SLUSBY5G June   2014  – December 2015

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1  High Impedance Mode
      2. 7.4.2  Battery Only Connected
      3. 7.4.3  Input Connected
        1. 7.4.3.1 Input Voltage Protection in Charge Mode
          1. 7.4.3.1.1 Sleep Mode
          2. 7.4.3.1.2 Input Voltage Based Dynamic Power Management (VIN-DPM)
          3. 7.4.3.1.3 Input Overvoltage Protection
        2. 7.4.3.2 Charge Profile
      4. 7.4.4  Battery Charging Process
      5. 7.4.5  Charge Time Optimizer
      6. 7.4.6  Battery Detection
      7. 7.4.7  Battery Overvoltage Protection (BOVP)
      8. 7.4.8  Dynamic Power Path Management
      9. 7.4.9  Battery Discharge FET (BGATE)
      10. 7.4.10 IUSB1, IUSB2, and IUSB3 Input
      11. 7.4.11 Safety Timer in Charge Mode
      12. 7.4.12 LDO Output (DRV)
      13. 7.4.13 External NTC Monitoring (TS)
      14. 7.4.14 Thermal Regulation and Protection
      15. 7.4.15 Status Outputs (CHG, PG)
      16. 7.4.16 Boost Mode Operation
        1. 7.4.16.1 PWM Controller in Boost Mode
        2. 7.4.16.2 Burst Mode during Light Load
        3. 7.4.16.3 CHG and PG During Boost Mode
        4. 7.4.16.4 Protection in Boost Mode
          1. 7.4.16.4.1 Output Over-Voltage Protection
          2. 7.4.16.4.2 Output Over-Current Protection
          3. 7.4.16.4.3 Battery Voltage Protection
  8. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Typical Application, External Discharge FET
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Output Inductor and Capacitor Selection Guidelines
      2. 8.2.2 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Requirements for SYS Output
    2. 9.2 Requirements for Charging
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Related Links
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

11 Device and Documentation Support

11.1 Documentation Support

11.1.1 Related Documentation

User's Guide for QFN Packaged bq24265, bq24266, and bq24267 3-A Battery Charger Evaluation Module, SLUUB40

11.2 Related Links

The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy.

11.3 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.4 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.5 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.