SCAS945A June 2015 – September 2015 CDCEL824
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
VDD | Supply voltage range | –0.5 | 2.5 | V |
VI | Input voltage range(2) (3) | –0.5 | VDD + 0.5 | V |
VO | Output voltage range(2) | –0.5 | VDD + 0.5 | V |
II | Input current (VI < 0, VI > VDD) | 20 | mA | |
IO | Continuous output current | 50 | mA | |
TJ | Maximum junction temperature | 125 | °C | |
Tstg | Storage temperature range | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | ±1500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VDD | Device supply voltage | 1.7 | 1.8 | 1.9 | V |
VDDOUT | Output Yx supply voltage for CDCEL824 | 1.7 | 1.9 | V | |
VIL | Low-level input voltage LVCMOS | 0.3 VDD | V | ||
VIH | High-level input voltage LVCMOS | 0.7 VDD | V | ||
VI(thresh) | Input voltage threshold LVCMOS | 0.5 VDD | V | ||
VI(S) | Input voltage range S0 | 0 | 1.9 | V | |
Input voltage range S1, S2, SDA, SCL; V(Ithresh) = 0.5 VDD | 0 | 3.6 | |||
VI(CLK) | Input voltage range CLK | 0 | 1.9 | V | |
IOH /IOL | Output current (VDDOUT = 1.8 V) | ±8 | mA | ||
CL | Output load LVCMOS | 15 | pF | ||
TA | Operating free-air temperature | –40 | 85 | °C | |
RECOMMENDED CRYSTAL/VCXO SPECIFICATIONS(1) | |||||
fXtal | Crystal input frequency range (fundamental mode) | 10 | 30 | MHz | |
ESR | Effective series resistance | 100 | Ω | ||
fPR | Pulling range (0 V ≤ VCtrl ≤ 1.8 V)(2) | ±120 | ±150 | ppm | |
VCtrl | Frequency control voltage | 0 | VDD | V | |
C0/C1 | Pullability ratio | 220 | |||
CL | On-chip load capacitance at Xin and Xout | 0 | 20 | pF |
THERMAL METRIC(1)(2) | AIRFLOW (lfm) | CDCEL824 | UNIT | |
---|---|---|---|---|
PW (TSSOP) | ||||
30 PINS | ||||
RθJA | Junction-to-ambient thermal resistance | 0 | 101 | °C/W |
150 | 85 | °C/W | ||
200 | 84 | °C/W | ||
250 | 82 | °C/W | ||
500 | 74 | °C/W | ||
RθJC(top) | Junction-to-case (top) thermal resistance | 42 | °C/W | |
RθJB | Junction-to-board thermal resistance | 58 | °C/W | |
ψJB | Junction-to-board characterization parameter | 64 | °C/W | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 1.0 | °C/W |
TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | |||
---|---|---|---|---|---|---|---|
OVERALL PARAMETER | |||||||
IDD | Supply current (see Figure 1) | All outputs off, fCLK = 27 MHz, fVCO = 135 MHz; fOUT = 27 MHz |
All PLLS on | 20 | mA | ||
Per PLL | 9 | ||||||
IDDOUT | Supply current (see Figure 2) | No load, all outputs on, fOUT = 27 MHz |
VDDOUT = 1.8 V | 1 | mA | ||
IDDPD | Power-down current. Every circuit powered down except SDA/SCL | fIN = 0 MHz, | VDD = 1.9 V | 30 | μA | ||
VPUC | Supply voltage VDD threshold for power-up control circuit | 0.85 | 1.45 | V | |||
fVCO | VCO frequency range of PLL | 80 | 201 | MHz | |||
fOUT | LVCMOS output frequency | VDDOUT = 1.8 V | 201 | MHz | |||
LVCMOS PARAMETER | |||||||
VIK | LVCMOS input voltage | VDD = 1.7 V; IS = –18 mA | –1.2 | V | |||
II | LVCMOS input current | VI = 0 V or VDD; VDD = 1.9 V | ±5 | μA | |||
IIH | LVCMOS input current for S0/S1/S2 | VI = VDD; VDD = 1.9 V | 5 | μA | |||
IIL | LVCMOS Input current for S0/S1/S2 | VI = 0 V; VDD = 1.9 V | –4 | μA | |||
CI | Input capacitance at Xin/Clk | VIClk = 0 V or VDD | 6 | pF | |||
Input capacitance at Xout | VIXout = 0 V or VDD | 2 | |||||
Input capacitance at S0/S1/S2 | VIS = 0 V or VDD | 3 | |||||
LVCMOS PARAMETER for VDDOUT = 1.8 V – MODE | |||||||
VOH | LVCMOS high-level output voltage | VDDOUT = 1.7 V, IOH = –0.1 mA | 1.6 | V | |||
VDDOUT = 1.7 V, IOH = –4 mA | 1.4 | ||||||
VDDOUT = 1.7 V, IOH = –8 mA | 1.1 | ||||||
VOL | LVCMOS low-level output voltage | VDDOUT = 1.7 V, IOL = 0.1 mA | 0.1 | V | |||
VDDOUT = 1.7 V, IOL = 4 mA | 0.3 | ||||||
VDDOUT = 1.7 V, IOL = 8 mA | 0.6 | ||||||
tPLH, tPHL | Propagation delay | All PLL bypass | 2.6 | ns | |||
tr/tf | Rise and fall time | VDDOUT = 1.8 V (20%–80%) | 0.7 | ns | |||
tjit(cc) | Cycle-to-cycle jitter (2) (3) | 1 PLL switching, Y1-to-Y2 | 80 | 110 | ps | ||
2 PLL switching, Y1-to-Y4 | 130 | 200 | |||||
tjit(per) | Peak-to-peak period jitter (3) | 1 PLL switching, Y1-to-Y2 | 100 | 130 | ps | ||
2 PLL switching, Y1-to-Y4 | 150 | 220 | |||||
tsk(o) | Output skew(4) | fOUT = 50 MHz; Y1-to-Y2 | 50 | ps | |||
fOUT = 50 MHz; Y1-to-Y4 | 110 | ||||||
odc | Output duty cycle(5) | fVCO = 100 MHz; Pdiv = 1 | 45% | 55% | |||
SDA/SCL PARAMETER | |||||||
VIK | SCL and SDA input clamp voltage | VDD = 1.7 V; II = –18 mA | –1.2 | V | |||
IIH | SCL and SDA input current | VI = VDD; VDD = 1.9 V | ±10 | μA | |||
VIH | SDA/SCL input high voltage(6) | 0.7 VDD | V | ||||
VIL | SDA/SCL input low voltage(6) | 0.3 VDD | V | ||||
VOL | SDA low-level output voltage | IOL = 3 mA VDD = 1.7 V | 0.2 VDD | V | |||
CI | SCL/SDA Input capacitance | VI = 0 V or VDD | 3 | 10 | pF |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
fCLK | LVCMOS clock input frequency | PLL bypass mode | 0 | 130 | MHz | |
PLL mode | 8 | 130 | ||||
tr / tf | Rise and fall time CLK signal (20% to 80%) | 3 | ns | |||
dutyCLK | Duty cycle CLK at VDD / 2 | 40% | 60% |
(SeeFigure 5) | STANDARD MODE | FAST MODE | UNIT | |||
---|---|---|---|---|---|---|
MIN | MAX | MIN | MAX | |||
fSCL | SCL clock frequency | 0 | 100 | 0 | 400 | kHz |
tsu(START) | START setup time (SCL high before SDA low) | 4.7 | 0.6 | μs | ||
th(START) | START hold time (SCL low after SDA low) | 4 | 0.6 | μs | ||
tw(SCLL) | SCL low-pulse duration | 4.7 | 1.3 | μs | ||
tw(SCLH) | SCL high-pulse duration | 4 | 0.6 | μs | ||
th(SDA) | SDA hold time (SDA valid after SCL low) | 0 | 3.45 | 0 | 0.9 | μs |
tsu(SDA) | SDA setup time | 250 | 100 | ns | ||
tr | SCL/SDA input rise time | 1000 | 300 | ns | ||
tf | SCL/SDA input fall time | 300 | 300 | ns | ||
tsu(STOP) | STOP setup time | 4 | 0.6 | μs | ||
tBUS | Bus free time between a STOP and START condition | 4.7 | 1.3 | μs |
MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|
EEcyc | Programming cycles of EEPROM | 100 | 1000 | cycles | |
EEret | Data retention | 10 | years |