SLUSCD6 April   2016

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Overvoltage Protection
      2. 8.3.2 Undervoltage Lockout (UVLO)
      3. 8.3.3 External NTC Monitoring (TS)
      4. 8.3.4 50-mA LDO (LDO)
      5. 8.3.5 Charge Status Indicator (CHG)
      6. 8.3.6 Input Current Limit Control (EN)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Charging Operation
        1. 8.4.1.1 Charger Operation with Minimum System Voltage Mode Enabled
        2. 8.4.1.2 Precharge Mode (V(BAT) ≤ V(LOWV))
        3. 8.4.1.3 Fast Charge Mode
      2. 8.4.2 Programmable Input Current Limit (ISET)
      3. 8.4.3 Sleep Mode
      4. 8.4.4 Thermal Regulation and Thermal Shutdown
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Selection of Input and Output Capacitors
        2. 9.2.2.2 Thermal Considerations
      3. 9.2.3 Application Curves
    3. 9.3 System Examples
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Community Resources
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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発注情報

7 Specifications

7.1 Absolute Maximum Ratings (1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Input Voltage IN (with respect to GND) –0.3 30 V
EN, TS (with respect to GND) –0.3 7 V
Output Voltage BAT, OUT, LDO, CHG, ISET (with respect to GND) –0.3 7 V
Input Current (Continuous) IN 1.2 A
Output Current (Continuous) BAT 1.2 A
Output Current (Continuous) LDO 100 mA
Output Sink Current CHG 5 mA
Junction temperature, TJ –40 150 °C
Storage temperature, TSTG –65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to the network ground pin unless otherwise noted.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per aec q100-002(1) ±3000 V
Charged-device model (CDM), per AEC Q100-011 ±1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

MIN MAX UNITS
VIN IN operating voltage 3.75 (1) 8 V
IIN Input current, IN 1 A
IOUT Output Current in charge mode, OUT 1 A
TJ Junction Temperature -40 125 °C
(1) Charge current may be limited at low input voltages due to the dropout of the device.

7.4 Thermal Information

THERMAL METRIC (1) bq25071-Q1 UNIT
DQC (WSON)
10 PINS
RθJA Junction-to-ambient thermal resistance 61.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 65.5
RθJB Junction-to-board thermal resistance 22.8
ψJT Junction-to-top characterization parameter 1.5
ψJB Junction-to-board characterization parameter 22.7
RθJC(bot) Junction-to-case (bottom) thermal resistance 5.5
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

Over junction temperature range–40°C ≤ TJ ≤ 125°C and recommended supply voltage (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
INPUT
V(UVLO) Under-voltage lock-out VIN: 0 V → 4 V 3.15 3.30 3.55 V
VHYS(UVLO) Hysteresis on V(UVLO) VIN: 4 V → 0 V 300 mV
VIN(SLP) Valid input source threshold VIN(SLP) above VBAT Input power good if VIN > VBAT + VIN(SLP)
V(BAT) = 3.6 V, VIN: 3.5 V → 4 V		 30 75 150 mV
Input power good if VIN > VBAT + VIN(SLP)
V(BAT) = 3.6 V, VIN: 4 V → 3.5 V		 24 55 95 mV
VHYS(INSLP) Hysteresis on VIN(SLP) V(BAT) = 3.6 V, VIN: 4 V → 3.5 V 32 mV
VOVP Input over-voltage protection threshold VIN: 5 V → 11 V 10.2 10.5 10.8 V
VHYS(OVP) Hysteresis on OVP VIN: 11 V → 5 V 100 mV
QUIESCENT CURRENT
IBAT(PDWN) Battery current into BAT, No input connected VIN = 0 V (1), V(CHG) = Low 6 μA
IIN(STDBY) Standby current into IN pin EN = HI, VIN = 5.5V 0.25 mA
EN = HI, VIN ≤ V(OVP) 0.5
EN = HI, VIN > V(OVP) 2
BATTERY CHARGER FAST-CHARGE
VBAT(REG) Battery charge regulation voltage TA = -40°C to 125°C, IOUT = 50 mA,
VIN = 5 V		 3.455 3.5 3.545 V
TA = 25°C, VIN = 5 V, IOUT = 50 mA 3.455 3.5 3.539
VBAT(OVCH) Battery overcharge voltage threshold 3.55 3.7 3.81 V
IIN(RANGE) User programmable input current limit range R(ISET) = 1 kΩ to 1 0kΩ, EN = VSS 100 1000 mA
IIN(LIM) Input current limit, or fast-charge current EN = FLOAT 435 467 500 mA
EN = VSS KISET/RISET
KISET Fast charge current factor TA ≤ 85°C R(ISET) = 1 kΩ to 10 kΩ, EN = VSS , 4.35 V < VIN ≤ 8 V 860 1000 1130 AΩ
R(ISET) = 1 kΩ to 10 kΩ, EN = VSS , 3.75 V < VIN ≤ 4.35 V 815 1000 1185 AΩ
VDO(IN-OUT) VIN – VOUT VIN = 4.2 V, IOUT = 0.75 A 500 900 mV
ISET SHORT CIRCUIT PROTECTION
RISET(MAX) Highest resistor value considered a short fault R(ISET): 900 Ω → 300 Ω, IOUT latches off, Cycle power to reset, Fault range > 1.10 A 720 Ω
IOUT(CL) Maximum OUT current limit regulation (Clamp) 1 2 A
PRE-CHARGE AND CHARGE DONE
V(LOWV) Pre-charge to fast-charge transition threshold 0.5 0.7 0.9 V
I(PRECHARGE) Precharge current to BAT during precharge mode V(BAT) = 0 V to 0.7 V 41.5 45 49.5 mA
RECHARGE OR REFRESH
V(RCH) Recharge detection threshold hysteresis V(BAT) falling 150 200 350 mV
LDO
V(LDO) LDO Output Voltage VIN = 5 V to 8 V,
I(LDO) = 0 mA to 50 mA		 4.7 4.9 5.1 V
I(LDO) Maximum LDO Output Current 60 mA
V(DO) Dropout Voltage VIN = 4.5V, I(LDO) = 50 mA 200 350 mV
LOGIC LEVELS ON EN
VIL Logic low input voltage 0.4 V
VIH Logic high input voltage 1.4 V
V(FLT) Logic FLOAT input voltage 600 850 1100 mV
I(FLTlkg) Maximum leakage sink or source current to keep in FLOAT 1 µA
IEN(DRIVE) Minimal drive current from an external device for Low or High 8 µA
BATTERY-PACK NTC MONITOR (TS)
V(COLD) TS Cold Threshold V(TS) Rising 23.6 25 25.8 %VLDO
V(CUTOFF) TS Cold Cutoff Threshold V(TS) Falling 1 %VLDO
V(HOT) TS Hot Threshold V(TS) Falling 12 12.5 13.2 %VLDO
VHOT(HYS) TS Hot Cutoff Threshold V(TS) Rising 1 %VLDO
CHG OUTPUT
VOL Output LOW voltage I(SINK) = 1 mA 0.45 V
IIH Leakage current CHG = 5 V 1 μA
THERMAL REGULATION
TJ(REG) Temperature Regulation Limit TJ rising 125 °C
TJ(OFF) Thermal shutdown temperature TJ rising 155 °C
TJ(OFF-HYS) Thermal shutdown hysteresis TJ falling 20 °C
(1) Force V(CHG)

7.6 Timing Requirements

MIN TYP MAX UNIT
INPUT
tBLK(OVP) Input overvoltage blanking time 100 μs
tREC(OVP) Input overvoltage recovery time Time measured from VIN: 11 V → 5 V
1 μs fall-time to LDO = HI,
V(BAT) = 3.5 V		 100 μs
tDGL(NO-IN) Delay time, input power loss to charger turn-off Time measured from VIN: 5 V → 2.5 V 1 μs fall-time 32 ms
ISET SHORT CIRCUIT PROTECTION
tDGL(SHORT) Deglitch time transition from I(SET) short to IOUT disable Clear fault by cycling V(BUS) or EN 1.5 ms
PRE-CHARGE AND CHARGE DONE
tDGL1(LOWV) Deglitch time on pre-charge to fast-charge transition 25 ms
tDGL2(LOWV) Deglitch time on fast-charge to pre-charge transition 25 ms
RECHARGE OR REFRESH
tDGL(RCH) Deglitch time, recharge threshold detected V(BAT) falling to New Charge Cycle 25 ms
BATTERY-PACK NTC MONITOR (TS)
tdgl(TS) Deglitch for TS Fault Fault detected on TS to stop charge 25 ms

7.7 Typical Characteristics

VIN = 5 V, VBAT = 3.2 V, I (CHG) = 280 mA, Typical Application Circuit
bq25071-Q1 G012_slusbk6.gif
Figure 1. Voltage and Current vs Elapsed Time
bq25071-Q1 G008_LUSA66.png
Figure 3. Battery Regulation Voltage vs Charge Current
bq25071-Q1 D102_SLUSCD6.gif
Figure 5. Charge Current vs Input Voltage
bq25071-Q1 G007_sluscd6.gif
VIN = 4.5 V IOUT = 1 A
TA = –40°C to 125°C
Figure 2. Dropout Voltage vs Temperature
bq25071-Q1 D001_SLUSCD6.gif
TA = –40°C to 125°C
Figure 4. OVP Threshold vs Temperature
bq25071-Q1 G011_slusbk6.gif
VIN = 5 V
Figure 6. Input Current Limit vs Battery Voltage

7.8 Typical Characteristics

VBAT = 3.2 V, I (CHG) = 318 mA, Typical Application Circuit
bq25071-Q1 D100_SLUSCD6.gif
Figure 7. Charge Current Accuracy vs Input Voltage
bq25071-Q1 D101_SLUSCD6.gif
Figure 8. Input Voltage vs Battery Charge Regulation Voltage