JAJSIG0A January 2020 – February 2022 BQ25616
PRODUCTION DATA
PIN | TYPE(1) | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
ACDRV | 2 | AO | Charge pump output to drive external N-channel MOSFET (ACFET). It provides 6V voltage above VBUS as gate drive to turn on ACFET when VAC voltage is below ACOV threshold (14.2-V) and above UVLO. Leave ACDRV floating if external OVP is not being used. |
BAT | 13 | P | Battery connection point to the positive terminal of the battery pack. The internal current sensing resistor is connected between SYS and BAT. Connect a 10 µF(2) closely to the BAT pin. |
14 | |||
BTST | 21 | P | PWM high side driver positive supply. Internally, the BTST is connected to the cathode of the boot-strap diode. Connect the 0.047-μF bootstrap capacitor(2) from SW to BTST. |
CE | 9 | DI | Charge enable pin. When this pin is driven LOW, battery charging is enabled. |
D+ | 3 | AIO | Positive line of the USB data line pair. D+/D– based USB host/charging port detection. The detection includes data contact detection (DCD), primary and secondary detection in BC1.2 and nonstandard adaptors |
D– | 4 | AIO | Negative line of the USB data line pair. D+/D– based USB host/charging port detection. The detection includes data contact detection (DCD), primary and secondary detection in BC1.2 and nonstandard adaptors |
GND | 17 | P | Power ground and signal ground |
18 | |||
ICHG | 10 | AI | ICHG pin sets the charge current limit. A resistor is connected from ICHG pin to ground to set charge current limit as ICHG = KICHG/RICHG. The acceptable range for charge current is 300 mA – 3000 mA. |
ILIM | 8 | AI | ILIM sets the input current limit when the input adapter is detected as unknown. Otherwise, the input current limit is set by D+/D– detection outcome. A resistor is connected from ILIM pin to ground to set the input current limit as IINDPM = KILIM/RILIM. The acceptable range for ILIM current is 500 mA - 3200 mA. |
OTG | 6 | DI | Boost mode enable pin. When this pin is pulled HIGH, boost mode is enabled. OTG pin cannot be floating. |
PG | 7 | DO | Open drain active low power good indicator. Connect to the pull up rail through 10 kΩ resistor. LOW indicates a good input if the input voltage is between UVLO and ACOV, above SLEEP mode threshold, and input current limit is above 30 mA. |
PMID | 23 | P | Connected to the drain of the reverse blocking MOSFET (RBFET) and the drain of HSFET. Place a 10-µF capacitor(2) on PMID to GND. |
REGN | 22 | P | PWM low side driver positive supply output. Internally, REGN is connected to the anode of the boot-strap diode. Connect a 4.7-μF (10-V rating) ceramic capacitor(2) from REGN to analog GND. The capacitor should be placed close to the IC. |
STAT | 5 | DO | Open-drain
interrupt output. Connect the STAT pin to a logic rail via 10-kΩ
resistor. The STAT pin indicates charger status. Charge in progress: LOW Charge complete or charger in SLEEP mode: HIGH Charge suspend (fault response): Blink at 1Hz |
SW | 19 | P | Switching node connecting to output inductor. Internally SW is connected to the source of the n-channel HSFET and the drain of the n-channel LSFET. Connect the 0.047-μF bootstrap capacitor from SW to BTST. |
20 | |||
SYS | 15 | P | System output connection point. The internal current sensing resistor is connected between SYS and BAT. Connect a 10 µF (min) capacitor(2) close to the SYS pin. |
16 | |||
TS | 11 | AI | Battery temperature qualification voltage input. Connect a negative temperature coefficient thermistor (NTC). Program temperature window with a resistor divider from REGN to TS to GND. Charge and boost mode suspend when TS pin voltage is out of range. When TS pin is not used, connect a 10-kΩ resistor from REGN to TS and a 10-kΩ resistor from TS to GND. It is recommended to use a 103AT-2 thermistor. BQ25616 supports hot/cold profile and BQ25616J supports JEITA profile. |
VAC | 1 | P | Charger input voltage sensing. Optional external n-channel ACFET is placed between VAC and VBUS. When VAC voltage is below ACOV threshold (14.2-V) and above UVLO, ACFET turns on to connect VAC to VBUS, and power up the charger IC. Connect VAC and VBUS if ACFET is not to be used. |
VBUS | 24 | P | Charger input voltage. The internal n-channel reverse block MOSFET (RBFET) is connected between VBUS and PMID with VBUS on source. Place a 1-uF ceramic capacitor(2) from VBUS to GND and place it as close as possible to the device. |
VSET | 12 | AI | VSET pin sets
default battery charge voltage . Program battery regulation voltage with a
resistor pull-down from VSET to GND. RVSET > 50kΩ (float pin) = 4.208 V RVSET < 500Ω (short to GND) = 4.352 V 5kΩ < RVSET < 25kΩ = 4.100 V |
Thermal Pad | — | P | Ground reference for the device that is also the thermal pad used to conduct heat from the device. This connection serves two purposes. The first purpose is to provide an electrical ground connection for the device. The second purpose is to provide a low thermal-impedance path from the device die to the PCB. This pad should be tied externally to a ground plane. |