 7.16 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Timing Requirements
    2. 8.2 Timing Diagrams
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 PA Block
      2. 9.3.2 Tx Block
      3. 9.3.3 Rx Block
      4. 9.3.4 DAC Block
      5. 9.3.5 REF1 and REF2 Blocks
      6. 9.3.6 Zero Crossing Detector Block
      7. 9.3.7 ETx and ERx Blocks
    4. 9.4 Power Supplies
    5. 9.5 Pin Descriptions
      1. 9.5.1 Current Overload
      2. 9.5.2 Thermal Overload
    6. 9.6 Calibration Modes
      1. 9.6.1 Tx Calibration Mode
      2. 9.6.2 Rx Calibration Mode
    7. 9.7 Serial Interface
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
    3. 10.3 Line-Coupling Circuit
    4. 10.4 Circuit Protection
    5. 10.5 Thermal Considerations
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 デバイス・サポート
      1. 11.1.1 開発サポート
        1. 11.1.1.1 TINA-TI™ (無料のダウンロード・ソフトウェア)
        2. 11.1.1.2 TI Precision Designs
        3. 11.1.1.3 WEBENCH Filter Designer
      2. 11.1.2 電力線通信開発者用キット
    2. 11.2 ドキュメントのサポート
      1. 11.2.1 関連資料
    3. 11.3 ドキュメントの更新通知を受け取る方法
    4. 11.4 コミュニティ・リソース
    5. 11.5 商標
    6. 11.6 静電気放電に関する注意事項
    7. 11.7 Glossary

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.7 Electrical Characteristics: Power Amplifier (PA)

At TJ = 25°C, PA_VS = 16 V, VAVDD = VDVDD = 3.3 V, and PA_ISET (pin 46) connected to ground, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
Input voltage range GND – 0.1 PA_VS + 0.1 V
RI Input resistance 20 kΩ
FREQUENCY RESPONSE
BW Bandwidth ILOAD = 0 670 kHz
SR Slew rate 10-V step 19 V/μs
Full-power bandwidth VOUT = 10 VPP 300 kHz
AC PSRR f = 50 kHz 14 dB
OUTPUT
VO Voltage output swing From PA_VS IO = 300 mA, sourcing 0.3 1 V
IO = 1.0 A, sourcing 1 1.5 V
From PA_Gnd IO = 300 mA, sinking 0.3 1 V
IO = 1.0 A, sinking 1 1.5 V
IO Maximum continuous current, dc PA_ISET (pin 46) connected to ground 1.0 A
Maximum peak current, ac TJ = –40°C to +125°C, f = 50 kHz 1.0 A
RO Output resistance IO = 1.0 A 0.1 Ω
PA disabled Output impedance, f = 100 kHz, REF1 enabled 145 ll 120 kΩ ll pF
Output current limit range ±0.4 to ±1.0 A
Current limit equation ILIM = 20 k × [1.2 V/(RSET + 15 kΩ)] A
Solved for RSET (current limit) RSET = [(20 k × 1.2 V/ILIM) – 15 kΩ] Ω
GAIN (RLOAD = 1 kΩ)
G Nominal gain 6.5 V/V
Gain error –1% 0.1% +1%
Gain error drift TJ = –40°C to +125°C ±1 ppm/°C
TSENSE DIODE
η Diode ideality factor 1.033
THERMAL SHUTDOWN
Junction temperature at shutdown +165 °C
Hysteresis 20 °C
Return to normal operation +145 °C