JAJSCK8B October   2016  – February 2022 CSD13385F5

PRODUCTION DATA  

  1. 1特長
  2. 2アプリケーション
  3. 3概要
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)

GUID-7DF6B796-3F8F-403D-B7A1-EB7C12D00EA8-low.gifFigure 5-1 Saturation Characteristics
GUID-87FD39C3-4106-42A2-B124-7611AE8C2EE3-low.pngFigure 5-3 Transient Thermal Impedance
GUID-7213D500-854B-4194-8EFE-2166A2BB8CE6-low.gif
VDS = 5 V
Figure 5-2 Transfer Characteristics
GUID-4AC8C9E3-16B3-4F96-BBAF-14CC6BD82F3A-low.gif
ID = 0.9 AVDS = 6 V
Figure 5-4 Gate Charge
GUID-C09A21DD-1929-412D-80DC-A8AB9C2ECC70-low.gif
ID = 250 µA
Figure 5-6 Threshold Voltage vs Temperature
GUID-E0752113-A6BC-4260-A886-41DBBB2603C8-low.gif
ID = 0.9 A
Figure 5-8 Normalized On-State Resistance vs Temperature
GUID-57CBF9A4-E026-4081-8063-0AAAF3CB8AE6-low.gif
Single pulse, typical RθJA = 290°C/W
Figure 5-10 Maximum Safe Operating Area (SOA)
GUID-7D2AB0EE-0AE7-45B8-AE3C-8A12E1B78823-low.gif
Typical RθJA = 245°C/W
Figure 5-12 Maximum Drain Current vs Temperature
GUID-1B2E7AF4-B148-4525-A3D7-F869E79EB67F-low.gifFigure 5-5 Capacitance
GUID-6EBDF446-6EB5-48EF-A151-97AA8E2AABE2-low.gifFigure 5-7 On-State Resistance vs Gate-to-Source Voltage
GUID-7E4629CB-523C-41A5-A084-8D15D45EF7D2-low.gifFigure 5-9 Typical Diode Forward Voltage
GUID-CD066942-CC9D-427C-A8A9-C2ACA3D03847-low.gifFigure 5-11 Single Pulse Unclamped Inductive Switching