JAJSTX0E October   2009  – November 2024 CSD16301Q2

PRODUCTION DATA  

  1.   1
  2. 1特長
  3. 2アプリケーション
  4. 3概要
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 ドキュメントの更新通知を受け取る方法
    2. 5.2 サポート・リソース
    3. 5.3 Trademarks
    4. 5.4 静電気放電に関する注意事項
    5. 5.5 用語集
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

パッケージ・オプション

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メカニカル・データ（パッケージ｜ピン）
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サーマルパッド・メカニカル・データ
発注情報

4.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise specified)

CSD16301Q2 Transient Thermal Impedance
Figure 4-1 Transient Thermal Impedance
CSD16301Q2 Saturation Characteristics
Figure 4-2 Saturation Characteristics
CSD16301Q2 Gate Charge
ID = 4AVDS = 50V
Figure 4-4 Gate Charge
CSD16301Q2 Threshold Voltage vs Temperature
ID = 250µA
Figure 4-6 Threshold Voltage vs Temperature
CSD16301Q2 Normalized On-State Resistance vs Temperature
VGS = 4.5VID = 4A
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD16301Q2 Maximum Safe Operating Area
Single pulse, max RθJC = 8.4°C/W
Figure 4-10 Maximum Safe Operating Area
CSD16301Q2 Maximum Drain Current vs Temperature
Figure 4-12 Maximum Drain Current vs Temperature
CSD16301Q2 Transfer Characteristics
VDS = 5V
Figure 4-3 Transfer Characteristics
CSD16301Q2 Capacitance
Figure 4-5 Capacitance
CSD16301Q2 On-State Resistance vs Gate-to-Source Voltage
Figure 4-7 On-State Resistance vs Gate-to-Source Voltage
CSD16301Q2 Typical Diode Forward Voltage
Figure 4-9 Typical Diode Forward Voltage
CSD16301Q2 Single Pulse Unclamped Inductive Switching
Figure 4-11 Single Pulse Unclamped Inductive Switching