4 Revision History
Changes from C Revision (September 2013) to D Revision
-
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go
Changes from B Revision (August 2012) to C Revision
-
Deleted device graphicGo
-
Added DWV (SOIC-9) package to documentGo
-
Changed last paragraph of Description sectionGo
-
Added DWV pin out drawingGo
-
Added DWV column to Thermal Information tableGo
-
Added row for DWV package to L(I01) and L(I02) parameters in Package Characteristics tableGo
Changes from A Revision (August 2011) to B Revision
-
Changed Isolation Voltage feature bulletGo
-
Added AMC1200B device to data sheetGo
-
Changed title for Figure 25Go
-
Changed CTI parameter minimum value in Electrical Characteristics from ≥ 175 to ≥ 400Go
Changes from * Revision (April 2011) to A Revision
-
Changed sign for maximum junction temperature from minus to plus (typo)Go
-
Added "0.5-V step" to test condition for Rise/fall time parameterGo
-
Changed Figure 12Go
-
Changed Figure 13Go
-
Changed surge immunity parameter from ±4000 to ±6000Go