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  • CSD16411Q3 25-V N-Channel NexFET™ Power MOSFET

    • SLPS206B August   2009  – November 2016 CSD16411Q3

      PRODUCTION DATA.  

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  • CSD16411Q3 25-V N-Channel NexFET™ Power MOSFET
  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q3 Tape and Reel Information
  8. IMPORTANT NOTICE

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DATA SHEET

CSD16411Q3 25-V N-Channel NexFET™ Power MOSFET

1 Features

  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package

2 Applications

  • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
  • Optimized for Control FET Applications

3 Description

This 25-V, 8-mΩ, 3.3-mm × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Top View
CSD16411Q3 P0093-01.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 25 V
Qg Gate Charge Total (4.5 V) 2.9 nC
Qgd Gate Charge Gate-to-Drain 0.7 nC
RDS(on) Drain-to-Source On Resistance VGS = 4.5 V 12 mΩ
VGS = 10 V 8
VGS(th) Threshold Voltage 2 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD16411Q3 2500 13-Inch Reel SON
3.30-mm × 3.30-mm
Plastic Package		 Tape and Reel
CSD16411Q3T 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 25 V
VGS Gate-to-Source Voltage +16 / –12 V
ID Continuous Drain Current (Package Limited) 60 A
Continuous Drain Current (Silicon Limited), TC = 25°C 50
Continuous Drain Current(1) 14
IDM Pulsed Drain Current, TA = 25°C(2) 130 A
PD Power Dissipation(1) 2.87 W
Power Dissipation, TC = 25°C 35
TJ,
TSTG		 Operating Junction
Storage Temperature		 –55 to 150 °C
EAS Avalanche Energy, Single Pulse
ID = 18 A, L = 0.1 mH, RG = 25 Ω		 16 mJ
  1. RθJA = 45°C/W on 1-in2 Cu (2-oz) on 0.06-in thick FR4 PCB.
  2. Max RθJC = 3.5°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

RDS(ON) vs VGS

CSD16411Q3 D007_SLPS206A.gif

Gate Charge

CSD16411Q3 D004_SLPS206A_FP.gif

4 Revision History

Changes from A Revision (September 2010) to B Revision

  • Changed Description textGo
  • Added silicon limited continuous drain current to Absolute Maximum Ratings tableGo
  • Added max power dissipation at TC = 25°C to Absolute Maximum Ratings tableGo
  • Changed Note 2 in Absolute Maximum Ratings tableGo
  • Changed R θJA max from 59°C/W : to 55°C/WGo
  • Changed the SOA in Figure 10 to reflect measured dataGo
  • Added Device and Documentation Support sectionGo
  • Changed MECHANICAL DATA section to Mechanical, Packaging, and Orderable Information sectionGo

Changes from * Revision (August 2009) to A Revision

  • Changed Figure 1 text From: RθJA = 92°C/W To: Typical RθJA = 93°C/WGo
  • Changed Figure 10 text From: RθJA = 92°C/W To: Typical RθJA = 93°C/WGo
  • Changed Figure 11 X-axis valuesGo

5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 25 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 20 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = +16 / –12 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.7 2 2.3 V
RDS(on) Drain-to-source on resistance VGS = 4.5 V, ID = 10 A 12 15 mΩ
VGS = 10 V, ID = 10 A 8 10
gfs Transconductance VDS = 15 V, ID = 10 A 30 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0 V, VDS = 12.5 V, f = 1 MHz 440 570 pF
COSS Output capacitance 330 430 pF
CRSS Reverse transfer capacitance 33 43 pF
Rg Series gate resistance 0.8 1.6 Ω
Qg Gate charge total (4.5 V) VDS = 12.5 V, ID = 10 A 2.9 3.8 nC
Qgd Gate charge gate-to-drain 0.7 nC
Qgs Gate charge gate-to-source 1.5 nC
Qg(th) Gate charge at Vth 0.9 nC
QOSS Output charge VDS = 12.5 V, VGS = 0 V 6.5 nC
td(on) Turnon delay time VDS = 12.5 V, VGS = 4.5 V, ID = 10 A
RG = 2 Ω		 5.3 ns
tr Rise time 7.8 ns
td(off) Turnoff delay time 6 ns
tf Fall time 3.1 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IS = 10 A, VGS = 0 V 0.85 1 V
Qrr Reverse recovery charge VDD = 12.5 V, IF = 10 A, di/dt = 300 A/μs 11.7 nC
trr Reverse recovery time VDD = 12.5 V, IF = 10 A, di/dt = 300 A/μs 15.5 ns

5.2 Thermal Information

TA = 25°C (unless otherwise stated)
PARAMETER MIN TYP MAX UNIT
R θJC Junction-to-case thermal resistance(1) 3.5 °C/W
R θJA Junction-to-ambient thermal resistance(1) (2) 55 °C/W
(1) RθJC is determined with the device mounted on a 1-in2 2-oz Cu pad on a 1.5-in × 1.5-in 0.06-in thick FR4 board. RθJC is specified by design while RθJA is determined by the user’s board design.
(2) Device mounted on FR4 Material with 1-in2 of 2-oz Cu.
CSD16411Q3 m0161-01_lps202.gif
Max RθJA = 55°C/W when mounted on 1-in2 of 2-oz Cu.
CSD16411Q3 m0161-02_lps202.gif
Max RθJA = 160°C/W when mounted on minimum pad area of 2-oz Cu.

5.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD16411Q3 D001_SLPS206.png
Figure 1. Transient Thermal Impedance
CSD16411Q3 D002_SLPS206A.gif
Figure 2. Saturation Characteristics
CSD16411Q3 D004_SLPS206A.gif
VDS = 12.5 V, ID = 10 A
Figure 4. Gate Charge
CSD16411Q3 D006_SLPS206A.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD16411Q3 D008_SLPS206.gif
ID = 10 A, VGS = 10 V
Figure 8. On Resistance vs Temperature
CSD16411Q3 D010_SLPS206.gif
Single pulse, max RθJC = 3.5°C/W
Figure 10. Maximum Safe Operating Area
CSD16411Q3 D012_SLPS206A.gif
Figure 12. Maximum Drain Current vs Temperature
CSD16411Q3 D003_SLPS206A.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD16411Q3 D005_SLPS206A.gif
Figure 5. Capacitance
CSD16411Q3 D007_SLPS206A.gif
Figure 7. On Resistance vs Gate Voltage
CSD16411Q3 D009_SLPS206A.gif
Figure 9. Typical Diode Forward Voltage
CSD16411Q3 D011_SLPS206.gif
Figure 11. Single Pulse Unclamped Inductive Switching

 
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