SCAS643I September   2000  – October  2017 CDCV304

PRODUCTION DATA.  

  1. 1Features
  2. 2Description
  3. 3Revision History
  4. 4Pin Configuration and Functions
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Electrical Characteristics
    5. 5.5 Timing Requirements
    6. 5.6 Switching Characteristics: VDD = 2.5 V ± 10%
    7. 5.7 Switching Characteristics: VDD = 3.3 V ± 10%
    8. 5.8 Typical Characteristics
  6. 6Parameter Measurement Information
  7. 7Detailed Description
    1. 7.1 Functional Block Diagram
    2. 7.2 Device Functional Modes
  8. 8Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Community Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  9. 9Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Supply voltage range, VDD –0.5 4.3 V
Input voltage range, VI (2) (3) –0.5 VDD + 0.5 V
Output voltage range, VO (2) (3) –0.5 VDD + 0.5 V
Input clamp current, IIK (VI < 0 or VI> VDD) –50 50 mA
Output clamp current, IOK (VO < 0 or VO > VDD) –50 50 mA
Continuous total output current, IO (VO = 0 to VDD) –50 50 mA
Package thermal impedance, θJA: PW package 230.5 °C/W
Junction temperature, Tj, max 125 °C
Storage temperature range Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input and output negative voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(3) This value is limited to 4.6 V maximum.

5.2 Recommended Operating Conditions

MIN NOM MAX UNIT
Supply voltage, VDD 2.3 3.6 V
Low-level input voltage, VIL 0.3 x VDD V
High-level input voltage, VIH 0.7 x VDD V
Input voltage, VI 0 VDD V
High-level output current, IOH VDD = 2.5 V –12 mA
VDD = 3.3 V –24
Low-level output current, IOL VDD = 2.5 V 12 mA
VDD = 3.3 V 24
Operating free-air temperature, TA –40 85 °C

5.3 Thermal Information

THERMAL METRIC(1) THERMAL AIR FLOW (CFM) CDCV304 UNIT
PW (TSSOP)
8 PINS
RθJA Junction-to-ambient thermal resistance High K 0 149 °C/W
150 142
250 138
500 132
Low K 230
185
170
150
RθJC(top) Junction-to-case (top) thermal resistance 43.7
RθJB Junction-to-board thermal resistance 102
ψJT Junction-to-top characterization parameter 1.8
ψJB Junction-to-board characterization parameter 100.2
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

5.4 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VIK Input voltage VDD = 3 V, II = –18 mA –1.2 V
VOH High-level output voltage VDD = 2.3 V, IOH = –8 mA 1.8 V
VDD = 2.3 V, IOH = –16 mA 1.5
VDD = min to max, IOH = –1 mA VDD – 0.2
VDD = 3 V, IOH = –24 mA 2
VDD = 3 V, IOH = –12 mA 2.4
VOL Low-level output voltage VDD = 2.3 V, IOL = 8 mA 0.5 V
VDD = 2.3 V, IOL = 16 mA 0.7
VDD = min to max, IOL = 1 mA 0.2
VDD = 3 V, IOL = 24 mA 0.8
VDD = 3 V, IOL = 12 mA 0.55
IOH High-level output current VDD = 3 V, VO = 1 V –50 mA
VDD = 3.3 V, VO = 1.65 V –55
IOL Low-level output current VDD = 3 V, VO = 2 V 60 mA
VDD = 3.3 V, VO = 1.65 V 70
II Input current VI = VO or VDD ±5 μA
IDD Dynamic current, see Figure 1 f = 67 MHz, VDD = 2.7 V 28 mA
f = 67 MHz, VDD = 3.6 V 37
CI Input capacitance VDD = 3.3 V, VI = 0 V or VDD 3 pF
CO Output capacitance VDD = 3.3 V, VI = 0 V or VDD 3.2 pF
(1) All typical values are with respect to nominal VDD and TA = 25°C.

5.5 Timing Requirements

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fclk Clock frequency 0 200 MHz

5.6 Switching Characteristics: VDD = 2.5 V ± 10%

VDD = 2.5 V ± 10%, CL= 10 pF (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
tPLH Low-to-high propagation delay See Figure 4 and Figure 5 2 2.9 4.5 ns
tPHL High-to-low propagation delay 2 3 4.5
tsk(o) Output skew(2) See Figure 6 50 150 ps
tr Output rise slew rate 1.5 2.2 4 V/ns
tf Output fall slew rate 1.5 2.2 4 V/ns
(1) All typical values are with respect to nominal VDD.
(2) The tsk(o) specification is only valid for equal loading of all outputs.

5.7 Switching Characteristics: VDD = 3.3 V ± 10%

VDD = 3.3 V ± 10%, CL= 10 pF (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
tPLH Low-to-high propagation delay See Figure 4 and Figure 5 1.8 2.4 3 ns
tPHL High-to-low propagation delay 1.8 2.5 3
tsk(o) Output skew(3) 50 100 ps
tjitter Additive phase jitter from input to output 1Y0 12 kHz to 5 MHz, fout = 30.72 MHz 63 fs rms
12 kHz to 20 MHz, fout = 125 MHz 56
tsk(p) Pulse skew VIH = VDD, VIL = 0 V 150 ps
tsk(pr) Process skew 0.2 0.3 ns
tsk(pp) Part-to-part skew 0.25 0.4 ns
thigh Clock high time, see Figure 7 66 MHz 6 ns
140 MHz 3
tlow Clock low time, see Figure 7 66 MHz 6 ns
140 MHz 3
tr Output rise slew rate(2) VO = 0.4 V to 2 V 1.5 2.7 4 V/ns
tf Output fall slew rate(2) VO = 2 V to 0.4 V 1.5 2.7 4 V/ns
(1) All typical values are with respect to nominal VDD.
(2) This symbol is according to PCI-X terminology.
(3) The tsk(o) specification is only valid for equal loading of all outputs.

5.8 Typical Characteristics

CDCV304 icc_f_cas643.gif Figure 1. Supply Current vs Frequency
CDCV304 vol_iol_cas643.gif Figure 3. Low-Level Output Voltage vs Low-Level Output Current
CDCV304 voh_ioh_cas643.gif Figure 2. High-Level Output Voltage vs High-Level Output Current