CSD13302W 12 V N Channel NexFET Power MOSFET
- SLPS535 March 2015 CSD13302W
  
  PRODUCTION DATA.

CSD13302W 12 V N Channel NexFET Power MOSFET

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DATA SHEET

CSD13302W 12 V N Channel NexFET Power MOSFET

1 Features

Ultra Low On Resistance
Low Q_g and Q_gd
Small Footprint 1 mm × 1 mm
Low Profile 0.62 mm Height
Pb Free
RoHS Compliant
Halogen Free

2 Applications

Battery Management
Load Switch
Battery Protection

3 Description

This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 x 1 mm outline with excellent thermal characteristics and an ultra low profile.

Top View

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	12		V
Q_g	Gate Charge Total (4.5 V)	6.0		nC
Q_gd	Gate Charge Gate-to-Drain	2.1		nC
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 2.5 V	21.2	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 4.5 V	14.6	mΩ
V_GS(th)	Threshold Voltage	1.0		V

Ordering Information⁽¹⁾

Device	Qty	Media	Package	Ship
CSD13302W	3000	7-Inch Reel	1.0 mm × 1.0 mm Wafer Level Package	Tape and Reel
CSD13302WT	250	7-Inch Reel	1.0 mm × 1.0 mm Wafer Level Package	Tape and Reel

For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	12	V
V_GS	Gate-to-Source Voltage	±10	V
I_D	Continuous Drain Current ⁽¹⁾	1.6	A
I_DM	Pulsed Drain Current ⁽²⁾	29	A
P_D	Power Dissipation ⁽³⁾	1.8	W
T_J, T_stg	Operating Junction and Storage Temperature Range	–55 to 150	°C

Device Operating at a temperature of 105ºC
Min Cu Typ R_θJA = 275ºC/W, Pulse width ≤100 μs, duty cycle ≤1%
Max Cu Typ R_θJA = 70ºC/W

R_DS(on) vs V_GS

Gate Charge

4 Revision History

DATE	REVISION	NOTES
March 2015	*	Initial release.

5 Specifications

Electrical Characteristics

(T_A = 25°C)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 , I_D = 250 μA	12			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = 9.6 V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = 10 V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250 μA	0.7	1.0	1.3	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 2.5 V, I_D = 1 A		21.2	25.8	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 4.5 V, I_D = 1 A		14.6	17.1	mΩ
g_ƒs	Transconductance	V_DS = 1.2 V, I_D = 1 A		10		S
DYNAMIC CHARACTERISTICS
C_ISS	Input Capacitance	V_GS = 0 V, V_DS = 6 V, ƒ = 1 MHz		663	862	pF
C_OSS	Output Capacitance			211	274	pF
C_RSS	Reverse Transfer Capacitance			151	196	pF
R_g	Series Gate Resistance			3.6	7.2	Ω
Q_g	Gate Charge Total (4.5 V)	V_DS = 6 V, I_D = 1 A		6.0	7.8	nC
Q_gd	Gate Charge Gate-to-Drain			2.1		nC
Q_gs	Gate Charge Gate-to-Source			0.7		nC
Q_g(th)	Gate Charge at Vth			0.7		nC
Q_OSS	Output Charge	V_DS = 6 V, V_GS = 0 V		1.3		nC
t_d(on)	Turn On Delay Time	V_DS = 6 V, V_GS = 4.5 V, I_D = 1 A R_G = 0 Ω		6		ns
t_r	Rise Time			7		ns
t_d(off)	Turn Off Delay Time			17		ns
t_ƒ	Fall Time			7		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_S = 1 A, V_GS = 0 V		0.7	1.0	V
Q_rr	Reverse Recovery Charge	V_DS= 6 V, I_S = 1 A, di/dt = 200 A/μs		11.6		nC
t_rr	Reverse Recovery Time	V_DS= 6 V, I_S = 1 A, di/dt = 200 A/μs		19.6		ns

5.1 Thermal Information

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJA	Junction-to-Ambient Thermal Resistance⁽¹⁾		275		°C/W
R_θJA	Junction-to-Ambient Thermal Resistance⁽²⁾		70		°C/W

(1) Device mounted on FR4 material with minimum Cu mounting area.

(2) Device mounted on FR4 material with 1 inch² (6.45 cm²), 2 oz. (0.071 mm thick) Cu.

Typical R_θJA = 70°C/W when mounted on
1 inch² of 2 oz. Cu.

Typical R_θJA = 275°C/W when mounted on minimum pad area of 2 oz. Cu.

5.2 Typical MOSFET Characteristics

(T_A = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

I_D = 1 A	V_DS = 6 V

Figure 4. Gate Charge

	I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = 1 A

Figure 8. Normalized On-State Resistance vs Temperature

	Single Pulse, Max R_θJA = 275°C/W

Figure 10. Maximum Safe Operating Area

	V_DS = 5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Maximum Drain Current vs Temperature

6 Device and Documentation Support

6.1 Trademarks

All other trademarks are the property of their respective owners.

6.2 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

6.3 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.