SLPS259A December   2011  – September 2015 CSD16415Q5

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Q5 Tape and Reel Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 25 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 20 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = –12 V to 16 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 1.2 1.5 1.9 V
RDS(on) Drain-to-Source On Resistance VGS = 4.5 V, ID = 40 A 1.5 1.8 mΩ
VGS = 10 V, ID = 40 A 0.99 1.15 mΩ
gfs Transconductance VDS = 15 V, ID = 40 A 168 S
DYNAMIC CHARACTERISTICS
CISS Input Capacitance VGS = 0 V, VDS = 12.5 V, ƒ = 1 MHz 3150 4100 pF
COSS Output Capacitance 2530 3300 pF
CRSS Reverse Transfer Capacitance 175 230 pF
Rg Series Gate Resistance 1.2 2.4 Ω
Qg Gate Charge Total (4.5 V) VDS = 12.5 V, ID = 40 A 21 29 nC
Qgd Gate Charge, Gate-to-Drain 5.2 nC
Qgs Gate Charge, Gate-to-Source 8.3 nC
Qg(th) Gate Charge at Vth 4.8 nC
QOSS Output Charge VDS = 15 V, VGS = 0 V 55 nC
td(on) Turnon Delay Time VDS = 12.5 V, VGS = 4.5 V, ID = 40 A
RG = 2 Ω		 16.6 ns
tr Rise Time 30 ns
td(off) Turn Off Delay Time 20 ns
tf Fall Time 12.7 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage IS = 40 A, VGS = 0 V 0.85 1 V
Qrr Reverse Recovery Charge VDD = 15 V, IF = 40 A, di/dt = 300 A/μs 72 nC
trr Reverse Tecovery Time VDD = 15 V, IF = 40 A, di/dt = 300 A/μs 45 ns

5.2 Thermal Information

TA = 25°C (unless otherwise noted)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Thermal resistance, junction-to-case(1) 0.8 °C/W
RθJA Thermal resistance, junction-to-ambient(1) (2) 50 °C/W
(1) RθJC is determined with the device mounted on a 1 inch (2.54 cm) square, 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm × 3.81 cm), 0.060 inch (1.52 mm) thick FR4 board. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1 inch2 (6.45 cm2) of 2 oz. (0.071 mm thick) Cu.
CSD16415Q5 M0137-01_LPS198.gif
Max RθJA = 50°C/W when mounted on 1 inch2 (6.45 cm2) of 2 oz. (0.071 mm thick) Cu.
CSD16415Q5 M0137-02_LPS198.gif
Max RθJA = 125°C/W when mounted on minimum pad area of 2 oz. (0.071 mm thick) Cu.

5.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise noted)
CSD16415Q5 D001_SLPS259.png
Figure 1. Transient Thermal Impedance
CSD16415Q5 D002_SLPS259.gif
Figure 2. Saturation Characteristics
CSD16415Q5 D004_SLPS259.gif
ID = 40 A VDS = 12.5 V
Figure 4. Gate Charge
CSD16415Q5 D006_SLPS259.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD16415Q5 D008_SLPS259.gif
ID = 40 A
Figure 8. On-Resistance vs Temperature
CSD16415Q5 D010_SLPS259.gif
Single Pulse, Max RθJC = 0.8°C/W
Figure 10. Maximum Safe Operating Area
CSD16415Q5 D012_SLPS259.gif
Figure 12. Maximum Drain Current vs Temperature
CSD16415Q5 D003_SLPS259.gif
Figure 3. Transfer Characteristics
CSD16415Q5 D005_SLPS259.gif
Figure 5. Capacitance
CSD16415Q5 D007_SLPS259.gif
Figure 7. On-Resistance vs Gate Voltage
CSD16415Q5 D009_SLPS259.gif
Figure 9. Typical Diode Forward Voltage
CSD16415Q5 D011_SLPS259.gif
Figure 11. Single-Pulse Unclamped Inductive Switching