JAJSSK1 December 2023 AM62P , AM62P-Q1
ADVANCE INFORMATION
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
Read and write data valid windows will shift due to variation in process, voltage, temperature, and operating frequency. A data training method may be implemented to dynamically configure optimal read and write timing. Implementing data training enables proper operation across temperature with a specific process, voltage, and frequency operating condition, while achieving a higher operating frequency.
Data transmit and receive timing parameters are not defined for the data training use case since they are dynamically adjusted based on the operating condition.
Table 6-105 defines DLL delays required for OSPI0 with Data Training. Table 6-106, Figure 6-88, Figure 6-89, Table 6-107, Figure 6-90, and Figure 6-91 present timing requirements and switching characteristics for OSPI0 with Data Training.
MODE | OSPI_PHY_CONFIGURATION_REG BIT FIELD | DELAY VALUE |
---|---|---|
Transmit | ||
All modes | PHY_CONFIG_TX_DLL_DELAY_FLD, | (1) |
Receive | ||
All modes | PHY_CONFIG_RX_DLL_DELAY_FLD | (2) |
NO. | MODE | MIN | MAX | UNIT | ||
---|---|---|---|---|---|---|
O15 | tsu(D-LBCLK) | Setup time, OSPI0_D[7:0] valid before active OSPI0_DQS edge | DDR with DQS | (1) | ns | |
O16 | th(LBCLK-D) | Hold time, OSPI0_D[7:0] valid after active OSPI0_DQS edge | DDR with DQS | (1) | ns | |
O21 | tsu(D-LBCLK) | Setup time, OSPI0_D[7:0] valid before active OSPI0_DQS edge | SDR with External Board Loopback | (1) | ns | |
O22 | th(LBCLK-D) | Hold time, OSPI0_D[7:0] valid after active OSPI0_DQS edge | SDR with External Board Loopback | (1) | ns | |
tDVW | Data valid window (O15 + O16) | 1.8V, DDR with DQS | 1.6 | ns | ||
3.3V, DDR with DQS | 2.2 | ns | ||||
Data valid window (O21 + O22) | 1.8V, SDR with External Board Loopback | 2.3 | ns | |||
3.3V, SDR with External Board Loopback | 2.9 | ns |
NO. | PARAMETER | MODE | MIN | MAX | UNIT | |
---|---|---|---|---|---|---|
O1 | tc(CLK) | Cycle time, OSPI0_CLK | 1.8V, DDR | 6.0 | 10 | ns |
3.3V, DDR | 7.5 | 10 | ns | |||
O7 | 1.8V, SDR | 6.0 | 10 | ns | ||
3.3V, SDR | 7.5 | 10 | ns | |||
O2 | tw(CLKL) | Pulse duration, OSPI0_CLK low | DDR | ((0.475P(1)) - 0.3) | ns | |
O8 | SDR | |||||
O3 | tw(CLKH) | Pulse duration, OSPI0_CLK high | DDR | ((0.475P(1)) - 0.3) | ns | |
O9 | SDR | |||||
O4 | td(CSn-CLK) | Delay time, OSPI0_CSn[3:0] active edge to OSPI0_CLK rising edge | DDR | ((0.475P(1)) + (0.975M(2)R(4)) + (0.04TD(5)) - 1) | ((0.525P(1)) + (1.025M(2)R(4)) + (0.11TD(5)) + 1) | ns |
O10 | SDR | |||||
O5 | td(CLK-CSn) | Delay time, OSPI0_CLK rising edge to OSPI0_CSn[3:0] inactive edge | DDR | ((0.475P(1)) + (0.975N(3)R(4)) - (0.04TD(5)) - 1) | ((0.525P(1)) + (1.025N(3)R(4)) - (0.11TD(5)) + 1) | ns |
O11 | SDR | |||||
O6 | td(CLK-D) | Delay time, OSPI0_CLK active edge to OSPI0_D[7:0] transition | DDR | (6) | (6) | ns |
O12 | SDR | |||||
tDIVW | Data invalid window (O6 Max - Min) | DDR | 1.6 | ns | ||
Data invalid window (O12 Max - Min) | SDR |