JAJSQU7B July 2023 – June 2024 AWRL1432
PRODUCTION DATA
1.2V RF LDO, 1.2V SRAM LDO and 1.0V RF LDO require two decoupling capacitors with typical values of 10uF and 2.2uF.
The parasitic offered by different portion of the output path is illustrated in Figure 7-5. As shown in figure, the output path can be divided into four portions:
Ball to first capacitor: “RT1” and “LT1” are the parasitic resistance and inductance offered by the ball to the first capacitor lead.
Along the first capacitor: “ESL1” and “ESR1” are the effective series inductance and resistance of the first decoupling capacitor. “RT2” and “LT2” are the ground trace resistance and inductance respectively of the first capacitor ground trace.
First capacitor lead to second capacitor lead: “RTC2C” and “LTC2C” are the resistance and inductance of the trace between two capacitors.
Along the second capacitor: “ESL2” and “ESR2” are the effective series inductance and resistance of the second decoupling capacitor. “RT3” and “LT3” are the ground trace resistance and inductance respectively of the second capacitor ground trace.