JAJSD77A May   2017  – May 2018

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      アプリケーション図
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power-Up from Battery Without DC Source
      2. 8.3.2 Power-Up From DC Source
        1. 8.3.2.1 CHRG_OK Indicator
        2. 8.3.2.2 Input Voltage and Current Limit Setup
        3. 8.3.2.3 Battery Cell Configuration
        4. 8.3.2.4 Device Hi-Z State
      3. 8.3.3 USB On-The-Go (OTG)
      4. 8.3.4 Converter Operation
        1. 8.3.4.1 Inductor Setting through IADPT Pin
        2. 8.3.4.2 Continuous Conduction Mode (CCM)
        3. 8.3.4.3 Pulse Frequency Modulation (PFM)
      5. 8.3.5 Current and Power Monitor
        1. 8.3.5.1 High-Accuracy Current Sense Amplifier (IADPT and IBAT)
        2. 8.3.5.2 High-Accuracy Power Sense Amplifier (PSYS)
      6. 8.3.6 Input Source Dynamic Power Manage
      7. 8.3.7 Two-Level Adapter Current Limit (Peak Power Mode)
      8. 8.3.8 Processor Hot Indication
        1. 8.3.8.1 PROCHOT During Low Power Mode
        2. 8.3.8.2 PROCHOT Status
      9. 8.3.9 Device Protection
        1. 8.3.9.1 Watchdog Timer
        2. 8.3.9.2 Input Overvoltage Protection (ACOV)
        3. 8.3.9.3 Input Overcurrent Protection (ACOC)
        4. 8.3.9.4 System Overvoltage Protection (SYSOVP)
        5. 8.3.9.5 Battery Overvoltage Protection (BATOVP)
        6. 8.3.9.6 Battery Short
        7. 8.3.9.7 Thermal Shutdown (TSHUT)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Forward Mode
        1. 8.4.1.1 System Voltage Regulation with Narrow VDC Architecture
        2. 8.4.1.2 Battery Charging
      2. 8.4.2 USB On-The-Go
    5. 8.5 Programming
      1. 8.5.1 SMBus Interface
        1. 8.5.1.1 SMBus Write-Word and Read-Word Protocols
        2. 8.5.1.2 Timing Diagrams
    6. 8.6 Register Map
      1. 8.6.1  Setting Charge and PROCHOT Options
        1. 8.6.1.1 ChargeOption0 Register (SMBus address = 12h) [reset = E20Eh]
          1. Table 7. ChargeOption0 Register (SMBus address = 12h) Field Descriptions
          2. Table 8. ChargeOption0 Register (SMBus address = 12h) Field Descriptions
        2. 8.6.1.2 ChargeOption1 Register (SMBus address = 30h) [reset = 211h]
          1. Table 9.  ChargeOption1 Register (SMBus address = 30h) Field Descriptions
          2. Table 10. ChargeOption1 Register (SMBus address = 30h) Field Descriptions
        3. 8.6.1.3 ChargeOption2 Register (SMBus address = 31h) [reset = 2B7]
          1. Table 11. ChargeOption2 Register (SMBus address = 31h) Field Descriptions
          2. Table 12. ChargeOption2 Register (SMBus address = 31h) Field Descriptions
        4. 8.6.1.4 ChargeOption3 Register (SMBus address = 32h) [reset = 0h]
          1. Table 13. ChargeOption3 Register (SMBus address = 32h) Field Descriptions
          2. Table 14. ChargeOption3 Register (SMBus address = 32h) Field Descriptions
        5. 8.6.1.5 ProchotOption0 Register (SMBus address = 33h) [reset = 04A54h]
          1. Table 15. ProchotOption0 Register (SMBus address = 33h) Field Descriptions
          2. Table 16. ProchotOption0 Register (SMBus address = 33h) Field Descriptions
        6. 8.6.1.6 ProchotOption1 Register (SMBus address = 34h) [reset = 8120h]
          1. Table 17. ProchotOption1 Register (SMBus address = 34h) Field Descriptions
          2. Table 18. ProchotOption1 Register (SMBus address = 34h) Field Descriptions
        7. 8.6.1.7 ADCOption Register (SMBus address = 35h) [reset = 2000h]
          1. Table 19. ADCOption Register (SMBus address = 35h) Field Descriptions
          2. Table 20. ADCOption Register (SMBus address = 35h) Field Descriptions
      2. 8.6.2  Charge and PROCHOT Status
        1. 8.6.2.1 ChargerStatus Register (SMBus address = 20h) [reset = 0000h]
          1. Table 21. ChargerStatus Register (SMBus address = 20h) Field Descriptions
          2. Table 22. ChargerStatus Register (SMBus address = 20h) Field Descriptions
        2. 8.6.2.2 ProchotStatus Register (SMBus address = 21h) [reset = 0h]
          1. Table 23. ProchotStatus Register (SMBus address = 21h) Field Descriptions
          2. Table 24. ProchotStatus Register (SMBus address = 21h) Field Descriptions
      3. 8.6.3  ChargeCurrent Register (SMBus address = 14h) [reset = 0h]
        1. Table 25. Charge Current Register (14h) With 10-mΩ Sense Resistor (SMBus address = 14h) Field Descriptions
        2. Table 26. Charge Current Register (14h) With 10-mΩ Sense Resistor (SMBus address = 14h) Field Descriptions
        3. 8.6.3.1   Battery Pre-Charge Current Clamp
      4. 8.6.4  MaxChargeVoltage Register (SMBus address = 15h) [reset value based on CELL_BATPRESZ pin setting]
        1. Table 27. MaxChargeVoltage Register (SMBus address = 15h) Field Descriptions
        2. Table 28. MaxChargeVoltage Register (SMBus address = 15h) Field Descriptions
      5. 8.6.5  MinSystemVoltage Register (SMBus address = 3Eh) [reset value based on CELL_BATPRESZ pin setting]
        1. Table 29. MinSystemVoltage Register (SMBus address = 3Eh) Field Descriptions
        2. Table 30. MinSystemVoltage Register (SMBus address = 3Eh) Field Descriptions
        3. 8.6.5.1   System Voltage Regulation
      6. 8.6.6  Input Current and Input Voltage Registers for Dynamic Power Management
        1. 8.6.6.1 Input Current Registers
          1. 8.6.6.1.1 IIN_HOST Register With 10-mΩ Sense Resistor (SMBus address = 3Fh) [reset = 4000h]
            1. Table 31. IIN_HOST Register With 10-mΩ Sense Resistor (SMBus address = 3Fh) Field Descriptions
            2. Table 32. IIN_HOST Register With 10-mΩ Sense Resistor (SMBus address = 3Fh) Field Descriptions
          2. 8.6.6.1.2 IIN_DPM Register With 10-mΩ Sense Resistor (SMBus address = 022h) [reset = 0h]
            1. Table 33. IIN_DPM Register With 10-mΩ Sense Resistor (SMBus address = 022h) Field Descriptions
            2. Table 34. IIN_DPM Register With 10-mΩ Sense Resistor (SMBus address = 022h) Field Descriptions
          3. 8.6.6.1.3 InputVoltage Register (SMBus address = 3Dh) [reset = VBUS-1.28V]
            1. Table 35. InputVoltage Register (SMBus address = 3Dh) Field Descriptions
            2. Table 36. InputVoltage Register (SMBus address = 3Dh) Field Descriptions
      7. 8.6.7  OTGVoltage Register (SMBus address = 3Bh) [reset = 0h]
        1. Table 37. OTGVoltage Register (SMBus address = 3Bh) Field Descriptions
        2. Table 38. OTGVoltage Register (SMBus address = 3Bh) Field Descriptions
      8. 8.6.8  OTGCurrent Register (SMBus address = 3Ch) [reset = 0h]
        1. Table 39. OTGCurrent Register (SMBus address = 3Ch) Field Descriptions
        2. Table 40. OTGCurrent Register (SMBus address = 3Ch) Field Descriptions
      9. 8.6.9  ADCVBUS/PSYS Register (SMBus address = 23h)
        1. Table 41. ADCVBUS/PSYS Register Field Descriptions
      10. 8.6.10 ADCIBAT Register (SMBus address = 24h)
        1. Table 42. ADCIBAT Register Field Descriptions
      11. 8.6.11 ADCIINCMPIN Register (SMBus address = 25h)
        1. Table 43. ADCIINCMPIN Register Field Descriptions
      12. 8.6.12 ADCVSYSVBAT Register (SMBus address = 26h)
        1. Table 44. ADCVSYSVBAT Register Field Descriptions
      13. 8.6.13 ID Registers
        1. 8.6.13.1 ManufactureID Register (SMBus address = FEh) [reset = 0040h]
          1. Table 45. ManufactureID Register Field Descriptions
        2. 8.6.13.2 Device ID (DeviceAddress) Register (SMBus address = FFh) [reset = 0h]
          1. Table 46. Device ID (DeviceAddress) Register Field Descriptions
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 ACP-ACN Input Filter
        2. 9.2.2.2 Inductor Selection
        3. 9.2.2.3 Input Capacitor
        4. 9.2.2.4 Output Capacitor
        5. 9.2.2.5 Power MOSFETs Selection
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
      1. 11.2.1 Layout Consideration of Current Path
      2. 11.2.2 Layout Consideration of Short Circuit Protection
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 12.2 ドキュメントのサポート
      1. 12.2.1 関連資料
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 コミュニティ・リソース
    5. 12.5 商標
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

9.2.2.5 Power MOSFETs Selection

Four external N-channel MOSFETs are used for a synchronous switching battery charger. The gate drivers are internally integrated into the IC with 6 V of gate drive voltage. 30 V or higher voltage rating MOSFETs are preferred for 19 V - 20 V input voltage.

Figure-of-merit (FOM) is usually used for selecting proper MOSFET based on a tradeoff between the conduction loss and switching loss. For the top side MOSFET, FOM is defined as the product of a MOSFET's on-resistance, RDS(ON), and the gate-to-drain charge, QGD. For the bottom side MOSFET, FOM is defined as the product of the MOSFET's on-resistance, RDS(ON), and the total gate charge, QG.

Equation 6. FOMtop = RDS(on) x QGD; FOMbottom = RDS(on) x QG

The lower the FOM value, the lower the total power loss. Usually lower RDS(ON) has higher cost with the same package size.

The top-side MOSFET loss includes conduction loss and switching loss. It is a function of duty cycle (D=VOUT/VIN), charging current (ICHG), MOSFET's on-resistance (RDS(ON)), input voltage (VIN), switching frequency (fS), turn on time (ton) and turn off time (toff):

Equation 7. bq25700A eq9_lusa79.gif

The first item represents the conduction loss. Usually MOSFET RDS(ON) increases by 50% with 100°C junction temperature rise. The second term represents the switching loss. The MOSFET turn-on and turn-off times are given by:

Equation 8. bq25700A eq10_lusa79.gif

where Qsw is the switching charge, Ion is the turn-on gate driving current and Ioff is the turn-off gate driving current. If the switching charge is not given in MOSFET datasheet, it can be estimated by gate-to-drain charge (QGD) and gate-to-source charge (QGS):

Equation 9. bq25700A eq11_lusa79.gif

Gate driving current can be estimated by REGN voltage (VREGN), MOSFET plateau voltage (Vplt), total turn-on gate resistance (Ron) and turn-off gate resistance (Roff) of the gate driver:

Equation 10. bq25700A eq12_lusa79.gif

The conduction loss of the bottom-side MOSFET is calculated with the following equation when it operates in synchronous continuous conduction mode:

Equation 11. Pbottom = (1 - D) x ICHG2 x RDS(on)

When charger operates in non-synchronous mode, the bottom-side MOSFET is off. As a result all the freewheeling current goes through the body-diode of the bottom-side MOSFET. The body diode power loss depends on its forward voltage drop (VF), non-synchronous mode charging current (INONSYNC), and duty cycle (D).

Equation 12. PD = VF x INONSYNC x (1 - D)

The maximum charging current in non-synchronous mode can be up to 0.25 A for a 10-mΩ charging current sensing resistor or 0.5 A if battery voltage is below 2.5 V. The minimum duty cycle happens at lowest battery voltage. Choose the bottom-side MOSFET with either an internal Schottky or body diode capable of carrying the maximum non-synchronous mode charging current.