SLPS306A May   2012  – September 2015 CSD13201W10

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD13201W10 Package Dimensions
    2. 7.2 Land Pattern Recommendation
    3. 7.3 Tape and Reel Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 12 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 9.6 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 8 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 0.65 0.8 1.1 V
RDS(on) Drain-to-source on resistance VGS = 1.8 V, ID = 1 A 38 53 mΩ
VGS = 2.5 V, ID = 1 A 29 39
VGS = 4.5 V, ID = 1 A 26 34
gfs Transconductance VDS = 6 V, ID = 1 A 23 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0 V, VDS = 6 V, ƒ = 1 MHz 385 462 pF
COSS Output capacitance 245 294 pF
CRSS Reverse transfer capacitance 18.1 22.6 pF
Rg Series gate resistance 3 Ω
Qg Gate charge total (4.5 V) VDS = 6 V, ID = 1 A 2.3 2.9 nC
Qgd Gate charge gate-to-drain 0.3 nC
Qgs Gate charge gate-to-source 0.5 nC
Qg(th) Gate charge at Vth 0.3 nC
QOSS Output charge VDS = 6.0 V, VGS = 0 V 1.8 nC
td(on) Turn on delay time VDS = 6 V, VGS = 4.5 V, ID = 1 A
RG = 20 Ω		 3.9 ns
tr Rise time 5.9 ns
td(off) Turn off delay time 14.4 ns
tf Fall time 9.7 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IS = 1 A, VGS = 0 V 0.7 1 V
Qrr Reverse recovery charge VDS= 6 V, IS = 1 A, di/dt = 100 A/μs 2.4 nC
trr Reverse recovery time 11.5 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJA Thermal resistance junction-to-ambient (minimum Cu area) 228.6 °C/W
RθJA Thermal resistance junction-to-ambient (1 in2 Cu area) 131.1 °C/W
CSD13201W10 M0149-01_LPS209.png
Max RθJA = 131.1°C/W when mounted on 1 inch2 of 2 oz. Cu.
CSD13201W10 M0150-01_LPS209.png
Max RθJA = 228.6°C/W when mounted on minimum pad area of 2 oz. Cu.

5.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise noted)
CSD13201W10 graph01_LPS.png
Figure 1. Transient Thermal Impedance
CSD13201W10 graph02_LPS.png
Figure 2. Saturation Characteristics
CSD13201W10 graph04_new2.png
Figure 4. Gate Charge
CSD13201W10 graph06_LPS.png
Figure 6. Threshold Voltage vs Temperature
CSD13201W10 graph08_LPS.png
Figure 8. On Resistance vs Temperature
CSD13201W10 graph10_LPS.png
Figure 10. Maximum Safe Operating Area
CSD13201W10 graph03_LPS.png
Figure 3. Transfer Characteristics
CSD13201W10 graph05_LPS.png
Figure 5. Capacitance
CSD13201W10 graph07_new.png
Figure 7. On Resistance vs Gate Voltage
CSD13201W10 graph09_LPS.png
Figure 9. Typical Diode Forward Voltage
CSD13201W10 graph12_LPS.png
Figure 11. Maximum Drain Current vs Temperature