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This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 x 1.5 mm outline with excellent thermal characteristics and an ultra low profile.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 12 | V | |
Qg | Gate Charge Total (4.5 V) | 8.6 | nC | |
Qgd | Gate Charge Gate-to-Drain | 3.0 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 2.5 V | 12.9 | mΩ |
VGS = 4.5 V | 8.8 | mΩ | ||
VGS(th) | Voltage Threshold | 1.0 | V |
Device | Qty | Media | Package | Ship |
---|---|---|---|---|
CSD13306W | 3000 | 7-Inch Reel | 1.0 mm × 1.5 mm Wafer Level Package | Tape and Reel |
CSD13306WT | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 12 | V |
VGS | Gate-to-Source Voltage | ±10 | V |
ID | Continuous Drain Current(1) | 3.5 | A |
IDM | Pulsed Drain Current (2) | 44 | A |
PD | Power Dissipation(3) | 1.9 | W |
Tstg | Storage Temperature Range | –55 to 150 | °C |
TJ | Operating Junction Temperature Range |
RDS(on) vs VGS![]() |
Gate Charge![]() |
DATE | REVISION | NOTES |
---|---|---|
March 2015 | * | Initial release. |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | 12 | V | |||
IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = 9.6 V | 1 | μA | |||
IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = 10 V | 100 | nA | |||
VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250 μA | 0.7 | 1.0 | 1.3 | V | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 2.5 V, ID = 1.5 A | 12.9 | 15.5 | mΩ | ||
VGS = 4.5 V, ID = 1.5 A | 8.8 | 10.2 | mΩ | ||||
gƒs | Transconductance | VDS = 1.2 V, ID =1.5 A | 15 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
CISS | Input Capacitance | VGS = 0 V, VDS = 6 V, ƒ = 1 MHz | 1050 | 1370 | pF | ||
COSS | Output Capacitance | 324 | 421 | pF | |||
CRSS | Reverse Transfer Capacitance | 226 | 294 | pF | |||
Rg | 4.2 | 8.4 | Ω | ||||
Qg | Gate Charge Total (4.5V) | VDS = 6 V, ID = 1.5 A | 8.6 | 11.2 | nC | ||
Qgd | Gate Charge Gate-to-Drain | 3.0 | nC | ||||
Qgs | Gate Charge Gate-to-Source | 1.1 | nC | ||||
Qg(th) | Gate Charge at Vth | 1.2 | nC | ||||
QOSS | Output Charge | VDS = 6 V, VGS = 0 V | 3.3 | nC | |||
td(on) | Turn On Delay Time | VDS = 6 V, VGS = 4.5 V, ID = 1.5 A RG = 4 Ω |
7 | ns | |||
tr | Rise Time | 11 | ns | ||||
td(off) | Turn Off Delay Time | 20 | ns | ||||
tƒ | Fall Time | 8 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode Forward Voltage | IS = 1.5 A, VGS = 0 V | 0.7 | 1.0 | V | ||
Qrr | Reverse Recovery Charge | VDS= 6 V, IF = 1.5 A, di/dt = 200 A/μs | 14.8 | nC | |||
trr | Reverse Recovery Time | 23 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJA | Junction-to-Ambient Thermal Resistance (1) | 230 | °C/W | ||
Junction-to-Ambient Thermal Resistance (2) | 65 |
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Typ RθJA = 65°C/W when mounted on 1 inch2 of 2 oz. Cu. |
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Typ RθJA = 230°C/W when mounted on minimum pad area of 2 oz. Cu. |
ID = 1.5 A | VDS = 6 V | |
ID = 250 µA | ||
ID = 1.5 A | ||
Single Pulse, Max RθJA = 230°C/W | ||
VDS = 5 V | ||
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.