The CDCE62005 is a high performance clock generator and distributor featuring low output jitter, a high degree of configurability via a SPI interface, and programmable start up modes determined by on-chip EEPROM. Specifically tailored for clocking data converters and high-speed digital signals, the CDCE62005 achieves jitter performance well under 1 ps RMS (10 kHz to 20 MHz integration bandwidth).
The CDCE62005 incorporates a synthesizer block with partially integrated loop filter, a clock distribution block including programmable output formats, and an input block featuring an innovative smart multiplexer. The clock distribution block includes five individually programmable outputs that can be configured to provide different combinations of output formats (LVPECL, LVDS, LVCMOS). Each output can also be programmed to a unique output frequency (up to 1.5 GHz) and skew relationship via a programmable delay block (note that frequency range depends on operational mode and output format selected). If all outputs are configured in single-ended mode (for example, LVCMOS), the CDCE62005 supports up to ten outputs. Each output can select one of four clock sources to condition and distribute including any of the three clock inputs or the output of the frequency synthesizer. The input block includes two universal differential inputs which support frequencies in the range of 40 kHz to 500 MHz and an auxiliary input that can be configured to connect to an external crystal via an on chip oscillator block.
The smart input multiplexer has two modes of operation, manual and automatic. In manual mode, the user selects the synthesizer reference via the SPI interface. In automatic mode, the input multiplexer will automatically select between the highest priority input clock available.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
CDCE62005 | VQFN (48) | 7.00 mm × 7.00 mm |
Changes from F Revision (January 2015) to G Revision
Changes from E Revision (July 2014) to F Revision
Changes from D Revision (April 2011) to E Revision
Changes from C Revision (February, 2010) to D Revision
Changes from B Revision (July, 2009) to C Revision
PIN | TYPE | DESCRIPTION | |
---|---|---|---|
NAME | NO, | ||
VCC_OUT | 8, 11, 18, 21, 26, 29, 32 |
Power | 3.3-V Supply for the Output Buffers and Output Dividers |
VCC_AUXOUT | 15 | Power | 3.3-V to Power the AUX_OUT circuitry |
VCC1_PLL | 5 | A. Power | 3.3-V PLL Supply Voltage for the PLL circuitry. (Filter Required) |
VCC2_PLL | 39, 42 | A. Power | 3.3-V PLL Supply Voltage for the PLL circuitry. (Filter Required) |
VCC_VCO | 34, 35 | A. Power | 3.3-V VCO Input Buffer and Circuitry Supply Voltage. (Filter Required) |
VCC_IN_PRI | 47 | A. Power | 3.3-V References Input Buffer and Circuitry Supply Voltage. |
VCC_IN_SEC | 1 | A. Power | 3.3-V References Input Buffer and Circuitry Supply Voltage. |
VCC_AUXIN | 44 | A. Power | 3.3-V Crystal Oscillator Input Circuitry. |
GND_VCO | 36 | Ground | Ground that connects to VCO Ground. (VCO_GND is shorted to GND) |
GND | PAD | Ground | Ground is on Thermal PAD. See Layout recommendation |
SPI_MISO | 22 | O | 3-state LVCMOS Output that is enabled when SPI_LE is asserted low. It is the serial Data Output to the SPI bus interface |
SPI_LE | 25 | I | LVCMOS input, control Latch Enable for Serial Programmable Interface (SPI), with Hysteresis in SPI Mode. The input has an internal 150-kΩ pull-up resistor if left unconnected it will default to logic level 1. The SPI_LE status also impacts whether the device loads the EEPROM into the device registers at power up. SPI_LE has to be logic 1 before the Power_Down pin toggles low-to-high in order for the EEPROM to load properly. |
SPI_CLK | 24 | I | LVCMOS input, serial Control Clock Input for the SPI bus interface, with Hysteresis. The input has an internal 150-kΩ pull-up resistor if left unconnected it will default to logic level 1. |
SPI_MOSI | 23 | I | LVCMOS input, Master Out Slave In as a serial Control Data Input to CDCE62005 for the SPI bus interface. The input has an internal 150-kΩ pull-up resistor if left unconnected it will default to logic level 1. |
TEST_MODE | 33 | I | This pin should be tied high or left unconnected. |
REF_SEL | 31 | I | If Auto Reference Select Mode is OFF this Pin acts as External Input Reference Select Pin; The REF_SEL signal selects one of the two input clocks: REF_SEL [1]: PRI_REF is selected; REF_SEL [0]: SEC_REF is selected; The input has an internal 150-kΩ pull-up resistor if left unconnected it will default to logic level 1. If Auto Reference Select Mode in ON (for example, EECLKSEL bit -- Register 5 Bit 5 -- is 1 ), then REF_SEL pin input setting is ignored. |
Power_Down | 12 | I | Active Low. Power down mode can be activated via this pin. See Table 4 for more details. The input has an internal 150-kΩ pull-up resistor if left unconnected it will default to logic level 1. SPI_LE has to be HIGH in order for the rising edge of Power_Down signal to load the EEPROM. |
SYNC | 14 | I | Active Low. Sync mode can be activated via this pin. See Table 4 for more details. The input has an internal 150-kΩ, pull-up resistor if left unconnected it will default to logic level 1. |
AUX IN | 43 | I | Auxiliary Input is a single ended input including an on-board oscillator circuit so that a crystal may be connected. |
AUX OUT | 13 | O | Auxiliary Output LVCMOS level that can be programmed via SPI interface to be driven by Output 2 or Output 3. |
PRI_REF+ | 45 | I | Universal Input Buffer (LVPECL, LVDS, LVCMOS) positive input for the Primary Reference Clock. |
PRI_REF– | 46 | I | Universal Input Buffer (LVPECL, LVDS) negative input for the Primary Reference Clock. In case of LVCMOS input on PRI_REF+, connect this pin through 1-kΩ resistor to GND. |
SEC_REF+ | 3 | I | Universal Input Buffer (LVPECL, LVDS, LVCMOS) positive input for the Secondary Reference Clock. |
SEC_REF– | 2 | I | Universal Input Buffer (LVPECL, LVDS,) negative input for the Secondary Reference Clock. In case of LVCMOS input on SEC_REF+, connect this pin through 1-kΩ resistor to GND. |
TESTOUTA | 30 | Analog | Reserved. Pull Down to GND Via a 1-kΩ Resistor. |
REG_CAP1 | 4 | Analog | Capacitor for the internal Regulator. Connect to a 10-µF Capacitor (X5R or X7R) |
REG_CAP2 | 38 | Analog | Capacitor for the internal Regulator. Connect to a 10-µF Capacitor (X5R or X7R) |
VBB | 48 | Analog | Capacitor for the internal termination Voltage. Connect to a 1-µF Capacitor (X5R or X7R) |
EXT_LFP | 40 | Analog | External Loop Filter Input Positive |
EXT_LFN | 41 | Analog | External Loop Filter Input Negative. |
PLL_LOCK | 37 | O | Output that indicates PLL Lock Status. See Figure 31. |
U0P:U0N U1P:U1N U2P:U2N U3P:U3N U4P:U4N |
27, 28 19, 20 16,17 9, 10 6, 7 |
O | The Main outputs of CDCE62005 are user definable and can be any combination of up to 5 LVPECL outputs, 5 LVDS outputs or up to 10 LVCMOS outputs. The outputs are selectable via SPI interface. The power-up setting is EEPROM configurable. |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VCC | Supply voltage range(2) | –0.5 | 4.6 | V |
VI | Input voltage range(3) | –0.5 | VCC + 0.5 | V |
VO | Output voltage range(3) | –0.5 | VCC + 0.5 | V |
Input Current (VI < 0, VI > VCC) | ±20 | mA | ||
Output current for LVPECL/LVCMOS Outputs (0 < VO < VCC) | ±50 | mA | ||
TJ | Junction temperature | 125 | °C | |
Tstg | Storage temperature | –65 | 150 | °C |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | 2000 | V | |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | 750 |
THERMAL METRIC(1) | RGZ | UNIT | |
---|---|---|---|
48 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 28.9(5) | °C/W |
20.4(6) | |||
27.3(7) | |||
20.3(8) | |||
RθJC(top) | Junction-to-case (top) thermal resistance | 12.9 | °C/W |
RθJB | Junction-to-board thermal resistance | 4.0 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.2 | °C/W |
ψJB | Junction-to-board characterization parameter | 4.0 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 0.9 | °C/W |
θJP | Junction-to-pad(4) | 2(5) | °C/W |
2(6) | |||
2(7) | |||
2(8) |
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
POWER SUPPLY | ||||||||
VCC | Supply voltage | 3 | 3.3 | 3.6 | V | |||
VCC_PLL, VCC_IN, VCC_VCO, VCCA | Analog supply voltage | 3 | 3.3 | 3.6 | ||||
PLVPECL | REF at 30.72,MHz, Outputs are LVPECL | Output 1 = 491.52 MHz Output 2 = 245.76 MHz Output 3 = 122.88 MHz Output 4 = 61.44 MHz Output 5 = 30.72 MHz In case of LVCMOS Output1 = 245.76 MHz |
1.9 | W | ||||
PLVDS | REF at 30.72 MHz, Outputs are LVDS | 1.65 | W | |||||
PLVCMOS | REF at 30.72 MHz, Outputs are LVCMOS | 1.8 | W | |||||
POFF | REF at 30.72 MHz | Dividers are disabled. Outputs are disabled. | 0.75 | W | ||||
PPD | Device is powered down | 20 | mW | |||||
DIFFERENTIAL INPUT MODE (PRI_REF, SEC_REF) | ||||||||
VIN | Differential input amplitude (VIN – V/IN) | 0.1 | 1.3 | V | ||||
VIC | Common-mode input voltage | 1.0 | VCC–0.3 | V | ||||
IIH | Differential input current high (no internal termination) | VI = VCC, VCC = 3.6 V | 20 | μA | ||||
IIL | Differential input current low (no internal termination) | VI = 0 V, VCC = 3.6 V | –20 | 20 | μA | |||
Input Capacitance on PRI_REF, SEC_REF | 3 | pF | ||||||
CRYSTAL INPUT SPECIFICATIONS | ||||||||
On-chip load capacitance | 10 | pF | ||||||
Equivalent series resistance (ESR) | 50 | Ω | ||||||
LVCMOS INPUT MODE (SPI_CLK, SPI_MOSI, SPI_LE, Power_Down, SYNC, REF_SEL, PRI_REF, SEC_REF ) | ||||||||
Low-level input voltage LVCMOS, | 0 | 0.3 x VCC | V | |||||
High-level input voltage LVCMOS | 0.7 x VCC | VCC | V | |||||
VIK | LVCMOS input clamp voltage | VCC = 3 V, II = –18 mA | –1.2 | V | ||||
IIH | LVCMOS input current | VI = VCC, VCC = 3.6 V | 20 | μA | ||||
IIL | LVCMOS input (Except PRI_REF and SEC_REF) | VI = 0 V, VCC = 3.6 V | –10 | –40 | μA | |||
IIL | LVCMOS input (PRI_REF and SEC_REF) | VI = 0 V, VCC = 3.6 V | –10 | 10 | μA | |||
CI | Input capacitance | VI = 0 V or VCC | 3 | pF | ||||
SPI OUTPUT (MISO) / PLL_LOCK OUTPUT | ||||||||
IOH | High-level output current | VCC = 3.3 V, | VO = 1.65 V | –30 | mA | |||
IOL | Low-level output current | VCC = 3.3 V, | VO = 1.65 V | 33 | mA | |||
VOH | High-level output voltage for LVCMOS outputs | VCC = 3 V, | IOH = −100 μA | VCC–0.5 | V | |||
VOL | Low-level output voltage for LVCMOS outputs | VCC = 3 V, | IOL = 100 μA | 0.3 | V | |||
CO | Output capacitance on MISO | VCC = 3.3 V; VO = 0 V or VCC(1) | 3 | pF | ||||
IOZH | 3-state output current | VO = VCC
VO = 0 V |
5 | μA | ||||
IOZL | –5 | |||||||
EEPROM | ||||||||
EEcy | Programming cycle of EEPROM | 100 | 1000 | Cycles | ||||
EEret | Data retention | 10 | Years | |||||
VBB | ||||||||
VBB | Termination voltage for reference inputs. | IBB = –0.2 mA, Depending on the setting. | 0.9 | 1.9 | V | |||
INPUT BUFFERS INTERNAL TERMINATION RESISTORS (PRI_REF and SEC_REF) | ||||||||
Termination resistance | Single ended | 50 | Ω | |||||
PHASE DETECTOR | ||||||||
fCPmax | Charge pump frequency | 0.04 | 40 | MHz | ||||
LVCMOS OUTPUT / AUXILIARY OUTPUT(1) | ||||||||
fclk | Output frequency (see Figure 7) | Load = 5 pF to GND | 0 | 250 | MHz | |||
VOH | High-level output voltage for LVCMOS outputs | VCC = min to max | IOH = –100 μA | VCC –0.5 | ||||
VOL | Low-level output voltage for LVCMOS outputs | VCC = min to max | IOL =100 µA | 0.3 | V | |||
IOH | High-level output current | VCC = 3.3 V | VO = 1.65 V | –30 | mA | |||
IOL | Low-level output current | VCC = 3.3 V | VO = 1.65 V | 33 | mA | |||
tpho | Reference (PRI_REF or SEC_REF) to Output Phase offset | Outputs are set to 122.88 MHz, Reference at 30.72 MHz | 0.35 | ns | ||||
tpd(LH)/
tpd(HL) |
Propagation delay from PRI_REF or SEC_REF to Outputs | Crosspoint to VCC/2, Bypass Mode | 4 | ns | ||||
tsk(o) | Skew, output to output For Y0 to Y4 | All Outputs set at 200 MHz, Reference = 200 MHz | 75 | ps | ||||
CO | Output capacitance on Y0 to Y4 | VCC = 3.3 V; VO = 0 V or VCC | 5 | pF | ||||
IOZH | 3-State LVCMOS output current | VO = VCC | 5 | μA | ||||
IOZL | VO = 0 V | –5 | μA | |||||
IOPDH | Power Down output current | VO = VCC | 25 | μA | ||||
IOPDL | VO = 0 V | 5 | μA | |||||
Duty cycle LVCMOS | 45% | 55% | ||||||
tslew-rate | Output rise/fall slew rate | 3.6 | 5.2 | V/ns | ||||
LVDS OUTPUT(1)(3) | ||||||||
fclk | Output frequency (see Figure 8) | Configuration Load | 0 | 800 | MHz | |||
|VOD| | Differential output voltage | RL = 100 Ω | 270 | 550 | mV | |||
ΔVOD | LVDS VOD magnitude change | 50 | mV | |||||
Offset Voltage | 40°C to 85°C | 1.24 | V | |||||
ΔVOS | VOS magnitude change | 40 | mV | |||||
Short circuit Vout+ to ground | VOUT = 0 | 27 | mA | |||||
Short circuit Vout– to ground | VOUT = 0 | 27 | mA | |||||
tpho | Reference (PRI_REF or SEC_REF) to output phase offset | Outputs are set to 491.52 MHz Reference at 30.72 MHz |
1.65 | ns | ||||
tpd(LH)/tpd(HL) | Propagation delay from PRI_REF or SEC_REF to outputs | Crosspoint to Crosspoint, Bypass Mode | 3.1 | ns | ||||
tsk(o)(2) | Skew, output to output For Y0 to Y4 | All Outputs set at 200 MHz | 25 | ps | ||||
CO | Output capacitance on Y0 to Y4 | VCC = 3.3 V; VO = 0 V or VCC | 5 | pF | ||||
IOPDH | Power down output current | VO = VCC | 25 | μA | ||||
IOPDL | Power down output current | VO = 0 V | 5 | μA | ||||
Duty cycle | 45% | 55% | ||||||
tr / tf | Rise and fall time | 20% to 80% of VOUT(PP) | 110 | 160 | 190 | ps | ||
LVCMOS-TO-LVDS(4) | ||||||||
tskP_c | Output skew between LVCMOS and LVDS outputs | VCC/2 to Crosspoint. Output are at the same output frequency and use the same output divider configuration. | 0.9 | 1.4 | 1.9 | ns | ||
LVPECL OUTPUT | ||||||||
fclk | Output frequency, Configuration load (see Figure 9 and Figure 10) | 0 | 1500 | MHz | ||||
VOH | LVPECL high-level output voltage load | VCC –1.06 | VCC –0.88 | V | ||||
VOL | LVPECL low-level output voltage load | VCC–2.02 | VCC–1.58 | V | ||||
|VOD| | Differential output voltage | 610 | 970 | mV | ||||
tpho | Reference to Output Phase offset | Outputs are set to 491.52 MHz, Reference at 30.72 MHz | 1.47 | ns | ||||
tpd(LH)/ tpd(HL) |
Propagation delay from PRI_REF or SEC_REF to outputs | Crosspoint to Crosspoint, Bypass Mode | 3.4 | ns | ||||
tsk(o) | Skew, output to output For Y0 to Y4 | All Outputs set at 200 MHz | 25 | ps | ||||
CO | Output capacitance on Y0 to Y4 | VCC = 3.3 V; VO = 0 V or VCC | 5 | pF | ||||
IOPDH | Power Down output current | VO = VCC | 25 | μA | ||||
IOPDL | VO = 0 V | 5 | μA | |||||
Duty Cycle | 45% | 55% | ||||||
tr / tf | Rise and fall time | 20% to 80% of VOUT(PP) | 55 | 75 | 135 | ps | ||
LVDS-TO-LVPECL | ||||||||
tskP_C | Output skew between LVDS and LVPECL outputs | Crosspoint to Crosspoint output dividers are configured identically. | 0.9 | 1.1 | 1.3 | ns | ||
LVCMOS-TO-LVPECL | ||||||||
tskP_C | Output skew between LVCMOS and LVPECL outputs | VCC/2 to Crosspoint output dividers are configured identically. | –150 | 260 | 700 | ps | ||
LVPECL HI-SWING OUTPUT | ||||||||
VOH | LVPECL high-level output voltage load | VCC –1.11 | VCC –0.87 | V | ||||
VOL | LVPECL low-level output voltage load | VCC –2.06 | VCC –1.73 | V | ||||
|VOD| | Differential output voltage | 760 | 1160 | mV | ||||
tr / tf | Rise and fall time | 20% to 80% of VOUT(PP) | 55 | 75 | 135 | ps |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
fClock | Clock Frequency for the SPI_CLK | 20 | MHz | |||
t1 | SPI_LE to SPI_CLK setup time | See Figure 1 and Figure 2 | 10 | ns | ||
t2 | SPI_MOSI to SPI_CLK setup time | See Figure 1 and Figure 2 | 10 | ns | ||
t3 | SPI_MOSI to SPI_CLK hold time | See Figure 1 and Figure 2 | 10 | ns | ||
t4 | SPI_CLK high duration | See Figure 1 and Figure 2 | 25 | ns | ||
t5 | SPI_CLK low duration | See Figure 1 and Figure 2 | 25 | ns | ||
t6 | SPI_CLK to SPI_LE Hold time | See Figure 1 and Figure 2 | 10 | ns | ||
t7 | SPI_LE Pulse Width | See Figure 1 and Figure 2 | 20 | ns | ||
t8 | SPI_CLK to MISO data valid | See Figure 2 | 10 | ns | ||
t9 | SPI_LE to SPI_MISO Data Valid | See Figure 2 | 10 | ns |