SWRS112H June   2011  – July 2015 CC1120

PRODUCTION DATA.  

  1. 1Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2Revision History
  3. 3Terminal Configuration and Functions
    1. 3.1 Pin Diagram
    2. 3.2 Pin Configuration
  4. 4Specifications
    1. 4.1  ESD Ratings
    2. 4.2  Recommended Operating Conditions (General Characteristics)
    3. 4.3  RF Characteristics
    4. 4.4  Power Consumption Summary
    5. 4.5  Receive Parameters
    6. 4.6  Transmit Parameters
    7. 4.7  PLL Parameters
    8. 4.8  32-MHz Clock Input (TCXO)
    9. 4.9  32-MHz Crystal Oscillator
    10. 4.10 32-kHz Clock Input
    11. 4.11 32-kHz RC Oscillator
    12. 4.12 I/O and Reset
    13. 4.13 Temperature Sensor
    14. 4.14 Thermal Resistance Characteristics for RHB Package
    15. 4.15 Timing Requirements
    16. 4.16 Regulatory Standards
    17. 4.17 Typical Characteristics
  5. 5Detailed Description
    1. 5.1 Block Diagram
    2. 5.2 Frequency Synthesizer
    3. 5.3 Receiver
    4. 5.4 Transmitter
    5. 5.5 Radio Control and User Interface
    6. 5.6 Enhanced Wake-On-Radio (eWOR)
    7. 5.7 Sniff Mode
    8. 5.8 Antenna Diversity
    9. 5.9 WaveMatch
  6. 6Application, Implementation, and Layout
    1. 6.1 Application Information
      1. 6.1.1 Typical Application Circuit
      2. 6.1.2 TI Reference Designs
  7. 7Device and Documentation Support
    1. 7.1 Device Support
      1. 7.1.1 Development Support
        1. 7.1.1.1 Configuration Software
      2. 7.1.2 Device and Development-Support Tool Nomenclature
    2. 7.2 Documentation Support
      1. 7.2.1 Community Resources
    3. 7.3 Trademarks
    4. 7.4 Electrostatic Discharge Caution
    5. 7.5 Glossary
  8. 8Mechanical Packaging and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

4 Specifications

All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470 rev.1.0.1, or CC1120EM_169 rev.1.2.

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Supply voltage (VDD, AVDD_x) All supply pins must have the same voltage –0.3 3.9 V
Input RF level +10 dBm
Voltage on any digital pin Max 3.9 V –0.3 VDD + 0.3 V
Voltage on analog pins (including DCPL pins) –0.3 2.0 V
Storage temperature, Tstg –40 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under general characteristics is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to VSS unless otherwise noted.

4.1 ESD Ratings

VALUE UNIT
VESD Electrostatic discharge (ESD) performance Human body model (HBM), per ANSI/ESDA/JEDEC JS001(1) ±2 kV
Charged device model (CDM), per JESD22-C101(2) All pins ±500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V HBM allows safe manufacturing with a standard ESD control process.

4.2 Recommended Operating Conditions (General Characteristics)

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Voltage supply range All supply pins must have the same voltage 2.0 3.6 V
Voltage on digital inputs 0 VDD V
Ambient temperature range –40 85 °C

4.3 RF Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Frequency bands 820 960 MHz
410 480
See SWRA398, Using the CC112x/CC1175 at 274 to 320 MHz, for more information (273.3) (320)
164 192
Contact TI for more information about the use of these frequency bands (205) (240)
(136.7) (160)
Frequency resolution In 820–950 MHz band 30 Hz
In 410–480 MHz band 15
In 164–192 MHz band 6
Data rate Packet mode 0 200 kbps
Transparent mode 0 100
Data rate step size 1e-4 bps

4.4 Power Consumption Summary

TA = 25°C, VDD = 3.0 V if nothing else stated
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CURRENT CONSUMPTION: STATIC MODES
Power down with retention 0.12 1 µA
Low-power RC oscillator running 0.5
XOFF mode Crystal oscillator / TCXO disabled 170 µA
IDLE mode Clock running, system waiting with no radio activity 1.3 mA
CURRENT CONSUMPTION, TRANSMIT MODES
TX current consumption +10 dBm 950-MHz band (high-performance mode) 37 mA
TX current consumption 0 dBm 26 mA
TX current consumption +14 dBm 868-, 915-, and 920-MHz bands (high-performance mode) 45 mA
TX current consumption +10 dBm 34 mA
TX current consumption +15 dBm 434-MHz band (high-performance mode) 50 mA
TX current consumption +14 dBm 45 mA
TX current consumption +10 dBm 34 mA
TX current consumption +15 dBm 169-MHz band (high-performance mode) 54 mA
TX current consumption +14 dBm 49 mA
TX current consumption +10 dBm 41 mA
LOW-POWER MODE(1)
TX current consumption +10 dBm 32 mA
CURRENT CONSUMPTION, RECEIVE MODE (HIGH-PERFORMANCE MODE)(1)
RX wait for sync 1.2 kbps, 4-byte preamble Using RX sniff mode, where the receiver wakes up at regular intervals to look for an incoming packet(2) 2 mA
38.4 kbps, 4-byte preamble 13.4
RX peak current 433-, 868-, 915-, 920-, and 950–MHz bands Peak current consumption during packet reception at the sensitivity threshold 22 mA
169-MHz band 23
Average current consumption
Check for data packet every 1 second using Wake on Radio		 50 kbps, 5-byte preamble, 40-kHz RC oscillator used as sleep timer 15 µA
CURRENT CONSUMPTION, RECEIVE MODE (LOW-POWER MODE)(1)
RX peak current
Low-power RX mode		 1.2 kbps Peak current consumption during packet reception at the sensitivity level 17 mA
(1) TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated.
(2) See the sniff mode design note for more information (SWRA428).

4.5 Receive Parameters

All RX measurements made at the antenna connector, to a bit error rate (BER) limit of 1%.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
GENERAL RECEIVE PARAMETERS (HIGH-PERFORMANCE MODE)(1)
Saturation +10 dBm
Digital channel filter programmable bandwidth 8 200 kHz
IIP3, normal mode At maximum gain –14 dBm
IIP3, high linearity mode Using 6-dB gain reduction in front end –8 dBm
Data rate offset tolerance With carrier sense detection enabled and assuming
4-byte preamble		 ±12%
With carrier sense detection disabled ±0.2%
Spurious emissions 1–13 GHz (VCO leakage at 3.5 GHz) Radiated emissions measured according to
ETSI EN 300 220, fc = 869.5 MHz		 –56 dBm
30 MHz to 1 GHz < –57
Optimum source impedance 868-, 915-, and 920-MHz bands (Differential or single-ended RX configurations) 60 + j60 /
30 + j30		 Ω
433-MHz band 100 + j60 /
50 + j30
169-MHz band 140 + j40 /
70 + j20
RX PERFORMANCE IN 950-MHZ BAND (HIGH-PERFORMANCE MODE)(2)
Sensitivity(3) 1.2 kbps, DEV = 4 kHz CHF = 10 kHz(4) –120 dBm
1.2 kbps, DEV = 20 kHz CHF = 50 kHz(4) –114
50 kbps 2GFSK, DEV = 25 kHz,
CHF = 100 kHz(4)		 –107
200 kbps, DEV = 83 kHz (outer symbols),
CHF = 200 kHz(4), 4GFSK(5)		 –100
Blocking and
Selectivity		 1.2 kbps 2FSK, 12.5-kHz channel separation, 4-kHz deviation,
10-kHz channel filter		 ± 12.5 kHz (adjacent channel) 51 dB
± 25 kHz (alternate channel) 52
± 1 MHz 73
± 2 MHz 76
± 10 MHz 81
1.2 kbps 2FSK, 50-kHz channel separation, 20-kHz deviation,
50-kHz channel filter		 ± 50 kHz (adjacent channel) 47
+ 100 kHz (alternate channel) 48
± 1 MHz 69
± 2 MHz 71
± 10 MHz 78
50 kbps 2GFSK, 200-kHz channel separation, 25-kHz deviation,
100-kHz channel filter (Same modulation format as 802.15.4g Mandatory Mode)		 ± 200 kHz (adjacent channel) 43
± 400 kHz (alternate channel) 51
± 1 MHz 62
± 2 MHz 65
± 10 MHz 71
200 kbps 4GFSK, 83-kHz deviation (outer symbols), 200-kHz channel filter, zero IF ± 200 kHz (adjacent channel) 37
± 400 kHz (alternate channel) 44
± 1 MHz 55
± 2 MHz 58
± 10 MHz 64
RX PERFORMANCE IN 868-, 915-, AND 920-MHZ BANDS (HIGH-PERFORMANCE MODE)(2)
Sensitivity 300 bps with coding gain (using a PN spreading sequence with 4 chips per data bit) DEV = 4 kHz
CHF = 10 kHz(4)		 –127 dBm
1.2 kbps, DEV = 4 kHz CHF = 10 kHz(4) –123
1.2 kbps, DEV = 10 kHz CHF = 42 kHz(4) –120
1.2 kbps, DEV = 20 kHz CHF = 50 kHz(4) –117
4.8 kbps OOK –114
38.4 kbps, DEV = 20 kHz CHF = 100 kHz(4) –110
50 kbps 2GFSK, DEV = 25 kHz,
CHF = 100 kHz(4)		 –110
200 kbps, DEV = 83 kHz (outer symbols),
CHF = 200 kHz(4), 4GFSK		 –103
Blocking and
Selectivity		 1.2-kbps 2-FSK, 12.5-kHz channel separation, 4-kHz deviation,
10-kHz channel filter		 ± 12.5 kHz (adjacent channel) 54 dB
± 25 kHz (alternate channel) 54
± 1 MHz 75
± 2 MHz 79
± 10 MHz 87
1.2-kbps 2-FSK, 12.5-kHz channel separation, using settings optimized for blocking performance
(3-kHz deviation, 7.8-kHz channel filter, minimum loop bandwidth) 		± 1 kHz 78
± 2 kHz 82
± 8 MHz 88
± 10 MHz 88
1.2-kbps 2-FSK, 50-kHz channel separation, 20-kHz deviation,
50-kHz channel filter		 ± 50 kHz (adjacent channel) 48
+ 100 kHz (alternate channel) 48
± 1 MHz 69
± 2 MHz 74
± 10 MHz 81
38.4-kbps 2-GFSK, 100-kHz channel separation, 20-kHz deviation, 100-kHz channel filter + 100 kHz (adjacent channel) 42
± 200 kHz (alternate channel) 43
± 1 MHz 62
± 2 MHz 66
± 10 MHz 74
50-kbps 2-GFSK, 200-kHz channel separation, 25-kHz deviation, 100-kHz channel filter
(Same modulation format as 802.15.4g Mandatory Mode)		 ± 200 kHz (adjacent channel) 43
± 400 kHz (alternate channel) 50
± 1 MHz 61
± 2 MHz 65
± 10 MHz 74
200-kbps 4-GFSK, 83-kHz deviation (outer symbols), 200-kHz channel filter, zero IF ± 200 kHz (adjacent channel) 36
± 400 kHz (alternate channel) 44
± 1 MHz 55
± 2 MHz 59
± 10 MHz 67
Image rejection (image compensation enabled) 1.2 kbps, DEV = 4 kHz CHF = 10 kHz(4), image at –125 kHz 54 dB
RX PERFORMANCE IN 434-MHZ BAND (HIGH-PERFORMANCE MODE)(2)
Sensitivity 1.2 kbps, DEV = 4 kHz CHF = 10 kHz(4)   –123   dBm
50 kbps 2GFSK, DEV = 25 kHz,
CHF = 100 kHz 		  –109  
1.2 kbps, DEV = 20 kHz CHF = 50 kHz(4)   –116  
Blocking and
Selectivity		 1.2 kbps 2FSK, 12.5-kHz channel separation, 4-kHz deviation,
10-kHz channel filter 		± 12.5 kHz (adjacent channel)   60   dB
± 25 kHz (alternate channel)   60  
± 1 MHz   79  
± 2 MHz   82  
± 10 MHz   91  
1.2 kbps 2FSK, 50-kHz channel separation, 20-kHz deviation,
50-kHz channel filter 		± 50 kHz (adjacent channel)   54  
+ 100 kHz (alternate channel)   54  
± 1 MHz   74  
± 2 MHz   78  
± 10 MHz   86  
38.4 kbps 2GFSK, 100-kHz channel separation, 20-kHz deviation,
100-kHz channel filter 		+ 100 kHz (adjacent channel)   47  
± 200 kHz (alternate channel)   50  
± 1 MHz   67  
± 2 MHz   71  
± 10 MHz   78  
RX PERFORMANCE IN 169-MHZ BAND (HIGH-PERFORMANCE MODE)(2)
Sensitivity 1.2 kbps, DEV = 4 kHz CHF = 10 kHz(4)   –123   dbm
1.2 kbps, DEV = 20 kHz CHF = 50 kHz(4)   –117  
Blocking and
Selectivity		 1.2 kbps 2FSK, 12.5-kHz channel separation, 4-kHz deviation,
10-kHz channel filter 		± 12.5 kHz (adjacent channel)   64   dB
± 25 kHz (alternate channel)   66  
± 1 MHz   82  
± 2 MHz   83  
± 10 MHz   89  
1.2 kbps 2FSK, 50-kHz channel separation, 20-kHz deviation,
50-kHz channel filter 		± 50 kHz (adjacent channel)   60  
+ 100 kHz (alternate channel)   60  
± 1 MHz   76  
± 2 MHz   77  
± 10 MHz   83  
Spurious response rejection 1.2 kbps 2FSK, 12.5-kHz channel separation, 4-kHz deviation,
10-kHz channel filter 		70   dB
Image rejection (image compensation enabled) 1.2 kbps, DEV = 4 kHz CHF = 10 kHz(4), image at –125 kHz   66   dB
RX PERFORMANCE IN LOW-POWER MODE(1)
Sensitivity 1.2 kbps, DEV = 4 kHz CHF = 10 kHz(4)   –111 dBm
38.4 kbps, DEV = 50 kHz CHF = 100 kHz(4)   –99
50 kbps 2GFSK, DEV = 25 kHz,
CHF = 100 kHz(4)		   –99
Blocking and
Selectivity		 1.2 kbps 2FSK, 12.5-kHz channel separation, 4-kHz deviation,
10-kHz channel filter 		± 12.5 kHz (adjacent channel) 46   dB
± 25 kHz (alternate channel) 46  
± 1 MHz 73  
± 2 MHz 78  
± 10 MHz 79  
1.2 kbps 2FSK, 50-kHz channel separation, 20-kHz deviation,
50-kHz channel filter 		± 50 kHz (adjacent channel) 43  
+ 100 kHz (alternate channel) 45  
± 1 MHz 71  
± 2 MHz 74  
± 10 MHz 75  
38.4 kbps 2GFSK, 100-kHz channel separation, 20-kHz deviation, 100-kHz channel filter   + 100 kHz (adjacent channel) 37  
+ 200 kHz (alternate channel) 43  
± 1 MHz 58  
± 2 MHz 62  
+ 10 MHz 64  
50 kbps 2GFSK, 200-kHz channel separation, 25-kHz deviation, 100-kHz channel filter
(Same modulation format as 802.15.4g Mandatory Mode) 		+ 200 kHz (adjacent channel) 43  
+ 400 kHz (alternate channel) 52  
± 1 MHz 60  
± 2 MHz 64  
± 10 MHz 65  
Saturation +10   dBm
(1) TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated.
(2) TA = 25°C, VDD = 3.0 V if nothing else stated.
(3) Sensitivity can be improved if the TX and RX matching networks are separated.
(4) DEV is short for deviation, CHF is short for Channel Filter Bandwidth
(5) BT = 0.5 is used in all GFSK measurements

4.6 Transmit Parameters

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Maximum output power At 950 MHz +12 dBm
At 915- and 920-MHz +14
At 915- and 920-MHz with VDD = 3.6 V +15
At 868 MHz +15
At 868 MHz with VDD = 3.6 V +16
At 433 MHz +15
At 433 MHz with VDD = 3.6 V +16
At 169 MHz +15
At 169 MHz with VDD = 3.6 V +16
Minimum output power Within fine step size range –11 dBm
Within coarse step size range –40
Output power step size Within fine step size range 0.4 dB
Adjacent channel power 4-GFSK 9.6 kbps in 12.5-kHz channel, measured in
100-Hz bandwidth at 434 MHz (FCC Part 90 Mask D compliant) 		–75 dBc
4-GFSK 9.6 kbps in 12.5-kHz channel, measured in
8.75-kHz bandwidth (ETSI EN 300 220 compliant) 		–58
2-GFSK 2.4 kbps in 12.5-kHz channel, 1.2-kHz deviation –61
Spurious emissions
(not including harmonics) 		  <–60 dBm
Harmonics 2nd Harm, 169 MHz Transmission at +14 dBm (or maximum allowed in applicable band where this is less than +14 dBm) using TI reference design Emissions measured according to ARIB T-96 in 950-MHz band, ETSI EN 300-220 in 170-, 433-, and 868-MHz bands and FCC part 15.247 in 450- and 915-MHz band Fourth harmonic in 915-MHz band will require extra filtering to meet FCC requirements if transmitting for long intervals
(>50-ms periods) 		–39 dBm
3rd Harm, 169 MHz –58
2nd Harm, 433 MHz –56
3rd Harm, 433 MHz –51
2nd Harm, 450 MHz –60
3rd Harm, 450 MHz –45
2nd Harm, 868 MHz –40
3rd Harm, 868 MHz –42
2nd Harm, 915 MHz 56 dBµV/m
3rd Harm, 915 MHz 52
4th Harm, 915 MHz 60
2nd Harm, 950 MHz –58 dBm
3rd Harm, 950 MHz –42
Optimum load impedance 868-, 915-, and 920-MHz bands 35 + j35 Ω
433 MHz band 55 + j25
169 MHz band 80 + j0

4.7 PLL Parameters

TA = 25°C, VDD = 3.0 V if nothing else stated
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
HIGH-PERFORMANCE MODE
Phase noise in 950-MHz band ± 10 kHz offset –99   dBc/Hz
± 100 kHz offset –99  
± 1 MHz offset –123  
Phase noise in 868-, 915-, 920-MHz bands ± 10 kHz offset –99   dBc/Hz
± 100 kHz offset –100  
± 1 MHz offset –122  
Phase noise in 433-MHz band ± 10 kHz offset –106   dBc/Hz
± 100 kHz offset –107  
± 1 MHz offset –127  
Phase noise in 169-MHz band ± 10 kHz offset –111   dBc/Hz
± 100 kHz offset –116  
± 1 MHz offset –135  
LOW-POWER MODE(1)
Phase noise in 950-MHz band ± 10 kHz offset –90   dBc/Hz
± 100 kHz offset –92  
± 1 MHz offset –124  
Phase noise in 868-, 915-, 920-MHz bands ± 10 kHz offset –95   dBc/Hz
± 100 kHz offset –95  
± 1 MHz offset –124  
Phase noise in 433-MHz band ± 10 kHz offset –98   dBc/Hz
± 100 kHz offset –102  
± 1 MHz offset –129  
Phase noise in 169-MHz band ± 10 kHz offset –106   dBc/Hz
± 100 kHz offset –110  
± 1 MHz offset –136  
(1) TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

4.8 32-MHz Clock Input (TCXO)

TA = 25°C, VDD = 3.0 V if nothing else stated
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Clock frequency   31.25 32 33.6 MHz
TCXO with CMOS output(1) High input voltage TCXO with CMOS output directly coupled to pin EXT_OSC 1.4 VDD V
Low input voltage 0 0.6
Clipped sine output Clock input amplitude
(peak-to-peak)		 TCXO clipped sine output connected to pin EXT_OSC through series capacitor 0.8 1.5 V
(1) For TCXO with CMOS output rise and fall time, see Section 4.15.

4.9 32-MHz Crystal Oscillator

TA = 25°C, VDD = 3.0 V if nothing else stated
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Crystal frequency It is expected that there be will degraded sensitivity at multiples of XOSC/2 in RX, and an increase in spurious emissions when the RF channel is close to multiples of XOSC in TX. We recommend that the RF channel is kept RX_BW/2 away from XOSC/2 in RX, and that the level of spurious emissions be evaluated if the RF channel is closer than 1 MHz to multiples of XOSC in TX. 31.25 32   33.6 MHz
Load capacitance (CL)     10   pF
ESR Simulated over operating conditions     60 Ω

4.10 32-kHz Clock Input

TA = 25°C, VDD = 3.0 V if nothing else stated
PARAMETER MIN TYP MAX UNIT
Clock frequency   32   kHz
32-kHz clock input pin input high voltage 0.8 × VDD     V
32-kHz clock input pin input high voltage     0.2 × VDD V

4.11 32-kHz RC Oscillator

TA = 25°C, VDD = 3.0 V if nothing else stated
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Frequency After calibration   32   kHz
Frequency accuracy after calibration Relative to frequency reference
(32-MHz crystal or TCXO) 		  ±0.1%  
Initial calibration time(1)    
(1) For Initial calibration time of the 32-kHz RC Oscillator, see Section 4.15.

4.12 I/O and Reset

TA = 25°C, VDD = 3.0 V if nothing else stated
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Logic input high voltage 0.8 × VDD     V
Logic input low voltage 0.2 × VDD V
Logic output high voltage At 4-mA output load or less 0.8 × VDD     V
Logic output low voltage 0.2 × VDD V
Power-on reset threshold Voltage on DVDD pin   1.3   V

4.13 Temperature Sensor

TA = 25°C, VDD = 3.0 V if nothing else stated(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Temperature sensor range –40   85 °C
Temperature coefficient Change in sensor output voltage versus change in temperature   2.66   mV/°C
Typical output voltage Typical sensor output voltage at TA = 25°C,
VDD = 3.0 V 		  794   mV
VDD coefficient Change in sensor output voltage versus change in VDD   1.17   mV/V
(1) The CC1120 device can be configured to provide a voltage proportional to temperature on GPIO1. The temperature can be estimated by measuring this voltage (see Section 4.13, Temperature Sensor). For more information, refer to CC112X/CC120X On-Chip Temperature Sensor (SWRA415).

4.14 Thermal Resistance Characteristics for RHB Package

NAME DESCRIPTION °C/W(1)
RΘJC(top) Junction-to-case (top) 21.1
RΘJB Junction-to-board 5.3
RΘJA Junction-to-free air 31.3
PsiJT Junction-to-package top 0.2
PsiJB Junction-to-board 5.3
RΘJC(bot) Junction-to-case (bottom) 0.8
(1) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘJC] value, which is based on a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these EIA/JEDEC standards:
  • JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
  • JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements
Power dissipation of 40 mW and an ambient temperature of 25ºC is assumed.

4.15 Timing Requirements

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated
PARAMETER TEST CONDITIONS MIN NOM MAX UNIT
Power down to IDLE Depends on crystal   0.4   ms
IDLE to RX/TX Calibration disabled   166   µs
Calibration enabled   461  
RX/TX turnaround     50   µs
RX/TX to IDLE time Calibrate when leaving RX/TX enabled   296   µs
Calibrate when leaving RX/TX disabled   0  
Frequency synthesizer calibration When using SCAL strobe   391   µs
Time from start RX until valid RSSI
Including gain settling (function of channel bandwidth. Programmable for trade-off between speed and accuracy) 		12.5-kHz channels   4.6   ms
200-kHz channels   0.3  
32-MHz CLOCK INPUT (TCXO)(1)
TCXO with CMOS output Rise and fall time 2 ns
32-kHz RC OSCILLATOR(2)
Initial calibration time 1.6 ns
(1) See Section 4.8 for more information about the 32-MHz Clock Input (TCXO).
(2) See Section 4.11 for more information about the 32-kHz RC Oscillator.

4.16 Regulatory Standards

PERFORMANCE MODE FREQUENCY BAND SUITABLE FOR COMPLIANCE WITH
High-performance mode 820–960 MHz(1) ARIB T-96
ARIB T-108
ETSI EN 300 220 category 2
ETSI EN 54-25
FCC PART 101
FCC PART 24 SUBMASK D
FCC PART 15.247
FCC PART 15.249
FCC PART 90 MASK G
FCC PART 90 MASK J
410–480 MHz(2) ARIB T-67
ARIB RCR STD-30
ETSI EN 300 220 category 1
FCC PART 90 MASK D
FCC PART 90 MASK G
164–192 MHz(2) ETSI EN 300 220 category 1
FCC PART 90 MASK D
Low-power mode 820–960 MHz ETSI EN 300 220 category 2
FCC PART 15.247
FCC PART 15.249
410–480 MHz ETSI EN 300 220 category 2
164–192 MHz ETSI EN 300 220 category 2
(1) Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender such as the CC1190 device
(2) Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender

4.17 Typical Characteristics

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated.

All measurements performed on CC1120EM_868_915 rev.1.0.1, CC1120EM_955 rev.1.2.1, CC1120EM_420_470 rev.1.0.1, or CC1120EM_169 rev.1.2.

Figure 4-17 was measured at the 50-Ω antenna connector.

CC1120 tc01_swrs112.gif
1.2 kbps, 4-kHz Deviation, 10-kHz Channel Filter Bandwidth
Figure 4-1 Sensitivity vs Temperature
CC1120 tc03_swrs112.gif
1.2 kbps, 4-kHz Deviation, 10-kHz Channel Filter Bandwidth
Figure 4-3 Sync Word Sensitivity vs Voltage
CC1120 tc05_swrs112.gif
1.2 kbps, 4-kHz Deviation, 10-kHz Channel Filter Bandwidth
Figure 4-5 Selectivity vs Offset Frequency (12.5-kHz Channels)
CC1120 tc07_swrs112.gif
1.2 kbps, 4-kHz Deviation, 10-kHz Channel Filter Bandwidth
Figure 4-7 RSSI vs Input Level
CC1120 tc09_swrs112.gif
Max Setting, 170 MHz,
Figure 4-9 Output Power vs Voltage
CC1120 tc11_swrs112.gif
Figure 4-11 TX Current at 868 MHz
vs PA Power Setting
CC1120 tc15_swrs112.png
9.6 kbps in 12.5-kHz Channel
Figure 4-13 FCC Part 90 Mask D
CC1120 tc17_swrs112.gif
Figure 4-15 GPIO Output High Voltage vs Current Being Sourced
CC1120 tc12_swrs112.png
Figure 4-17 Output Power vs Load Impedance (+14-dBm Setting)
CC1120 tc02_swrs112.gif
1.2 kbps, 4-kHz Deviation, 10-kHz Channel Filter Bandwidth
Figure 4-2 Sensitivity vs Voltage
CC1120 tc04_swrs112.gif
1.2 kbps, 4-kHz Deviation, 10-kHz Channel Filter Bandwidth
Figure 4-4 RX Current vs Input Level
CC1120 tc06_swrs112.gif
1.2 kbps, 4-kHz Deviation, 10-kHz Channel Filter Bandwidth
Figure 4-6 Selectivity vs Offset Frequency (12.5-kHz Channels)
CC1120 tc08_swrs112.gif
Max Setting, 170 MHz, 3.6 V
Figure 4-8 Output Power vs Temperature
CC1120 tc10_swrs112.gif
Figure 4-10 Output Power at 868 MHz vs PA Power Setting
CC1120 tc16_swrs112.png
Figure 4-12 Phase Noise in 868-MHz Band
CC1120 tc14_swrs112.png
1.2 kbps 2-FSK, DEV = 4 kHz
Figure 4-14 Eye Diagram
CC1120 tc18_swrs112.gif
Figure 4-16 GPIO Output Low Voltage vs Current Being Sinked