JAJSCB2K April   2020  – July 2020 BQ77904 , BQ77905

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
      1. 8.1.1 Device Functionality Summary
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Protection Summary
      2. 8.3.2  Fault Operation
        1. 8.3.2.1  Operation in OV
        2. 8.3.2.2  Operation in UV
        3. 8.3.2.3  Operation in OW
        4. 8.3.2.4  Operation in OCD1
        5. 8.3.2.5  Operation in OCD2
        6. 8.3.2.6  Operation in SCD
        7. 8.3.2.7  Overcurrent Recovery Timer
        8. 8.3.2.8  Load Removal Detection
        9. 8.3.2.9  Load Removal Detection in UV
        10. 8.3.2.10 Operation in OTC
        11. 8.3.2.11 Operation in OTD
        12. 8.3.2.12 Operation in UTC
        13. 8.3.2.13 Operation in UTD
      3. 8.3.3  Protection Response and Recovery Summary
      4. 8.3.4  Configuration CRC Check and Comparator Built-In-Self-Test
      5. 8.3.5  Fault Detection Method
        1. 8.3.5.1 Filtered Fault Detection
      6. 8.3.6  State Comparator
      7. 8.3.7  DSG FET Driver Operation
      8. 8.3.8  CHG FET Driver Operation
      9. 8.3.9  External Override of CHG and DSG Drivers
      10. 8.3.10 Configuring 3-S, 4-S, or 5-S Mode
      11. 8.3.11 Stacking Implementations
      12. 8.3.12 Zero-Volt Battery Charging Inhibition
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power Modes
        1. 8.4.1.1 Power-On Reset (POR)
        2. 8.4.1.2 FAULT Mode
        3. 8.4.1.3 SHUTDOWN Mode
        4. 8.4.1.4 Customer Fast Production Test Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Recommended System Implementation
        1. 9.1.1.1 CHG and DSG FET Rise and Fall Time
        2. 9.1.1.2 Protecting CHG and LD
        3. 9.1.1.3 Protecting CHG FET
        4. 9.1.1.4 Using Load Detect for UV Fault Recovery
        5. 9.1.1.5 Temperature Protection
        6. 9.1.1.6 Adding Filter to Sense Resistor
        7. 9.1.1.7 Using a State Comparator in an Application
          1. 9.1.1.7.1 Examples
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Design Example
      3. 9.2.3 Application Curves
    3. 9.3 System Examples
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Links
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 サポート・リソース
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 用語集
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

9.2.1 Design Requirements

For this design example, use the parameters shown in Table 9-1.

Table 9-1 Design Parameters
PARAMETERDESCRIPTIONVALUES
RINCell voltage sensing (VCx pins) filter resistor1 kΩ ±5%
CINCell voltage sensing (VCx pins) filter capacitor0.1 µF ±10%
RVDDSupply voltage filter resistor1 kΩ ±5%
CVDDSupply voltage filter capacitor1 µF ±20%
RTSNTC thermistor103AT, 10 kΩ ±3%
RTS_PUThermistor pullup resistor to VTB pin, assuming using 103AT NTC or NTC with similar resistance-temperature characteristics10 kΩ ±1%
RGS_CHGCHG FET gate-source resistorLoad removal is enabled for UV recovery.3.3 MΩ ±5%
Load removal is disabled for UV recovery.1 MΩ ±5%
RGS_DSGDSG FET gate-source resistor1 MΩ ±5%
RCHGCHG gate resistorSystem designers should adjust this parameter to meet the desired FET rise/fall time.1 kΩ ±5%
If additional components are used to protect the CHG FET and/or to enable load removal detection for UV recovery.1 MΩ ±5%
RDSGDSG gate resistor, system designers should adjust this parameter to meet the desired FET rise/fall time.4.5 kΩ ±5%
RCRTC and RCTRDCTRC and CTRD current limit resistor10 MΩ ±5%
RLDLD resistor for load removal detection450 KΩ ±5%
RSNSCurrent sense resistor for current protection. System designers should change this parameter according to the application current protection requirements.1 mΩ ±1%