JAJSL33A june   2020  – january 2021 BQ25731

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Revision History
  6. 5 Description (continued)
  7. 6 Device Comparison Table
  8. 7 Pin Configuration and Functions
  9. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics(BQ25731)
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Power-Up Sequence
      2. 9.3.2  Two-Level Battery Discharge Current Limit
      3. 9.3.3  Fast Role Swap Feature
      4. 9.3.4  CHRG_OK Indicator
      5. 9.3.5  Input and Charge Current Sensing
      6. 9.3.6  Input Voltage and Current Limit Setup
      7. 9.3.7  Battery Cell Configuration
      8. 9.3.8  Device HIZ State
      9. 9.3.9  USB On-The-Go (OTG)
      10. 9.3.10 Converter Operation
      11. 9.3.11 Inductance Detection Through IADPT Pin
      12. 9.3.12 Converter Compensation
      13. 9.3.13 Continuous Conduction Mode (CCM)
      14. 9.3.14 Pulse Frequency Modulation (PFM)
      15. 9.3.15 Switching Frequency and Dithering Feature
      16. 9.3.16 Current and Power Monitor
        1. 9.3.16.1 High-Accuracy Current Sense Amplifier (IADPT and IBAT)
        2. 9.3.16.2 High-Accuracy Power Sense Amplifier (PSYS)
      17. 9.3.17 Input Source Dynamic Power Management
      18. 9.3.18 Input Current Optimizer (ICO)
      19. 9.3.19 Two-Level Adapter Current Limit (Peak Power Mode)
      20. 9.3.20 Processor Hot Indication
        1. 9.3.20.1 PROCHOT During Low Power Mode
        2. 9.3.20.2 PROCHOT Status
      21. 9.3.21 Device Protection
        1. 9.3.21.1 Watchdog Timer
        2. 9.3.21.2 Input Overvoltage Protection (ACOV)
        3. 9.3.21.3 Input Overcurrent Protection (ACOC)
        4. 9.3.21.4 System Overvoltage Protection (SYSOVP)
        5. 9.3.21.5 Battery Overvoltage Protection (BATOVP)
        6. 9.3.21.6 Battery Discharge Overcurrent Protection (BATOC)
        7. 9.3.21.7 Battery Short Protection (BATSP)
        8. 9.3.21.8 System Undervoltage Lockout (VSYS_UVP)
        9. 9.3.21.9 Thermal Shutdown (TSHUT)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Forward Mode
      2. 9.4.2 USB On-The-Go
      3. 9.4.3 Pass Through Mode (PTM)-Patented Technology
    5. 9.5 Programming
      1. 9.5.1 I2C Serial Interface
        1. 9.5.1.1 Timing Diagrams
        2. 9.5.1.2 Data Validity
        3. 9.5.1.3 START and STOP Conditions
        4. 9.5.1.4 Byte Format
        5. 9.5.1.5 Acknowledge (ACK) and Not Acknowledge (NACK)
        6. 9.5.1.6 Target Address and Data Direction Bit
        7. 9.5.1.7 Single Read and Write
        8. 9.5.1.8 Multi-Read and Multi-Write
        9. 9.5.1.9 Write 2-Byte I2C Commands
    6. 9.6 Register Map
      1. 9.6.1  ChargeOption0 Register (I2C address = 01/00h) [reset = E70Eh]
      2. 9.6.2  ChargeCurrent Register (I2C address = 03/02h) [reset = 0080h]
        1. 9.6.2.1 Battery Low Voltage Current Clamp
      3. 9.6.3  ChargeVoltage Register (I2C address = 05/04h) [reset value based on CELL_BATPRESZ pin setting]
      4. 9.6.4  ChargerStatus Register (I2C address = 21/20h) [reset = 0000h]
      5. 9.6.5  ProchotStatus Register (I2C address = 23/22h) [reset = B800h]
      6. 9.6.6  IIN_DPM Register (I2C address = 25/24h) [reset = 4100h]
      7. 9.6.7  ADCVBUS/PSYS Register (I2C address = 27/26h)
      8. 9.6.8  ADCIBAT Register (I2C address = 29/28h)
      9. 9.6.9  ADCIIN/CMPIN Register (I2C address = 2B/2Ah)
      10. 9.6.10 ADCVSYS/VBAT Register (I2C address = 2D/2Ch)
      11. 9.6.11 ChargeOption1 Register (I2C address = 31/30h) [reset = 3F00h]
      12. 9.6.12 ChargeOption2 Register (I2C address = 33/32h) [reset = 00B7]
      13. 9.6.13 ChargeOption3 Register (I2C address = 35/34h) [reset = 0434h]
      14. 9.6.14 ProchotOption0 Register (I2C address = 37/36h) [reset = 4A81h(2S~5s) 4A09(1S)]
      15. 9.6.15 ProchotOption1 Register (I2C address = 39/38h) [reset = 41A0h]
      16. 9.6.16 ADCOption Register (I2C address = 3B/3Ah) [reset = 2000h]
      17. 9.6.17 ChargeOption4 Register (I2C address = 3D/3Ch) [reset = 0048h]
      18. 9.6.18 Vmin Active Protection Register (I2C address = 3F/3Eh) [reset = 006Ch(2s~5s)/0004h(1S)]
      19. 9.6.19 OTGVoltage Register (I2C address = 07/06h) [reset = 09C4h]
      20. 9.6.20 OTGCurrent Register (I2C address = 09/08h) [reset = 3C00h]
      21. 9.6.21 InputVoltage(VINDPM) Register (I2C address = 0B/0Ah) [reset =VBUS-1.28V]
      22. 9.6.22 IIN_HOST Register (I2C address = 0F/0Eh) [reset = 2000h]
      23. 9.6.23 ID Registers
        1. 9.6.23.1 ManufactureID Register (I2C address = 2Eh) [reset = 40h]
        2. 9.6.23.2 Device ID (DeviceAddress) Register (I2C address = 2Fh) [reset = D6h]
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Input Snubber and Filter for Voltage Spike Damping
        2. 10.2.2.2 ACP-ACN Input Filter
        3. 10.2.2.3 Inductor Selection
        4. 10.2.2.4 Input Capacitor
        5. 10.2.2.5 Output Capacitor
        6. 10.2.2.6 Power MOSFETs Selection
      3. 10.2.3 Application Curves
  12. 11Power Supply Recommendations
  13. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
      1. 12.2.1 Layout Example Reference Top View
      2. 12.2.2 Inner Layer Layout and Routing Example
  14. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 サード・パーティ製品に関する免責事項
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 サポート・リソース
    4. 13.4 Trademarks
    5. 13.5 静電気放電に関する注意事項
    6. 13.6 用語集
  15. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

10.2.2.5 Output Capacitor

Output capacitor also should have enough ripple current rating to absorb output switching ripple current. To get good loop stability, the resonant frequency of the output inductor and output capacitor should be designed between 10 kHz and 20 kHz. The preferred ceramic capacitor is 25-V X7R or X5R for output capacitor. Minimum 7 pcs of 10-μF 0603 package capacitor is suggested to be placed as close as possible to Q3&Q4 half bridge (between Q4 drain and Q3 source terminal). Total minimum output effective capacitance along VSYS distribution line is 50 μF refers to Table 10-1. Recommend to place minimum 20-μF MLCC capacitors after the charge current sense resistor for best stability.

Ceramic capacitors show a dc-bias effect. This effect reduces the effective capacitance when a dc-bias voltage is applied across a ceramic capacitor, as on the output capacitor of a charger. The effect may lead to a significant capacitance drop, especially for high output voltages and small capacitor packages. See the manufacturer's data sheet about the derating performance with a dc bias voltage applied. It may be necessary to choose a higher voltage rating or nominal capacitance value in order to get the required capacitance value at the operating point. Considering the 25-V 0603 package MLCC capacitance derating under 21-V to 23-V output voltage, the recommended practical capacitors configuration at VSYS output terminal can also be found in Table 10-1. Tantalum capacitors (POSCAP) can avoid dc-bias effect and temperature variation effect which are recommend to be used along VSYS output distribution line to meet total minimum effective output capacitance requirement.

Table 10-1 Minimum Output Capacitance Requirement
OUTPUT CAPACITORS vs TOTAL INPUT POWER 65 W 90 W 130 W
Minimum Effective Output Capacitance 50 μF 50 μF 50 μF
Minimum output capacitors at charger VSYS output terminal 7*10 μF (0603 25 V MLCC) 9*10 μF (0603 25 V MLCC) 9*10 μF (0603 25 V MLCC)
Additional output capacitors along VSYS distribution line 2*22 μF (25 V~35 V POSCAP) 2*22 μF (25 V~35 V POSCAP) 2*22 μF (25 V~35 V POSCAP)