JAJSDY3F July   2017  – January 2024 CDCI6214

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  EEPROM Characteristics
    6. 6.6  Reference Input, Single-Ended and Differential Mode Characteristics (REFP, REFN, FB_P, FB_N)
    7. 6.7  Reference Input, Crystal Mode Characteristics (XIN, XOUT)
    8. 6.8  General-Purpose Input and Output Characteristics (GPIO[4:1], SYNC/RESETN)
    9. 6.9  Triple Level Input Characteristics (EEPROMSEL, REFSEL)
    10. 6.10 Reference Mux Characteristics
    11. 6.11 Phase-Locked Loop Characteristics
    12. 6.12 Closed-Loop Output Jitter Characteristics
    13. 6.13 Output Mux Characteristics
    14. 6.14 LVCMOS Output Characteristics
    15. 6.15 HCSL Output Characteristics
    16. 6.16 LVDS DC-Coupled Output Characteristics
    17. 6.17 Programmable Differential AC-Coupled Output Characteristics
    18. 6.18 Output Skew and Delay Characteristics
    19. 6.19 Output Synchronization Characteristics
    20. 6.20 Timing Characteristics
    21. 6.21 I2C-Compatible Serial Interface Characteristics (SDA/GPIO2, SCL/GPIO3)
    22. 6.22 Timing Requirements, I2C-Compatible Serial Interface (SDA/GPIO2, SCL/GPIO3)
    23. 6.23 Power Supply Characteristics
    24. 6.24 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Parameters
      1. 7.1.1 Reference Inputs
      2. 7.1.2 Outputs
      3. 7.1.3 Serial Interface
      4. 7.1.4 Power Supply
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Reference Block
        1. 8.3.1.1 Input Stages
          1. 8.3.1.1.1 Crystal Oscillator
          2. 8.3.1.1.2 LVCMOS
          3. 8.3.1.1.3 Differential AC-Coupled
        2. 8.3.1.2 Reference Mux
        3. 8.3.1.3 Reference Divider
          1. 8.3.1.3.1 Doubler
        4. 8.3.1.4 Bypass-Mux
        5. 8.3.1.5 Zero Delay, Internal and External Path
      2. 8.3.2 Phase-Locked Loop
      3. 8.3.3 Clock Distribution
        1. 8.3.3.1 Output Channel
        2. 8.3.3.2 Divider Glitch-Less Update
      4. 8.3.4 Control Pins
        1. 8.3.4.1 Global and Individual Output Enable: OE and OE_Y[4:1]
      5. 8.3.5 Operation Modes
      6. 8.3.6 Divider Synchronization - SYNC
      7. 8.3.7 EEPROM - Cyclic Redundancy Check
      8. 8.3.8 Power Supplies
        1. 8.3.8.1 Power Management
    4. 8.4 Device Functional Modes
      1. 8.4.1 Pin Mode
      2. 8.4.2 Serial Interface Mode
        1. 8.4.2.1 Fall-Back Mode
    5. 8.5 Programming
      1. 8.5.1 Recommended Programming Procedure
      2. 8.5.2 EEPROM Access
      3. 8.5.3 Device Defaults
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Do's and Don'ts
    4. 9.4 Initialization Setup
    5. 9.5 Power Supply Recommendations
      1. 9.5.1 Power-Up Sequence
      2. 9.5.2 De-Coupling
    6. 9.6 Layout
      1. 9.6.1 Layout Guidelines
      2. 9.6.2 Layout Examples
  11. 10Register Maps
    1. 10.1 CDCI6214 Registers
    2. 10.2 EEPROM Map
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
      2. 11.1.2 Device Nomenclature
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 サポート・リソース
    4. 11.4 Trademarks
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 用語集
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • RGE|24
サーマルパッド・メカニカル・データ
発注情報

8.5.2 EEPROM Access

Note:

The EEPROM word write access time is typically 8 ms. The EEPROM_BUSY signal indicates when the EEPROM is busy and can be observed as a status signal on a GPIO pin to optimally time the writes (for example, in gpio4_output_sel).

There are two methods to write into the internal EEPROM:

  1. Register Commit
  2. EEPROM Direct Access

Use the following steps to bring the device into a known state and be able to conduct the programming:

  1. Power down all device supplies
  2. Apply RESETN=LOW.
  3. Apply REFSEL=MID (leave tri-stated).
  4. Apply EEPROMSEL=MID (leave tri-stated).
  5. Apply 1.8 V/2.5 V/3.3 V to all device supplies. When device operation is not required, only apply 1.8 V/2.5V/3.3 V to VDDREF.
  6. Apply RESETN=HIGH.
  7. Use the I2C interface to configure the device using target address 0x74. See Table 8-12 for more details.

In the Register Commit flow all bits from the device registers are copied into the EEPROM. The recommended flow is:

  1. Pre-configure the device as desired, except the serial interface using mode.
  2. Write 1 to recal to calibrate the VCO in this operation mode.
  3. Select the EEPROM page, to copy the register settings into, using regcommit_page.
  4. Unlock the EEPROM for write access with ee_lock = 0x5
  5. Start the commit operation by writing a 1 to regcommit
  6. Force a CRC update by writing a 1 to update_crc.
  7. Read back the calculated CRC in nvmlcrc.
  8. Store the read CRC value in the EEPROM by writing 0x3F to nvm_wr_addr and then the CRC value to nvm_wr_data.

In the EEPROM Direct Access flow the EEPROM words are directly accessed using the address and the data bit-fields. The recommended flow is:

  1. Prepare an EEPROM image consisting of 64 words.
  2. Unlock the EEPROM for write access with ee_lock = 0x5
  3. Write the initial address offset to the address bit-field. Write a 0x00 to nvm_wr_addr.
  4. Loop through the EEPROM image from address 0 to 63 by writing each word from the image to nvm_wr_data. The EEPROM word address is automatically incremented by every write access to nvm_wr_data.
  5. The EEPROM read is similar to EEPROM write. First write 0x00 to nvm_rd_addr, then loop through all bytes by reading from nvm_rd_data. The EEPROM word address is automatically incremented by every write access to nvm_rd_data.

GUID-BE9D1005-28AF-4D16-B32D-13714829E53C-low.gifFigure 8-12 EEPROM Direct Access Using I2C