SLUSA78C July 2010 – July 2015
PRODUCTION DATA.
The switching node rise and fall times should be minimized for minimum switching loss. Proper layout of the components to minimize high frequency current path loop (see Figure 21) is important to prevent electrical and magnetic field radiation and high-frequency resonant problems. The following is a PCB layout priority list for proper layout. Layout PCB according to this specific order is essential.
See the EVM design for the recommended component placement with trace and via locations. For the QFN information, see SCBA017 and SLUA271.
The IC has a unique short circuit protection feature. Its cycle-by-cycle current monitoring feature is achieved through monitoring the voltage drop across Rdson of the MOSFETs after a certain amount of blanking time. In case of MOSFET short or inductor short circuit, the overcurrent condition is sensed by two comparators and two counters will be triggered. After seven times of short circuit events, the charger will be latched off. The way to reset the charger from latch-off status is reconnect adapter. Figure 20 shows the IC short-circuit protection block diagram.
In normal operation, low-side MOSFET current is from source-to-drain, which generates negative voltage drop when it turns on As a result, the overcurrent comparator cannot be triggered. When high-side switch short-circuit or inductor short-circuit happens, the large current of low-side MOSFET is from drain-to-source and can trigger low-side switch overcurrent comparator. IC senses low-side switch voltage drop by PHASE pin and GND pin.
The high-side FET short is detected by monitoring the voltage drop between ACP and PHASE. As a result, it not only monitors the high-side switch voltage drop, but also the adapter sensing resistor voltage drop and PCB trace voltage drop from ACN terminal of RAC to charger high-side switch drain. Usually, there is a long trace between input sensing resistor and charger converting input, a careful layout will minimize the trace effect.
The total voltage drop sensed by IC can be expressed as Equation 15.
where
Here, the PCB factor k equals 0 means the best layout shown in Figure 24, where the PCB trace only goes through charger input current, while k equals 1 means the worst layout shown in Figure 23, where the PCB trace goes through all the DPM current. The total voltage drop must below the high-side short circuit protection threshold to prevent unintentional charger shutdown in normal operation.
The low-side MOSFET short-circuit voltage drop threshold is fixed to typical 110 mV. The high-side MOSFET short-circuit voltage drop threshold can be adjusted through SMBus command. ChargeOption() bit[8:7] = 00, 01, 10, 11 set the threshold 300 mV, 500 mV, 700 mV, and 900 mV, respectively. For a fixed PCB layout, host should set proper short-circuit protection threshold level to prevent unintentional charger shutdown in normal operation.
To prevent unintentional charger shutdown in normal operation, MOSFET RDS(on) selection and PCB layout is very important. Figure 23 shows a PCB layout example that needs improvement and its equivalent circuit. In this layout, system current path and charger input current path are not separated; as a result, the system current causes voltage drop in the PCB copper and is sensed by the IC. The worst layout is when a system current pull-point is after charger input; as a result, all system current voltage drops are counted into overcurrent protection comparator. The worst case for IC is the total system current and charger input current sum equals DPM current. When the system pulls more current, the charger IC tries to regulate RAC current as a constant current by reducing charging current.
Figure 24 shows the optimized PCB layout example. The system current path and charge input current path is separated; as a result, the IC only senses charger input current caused PCB voltage drop and minimized the possibility of unintentional charger shutdown in normal operation. This also makes PCB layout easier for high system current application.