JAJSNS5 December   2022 BQ28Z620

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 概要 (続き)
  6. 6 BQ28Z620 Changes from BQ28Z610-R1
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Thermal Information
    5. 8.5  Supply Current
    6. 8.6  Power Supply Control
    7. 8.7  Power-On Reset (POR)
    8. 8.8  Internal 1.8-V LDO
    9. 8.9  Current Wake Comparator
    10. 8.10 Coulomb Counter
    11. 8.11 ADC Digital Filter
    12. 8.12 ADC Multiplexer
    13. 8.13 Cell Balancing Support
    14. 8.14 Internal Temperature Sensor
    15. 8.15 NTC Thermistor Measurement Support
    16. 8.16 High-Frequency Oscillator
    17. 8.17 Low-Frequency Oscillator
    18. 8.18 Voltage Reference 1
    19. 8.19 Voltage Reference 2
    20. 8.20 Instruction Flash
    21. 8.21 Data Flash
    22. 8.22 Current Protection Thresholds
    23. 8.23 Current Protection Timing
    24. 8.24 N-CH FET Drive (CHG, DSG)
    25. 8.25 I2C Interface I/O
    26. 8.26 I2C Interface Timing
    27. 8.27 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Battery Parameter Measurements
        1. 9.3.1.1 BQ28Z620 Processor
      2. 9.3.2  Coulomb Counter (CC)
      3. 9.3.3  CC Digital Filter
      4. 9.3.4  ADC Multiplexer
      5. 9.3.5  Analog-to-Digital Converter (ADC)
      6. 9.3.6  ADC Digital Filter
      7. 9.3.7  Internal Temperature Sensor
      8. 9.3.8  External Temperature Sensor Support
      9. 9.3.9  Power Supply Control
      10. 9.3.10 Power-On Reset
      11. 9.3.11 Bus Communication Interface
      12. 9.3.12 I2C Timeout
      13. 9.3.13 Cell Balancing Support
      14. 9.3.14 N-Channel Protection FET Drive
      15. 9.3.15 Low Frequency Oscillator
      16. 9.3.16 High Frequency Oscillator
      17. 9.3.17 1.8-V Low Dropout Regulator
      18. 9.3.18 Internal Voltage References
      19. 9.3.19 Overcurrent in Discharge Protection
      20. 9.3.20 Short-Circuit Current in Charge Protection
      21. 9.3.21 Short-Circuit Current in Discharge 1 and 2 Protection
      22. 9.3.22 Primary Protection Features
      23. 9.3.23 Gas Gauging
      24. 9.3.24 Charge Control Features
      25. 9.3.25 Authentication
    4. 9.4 Device Functional Modes
      1. 9.4.1 Lifetime Logging Features
      2. 9.4.2 Configuration
        1. 9.4.2.1 Coulomb Counting
        2. 9.4.2.2 Cell Voltage Measurements
        3. 9.4.2.3 Current Measurements
        4. 9.4.2.4 Auto Calibration
        5. 9.4.2.5 Temperature Measurements
  10. 10Applications and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Design Requirements (Default)
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Setting Design Parameters
        2. 10.2.2.2 Calibration Process
        3. 10.2.2.3 Gauging Data Updates
      3. 10.2.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 サポート・リソース
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.24 N-CH FET Drive (CHG, DSG)

Typical values stated where TA = 25°C and VCC = 7.2 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 10 V (unless otherwise noted)
PARAMETERTEST CONDITIONMINTYPMAXUNIT
VRATIO Output voltage ratio vs battery voltage RatioDSG = (VDSG – VVC2)/VVC2, 2.2 V < VVC2 < 4.07 V, 10 MΩ between PACK and DSG, AFE_CONTROL_REGISTER[PMPDRV]=0 2.133 2.333 2.467 —
RatioDSG = (VDSG – VVC2)/VVC2, 2.2 V < VVC2 < 4.07 V, 10 MΩ between PACK and DSG, AFE_CONTROL_REGISTER[PMPDRV]=1 1.25 1.4 1.5
RatioCHG = (VCHG – VVC2)/VVC2, 2.2 V < VVC2 < 4.07 V, 10 MΩ between BAT and CHG, AFE_CONTROL_REGISTER[PMPDRV]=0 2.133 2.333 2.467
RatioCHG = (VCHG – VVC2)/VVC2, 2.2 V < VVC2 < 4.07 V, 10 MΩ between BAT and CHG, AFE_CONTROL_REGISTER[PMPDRV]=1 1.25 1.4 1.5
V(FETON) Output voltage, CHG and DSG on VDSG(ON) = VDSG – VVC2, 4.07 V ≤ VVC2 ≤ 10 V, 10 MΩ between PACK and DSG, AFE_CONTROL_REGISTER[PMPDRV]=0 8.75 9.5 10.25 V
VCHG(ON) = VCHG – VVC2, 4.07 V ≤ VVC2 ≤ 10 V, 10 MΩ between VC2 and CHG, AFE_CONTROL_REGISTER[PMPDRV]=1 5.15 5.75 6.15
VCHG(ON) = VCHG – VVC2, 4.07 V ≤ VVC2 ≤ 10 V, 10 MΩ between VC2 and CHG, AFE_CONTROL_REGISTER[PMPDRV]=0 8.75 9.5 10.25
VCHG(ON) = VCHG – VVC2, 4.07 V ≤ VVC2 ≤ 10 V, 10 MΩ between VC2 and CHG, AFE_CONTROL_REGISTER[PMPDRV]=1 5.15 5.75 6.15
V(FETOFF) Output voltage, CHG and DSG off VDSG(OFF) = VDSG – VPACK, 10 MΩ between PACK and DSG –0.4 0.4 V
VCHG(OFF) = VCHG – VBAT, 10 MΩ between VC2 and CHG –0.4 0.4
ICHGPUMP CHG pin charge pump IQ Measure device IQ with 1uA CHG pin charge pump load and 10uA charge pump load, find the delta. AFE_CONTROL_REGISTER[PUMPDRV]=0 70 µA
IDSGPUMP DSG pin charge pump IQ Measure device IQ with 1uA DSG pin charge pump load and 10uA charge pump load, find the delta. AFE_CONTROL_REGISTER[PUMPDRV]=0 70 µA
tR Rise time VDSG from 0% to 35% VDSG(ON)(TYP), VBAT ≥ 2.2 V, CL = 4.7 nF between DSG and PACK, 5.1 kΩ between DSG and CL, 10 MΩ between PACK and DSG 200 500 µs
VCHG from 0% to 35% VCHG(ON)(TYP), VVC2 ≥ 2.2 V, CL = 4.7 nF between CHG and VC2, 5.1 kΩ between CHG and CL, 10 MΩ between VC2 and CHG 200 500
tF Fall time VDSG from VDSG(ON)(TYP) to 1 V, VVC2 ≥ 2.2 V, CL = 4.7 nF between DSG and PACK, 5.1 kΩ between DSG and CL, 10 MΩ between PACK and DSG 40 300 µs
VCHG from VCHG(ON)(TYP) to 1 V, VVC2 ≥ 2.2 V, CL = 4.7 nF between CHG and VC2, 5.1 kΩ between CHG and CL, 10 MΩ between VC2 and CHG 40 200