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This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 25 | V | |
Qg | Gate Charge Total (4.5 V) | 6.2 | nC | |
Qgd | Gate Charge Gate-to-Drain | 1.1 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = 3 V | 5.4 | mΩ |
VGS = 4.5 V | 4.4 | |||
VGS = 8 V | 3.8 | |||
Vth | Threshold Voltage | 1.1 | V |
DEVICE | MEDIA | QTY | PACKAGE | SHIP |
---|---|---|---|---|
CSD16323Q3 | 13-Inch Reel | 2500 | SON 3.30-mm × 3.30-mm Plastic Package |
Tape and Reel |
CSD16323Q3T | 7-Inch Reel | 250 |
TA = 25°C (unless otherwise stated) | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 25 | V |
VGS | Gate-to-Source Voltage | +10 / –8 | V |
ID | Continuous Drain Current (Package Limit) | 60 | A |
Continuous Drain Current (Silicon Limited), TC = 25°C | 105 | ||
Continuous Drain Current(1) | 20 | ||
IDM | Pulsed Drain Current(2) | 240 | A |
PD | Power Dissipation(1) | 2.8 | W |
Power Dissipation, TC = 25°C | 74 | ||
TJ, Tstg |
Operating Junction, Storage Temperature |
–55 to 150 | °C |
EAS | Avalanche Energy, Single Pulse ID = 50 A, L = 0.1 mH, RG = 25 Ω |
125 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |
Changes from B Revision (June 2011) to C Revision
Changes from A Revision (April 2010) to B Revision
Changes from * Revision (August 2009) to A Revision
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-case thermal resistance(1) | 1.7 | °C/W | ||
RθJA | Junction-to-ambient thermal resistance(1)(2) | 55 | °C/W |
![]() |
Max RθJA = 55°C/W when mounted on 1 in2 of 2-oz Cu. |
![]() |
Max RθJA = 160°C/W when mounted on minimum pad area of 2-oz Cu. |
ID = 24 A | VDS = 12.5 V |
ID = 250 µA |
ID = 24 A | VGS = 4.5 V |
VDS = 5 V |
f = 1 MHz | VGS = 0 V |
ID = 24 A |
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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