JAJSRO0B October   2009  – October 2023 CSD16408Q5

PRODUCTION DATA  

  1.   1
  2. 1特長
  3. 2アプリケーション
  4. 3概要
  5. 4Revision History
  6. 5Electrical Characteristics
  7. 6Thermal Characteristics
  8. 7Typical MOSFET Characteristics
  9. 8Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • DQH|8
サーマルパッド・メカニカル・データ
発注情報

Electrical Characteristics

TA = 25°C unless otherwise stated
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Static Characteristics
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 25 V
IDSS Drain-to-source leakage VGS = 0 V, VDS = 20 V 1 μA
IGSS Gate-to-source leakage VDS = 0 V, VGS = –12 V to 16 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.4 1.8 2.1 V
rDS(on) Drain-to-source on-resistance VGS = 4.5 V, ID = 25 A 5.4 6.8 mΩ
VGS = 10 V, ID = 25 A 3.6 4.5 mΩ
gfs Transconductance VDS = 15 V, ID = 25 A 60 S
Dynamic Characteristics
CISS Input capacitance VGS = 0 V, VDS = 12.5 V , ƒ = 1 MHz 990 1300 pF
COSS Output capacitance 760 1000 pF
CRSS Reverse transfer capacitance 75 100 pF
Rg Series gate resistance 0.8 1.6
Qg Gate charge total (4.5 V) VDS = 12.5 V, ID = 25 A 6.7 8.9 nC
Qgd Gate charge, gate-to-drain 1.9 nC
Qgs Gate charge, gate-to-source 3.1 nC
Qg(th) Gate charge at Vth 1.8 nC
QOSS Output charge VDS = 13 V, VGS = 0 V 15.7 nC
td(on) Turnon delay time VDS = 12.5 V, VGS = 4.5 V,
ID = 20 A, RG = 2 Ω
11.3 ns
tr Rise time 25 ns
td(off) Turnoff delay time 11 ns
tf Fall time 10.8 ns
Diode Characteristics
VSD Diode forward voltage IS = 25 A, VGS = 0 V 0.8 1 V
Qrr Reverse recovery charge VDD = 13 V, IF = 2 5A, di/dt = 300 A/μs 17 nC
trr Reverse recovery time VDD = 13 V, IF = 25 A, di/dt = 300 A/μs 21 ns