JAJSQK1 july   2023 AFE539F1-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics: ADC Input
    6. 6.6  Electrical Characteristics: General
    7. 6.7  Timing Requirements: I2C Standard Mode
    8. 6.8  Timing Requirements: I2C Fast Mode
    9. 6.9  Timing Requirements: I2C Fast Mode Plus
    10. 6.10 Timing Requirements: SPI Write Operation
    11. 6.11 Timing Requirements: SPI Read and Daisy Chain Operation (FSDO = 0)
    12. 6.12 Timing Requirements: SPI Read and Daisy Chain Operation (FSDO = 1)
    13. 6.13 Timing Requirements: PWM Output
    14. 6.14 Timing Diagrams
    15. 6.15 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Smart Analog Front End (AFE) Architecture
      2. 7.3.2 Programming Interface
      3. 7.3.3 Nonvolatile Memory (NVM)
        1. 7.3.3.1 NVM Cyclic Redundancy Check (CRC)
          1. 7.3.3.1.1 NVM-CRC-FAIL-USER Bit
          2. 7.3.3.1.2 NVM-CRC-FAIL-INT Bit
      4. 7.3.4 Power-On Reset (POR)
      5. 7.3.5 External Reset
      6. 7.3.6 Register-Map Lock
    4. 7.4 Device Functional Modes
      1. 7.4.1 Analog-to-Digital Converter (ADC) Mode
        1. 7.4.1.1 Voltage Reference Selection
          1. 7.4.1.1.1 Power-Supply as Reference
          2. 7.4.1.1.2 Internal Reference
          3. 7.4.1.1.3 External Reference
      2. 7.4.2 Pulse-Width Modulation (PWM) Mode
      3. 7.4.3 Constant Power-Dissipation Control
    5. 7.5 Programming
      1. 7.5.1 SPI Programming Mode
      2. 7.5.2 I2C Programming Mode
        1. 7.5.2.1 F/S Mode Protocol
        2. 7.5.2.2 I2C Update Sequence
          1. 7.5.2.2.1 Address Byte
          2. 7.5.2.2.2 Command Byte
        3. 7.5.2.3 I2C Read Sequence
    6. 7.6 Register Maps
      1. 7.6.1  NOP Register (address = 00h) [reset = 0000h]
      2. 7.6.2  REF-GAIN-CONFIG Register (address = 15h) [reset = 0401h]
      3. 7.6.3  COMMON-CONFIG Register (address = 1Fh) [reset = 13FFh]
      4. 7.6.4  COMMON-TRIGGER Register (address = 20h) [reset = 0000h]
      5. 7.6.5  COMMON-PWM-TRIG Register (address = 21h) [reset = 0001h]
      6. 7.6.6  GENERAL-STATUS Register (address = 22h) [reset = 00h, DEVICE-ID, VERSION-ID]
      7. 7.6.7  INTERFACE-CONFIG Register (address = 26h) [reset = 0000h]
      8. 7.6.8  STATE-MACHINE-CONFIG0 Register (address = 27h) [reset = 0003h]
      9. 7.6.9  SRAM-CONFIG Register (address = 2Bh) [reset = 0000h]
      10. 7.6.10 SRAM-DATA Register (address = 2Ch) [reset = 0000h]
      11. 7.6.11 MAX-OUTPUT Register (SRAM address = 20h) [reset = 007Fh]
      12. 7.6.12 MIN-OUTPUT Register (SRAM address = 21h) [reset = 0000h]
      13. 7.6.13 FUNCTION-COEFFICIENT Register (SRAM address = 22h) [reset = 01F4h]
      14. 7.6.14 PWM-FREQUENCY Register (SRAM address = 23h) [reset = 000Bh]
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 ドキュメントの更新通知を受け取る方法
    2. 9.2 サポート・リソース
    3. 9.3 Trademarks
    4. 9.4 静電気放電に関する注意事項
    5. 9.5 用語集
  11. 10Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.6 Electrical Characteristics: General

minimum and maximum specifications at –40°C ≤ TA ≤ +125°C and typical specifications at TA = 25°C, 1.7 V ≤ VDD ≤ 5.5 V, reference input tied to VDD, gain = 1 × and digital inputs at VDD or AGND (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INTERNAL REFERENCE
Initial accuracy TA = 25°C for all measurements 1.1979 1.212 1.224 V
Reference output temperature coefficient(1) (2) 60 ppm/°C 
EXTERNAL REFERENCE
External reference input range 1.7 VDD V
VREF input impedance(1) 192 kΩ
EEPROM
Endurance(1) –40°C ≤ TA ≤ +85°C  20000 Cycles
TA = 125°C  1000
Data retention(1) 50 Years
EEPROM programming write cycle time(1) 200 ms
Device boot-up time(1) Time taken from power valid (VDD ≥ 1.7 V) to output valid state (output state as programmed in EEPROM), 0.5-µF capacitor on the CAP pin 5 ms
DIGITAL INPUTS
Pin capacitance Per pin 10 pF
POWER
IDD Current flowing into VDD Sleep mode, internal reference powered down, external reference at 5.5 V 28 µA
Current flowing into VDD(1) Sleep mode, internal reference enabled, additional current through internal reference 10
ADC channel enabled, internal reference enabled, additional current through internal reference 12.5 µA-ch
Normal operation, state-machine enabled 900 µA
(1) Specified by design and characterization, not production tested.
(2) Measured at –40°C and +125°C and calculated the slope.