JAJSFQ9C june 2018 – may 2023 BQ25713 , BQ25713B
PRODUCTION DATA
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
ACN | 2 | PWR | Input current sense resistor negative input. The leakage on ACP and ACN are matched. A R-C low-pass filter is required to be placed between the sense resistor and the ACN pin to suppress the high frequency noise in the input current signal. Refer to Section 10 for ACP/ACN filter design. |
ACP | 3 | PWR | Input current sense resistor positive input. The leakage on ACP and ACN are matched. A R-C low-pass filter is required to be placed between the sense resistor and the ACP pin to suppress the high frequency noise in the input current signal. Refer to Section 10 for ACP/ACN filter design. |
BATDRV | 21 | O | P-channel battery FET (BATFET) gate driver output. It is shorted to VSYS to turn off the BATFET. It goes 10 V below VSYS to fully turn on BATFET. BATFET is in linear mode to regulate VSYS at minimum system voltage when battery is depleted. BATFET is fully on during fast charge and works as an ideal-diode in supplement mode. |
BTST1 | 30 | PWR | Buck mode high side power MOSFET driver power supply. Connect a 0.047-µF capacitor between SW1 and BTST1. The bootstrap diode between REGN and BTST1 is integrated. |
BTST2 | 25 | PWR | Boost mode high side power MOSFET driver power supply. Connect a 0.047-μF capacitor between SW2 and BTST2. The bootstrap diode between REGN and BTST2 is integrated. |
CELL_BATPRESZ | 18 | I | Battery cell selection pin for 1–4 cell battery setting. CELL_BATPRESZ pin is biased from VDDA. CELL_BATPRESZ pin also sets SYSOVP thresholds to 5 V for 1-cell, 12 V for 2-cell, and 19.5 V for 3-cell/4-cell. CELL_BATPRESZ pin is pulled below VCELL_BATPRESZ_FALL to indicate battery removal. The device exits LEARN mode, and disables charge. The charge voltage register REG0x05/04() goes back to default. |
CHRG_OK | 4 | O | Open drain active high indicator to inform the system good power source is connected to the charger input. Connect to the pullup rail via 10-kΩ resistor. When VBUS rises above 3.5V or falls below 24.5V, CHRG_OK is HIGH after 50ms deglitch time. When VBUS falls below 3.2 V or rises above 26 V, CHRG_OK is LOW. When any fault occurs, CHRG_OK is asserted LOW. |
CMPIN | 14 | I | Input of independent comparator. The independent comparator compares the voltage sensed on CMPIN pin with internal reference, and its output is on CMPOUT pin. Internal reference, output polarity and deglitch time is selectable by the I2C host. With polarity HIGH (REG0x30[6] = 1), place a resistor between CMPIN and CMPOUT to program hysteresis. With polarity LOW (REG0x30[6] = 0), the internal hysteresis is 100 mV. If the independent comparator is not in use, tie CMPIN to ground. |
CMPOUT | 15 | O | Open-drain output of independent comparator. Place pullup resistor from CMPOUT to pullup supply rail. Internal reference, output polarity and deglitch time are selectable by the I2C host. |
COMP2 | 17 | I | Buck boost converter compensation pin 2. Refer to BQ2571X EVM schematic for COMP2 pin RC network. |
COMP1 | 16 | I | Buck boost converter compensation pin 1. Refer to BQ2571X EVM schematic for COMP1 pin RC network. |
OTG/VAP | 5 | I | Active HIGH to enable OTG or VAP modes. When REG0x34[5]=1, pulling high OTG/VAP pin and setting REG0x35[4]=1 can enable OTG mode. When REG0x34[5]=0, pulling high OTG/VAP pin is to enable VAP mode. |
HIDRV1 | 31 | O | Buck mode high side power MOSFET (Q1) driver. Connect to high side n-channel MOSFET gate. |
HIDRV2 | 24 | O | Boost mode high side power MOSFET(Q4) driver. Connect to high side n-channel MOSFET gate. |
IADPT | 8 | O | The adapter current monitoring output pin. V(IADPT) = 20 or 40 × (V(ACP) – V(ACN)) with ratio selectable in REG0x00[4]. Place a resistor from the IADPT pin to ground corresponding to the inductance in use. For a 2.2 µH inductance, the resistor is 137 kΩ. Place a 100-pF or less ceramic decoupling capacitor from IADPT pin to ground. IADPT output voltage is clamped below 3.3 V. |
IBAT | 9 | O | The battery current monitoring output pin. V(IBAT) = 8 or 16 × (V(SRP) – V(SRN)) for charge current, or V(IBAT) = 8 or 16 × (V(SRN) – V(SRP)) for discharge current, with ratio selectable in REG0x00[3]. Place a 100-pF or less ceramic decoupling capacitor from IBAT pin to ground. This pin can be floating if not in use. Its output voltage is clamped below 3.3 V. |
ILIM_HIZ | 6 | I | Input current limit setting pin. Program ILIM_HIZ voltage by connecting a resistor divider from supply rail to ILIM_HIZ pin to ground. The pin voltage is calculated as: V(ILIM_HIZ) = 1 V + 40 × IDPM × RAC, in which IDPM is the target input current. The input current limit used by the charger is the lower setting of ILIM_HIZ pin and REG0x0F/0E(). When the pin voltage is below 0.4 V, the device enters Hi-Z mode with low quiescent current. When the pin voltage is above 0.8 V, the device is out of Hi-Z mode. |
LODRV1 | 29 | O | Buck mode low side power MOSFET (Q2) driver. Connect to low side n-channel MOSFET gate. |
LODRV2 | 26 | O | Boost mode low side power MOSFET (Q3) driver. Connect to low side n-channel MOSFET gate. |
PGND | 27 | GND | Device power ground. |
PROCHOT | 11 | O | Active low open drain output of processor hot indicator. It monitors adapter input current, battery discharge current, and system voltage. After any event in the PROCHOT profile is triggered, a pulse is asserted. The minimum pulse width is adjustable in REG0x23[6:3]. |
PSYS | 10 | O | Current mode system power monitor. The output current is proportional to the total power from the adapter and the battery. The gain is selectable through I2C. Place a resistor from PSYS to ground to generate output voltage. This pin can be floating if not in use. Its output voltage is clamped below 3.3 V. Place a capacitor in parallel with the resistor for filtering. |
REGN | 28 | PWR | 6-V linear regulator output supplied from VBUS or VSYS. The LDO is active when VBUS above VVBUS_CONVEN. Connect a 2.2- or 3.3-μF ceramic capacitor from REGN to power ground. REGN pin output is for power stage gate drive. |
SCL | 13 | I | I2C clock input. Connect to clock line from the host controller or smart battery. Connect a 10-kΩ pullup resistor according to I2C specifications. |
SDA | 12 | I/O | I2C open-drain data I/O. Connect to data line from the host controller or smart battery. Connect a 10-kΩ pullup resistor according to I2C specifications. |
SRN | 19 | PWR | Charge current sense resistor negative input. SRN pin is for battery voltage sensing as well. Connect SRN pin with optional 0.1-μF ceramic capacitor to GND for common-mode filtering. Connect a 0.1-μF ceramic capacitor from SRP to SRN to provide differential mode filtering. The leakage current on SRP and SRN are matched. |
SRP | 20 | PWR | Charge current sense resistor positive input. Connect SRP pin with optional 0.1-uF ceramic capacitor to GND for common-mode filtering. Connect a 0.1-μF ceramic capacitor from SRP to SRN to provide differential mode filtering. The leakage current on SRP and SRN are matched. |
SW1 | 32 | PWR | Buck mode high side power MOSFET driver source. Connect to the source of the high side n-channel MOSFET. |
SW2 | 23 | PWR | Boost mode high side power MOSFET driver source. Connect to the source of the high side n-channel MOSFET. |
VBUS | 1 | PWR | Charger input voltage. An input low pass filter of 1Ω and 0.47 µF (minimum) is recommended. |
VDDA | 7 | PWR | Internal reference bias pin. Connect a 10-Ω resistor from REGN to VDDA and a 1-μF ceramic capacitor from VDDA to power ground. |
VSYS | 22 | PWR | Charger system voltage sensing. The system voltage regulation limit is programmed in REG0x05/04() and REG0X0D/0C(). |
Thermal pad | – | – | Exposed pad beneath the IC. Always solder thermal pad to the board, and have vias on the thermal pad plane connecting to power ground planes. It serves as a thermal pad to dissipate the heat. |