STATIC CHARACTERISTICS |
BVDSS |
Drain-to-Source Voltage |
VGS = 0 V, ID = 250 μA |
25 |
|
|
V |
IDSS |
Drain-to-Source Leakage Current |
VGS = 0 V, VDS = 20 V |
|
|
1 |
μA |
IGSS |
Gate-to-Source Leakage Current |
VDS = 0 V, VGS = –12 V to 16 V |
|
|
100 |
nA |
VGS(th) |
Gate-to-Source Threshold Voltage |
VDS = VGS, ID = 250 μA |
1.2 |
1.5 |
1.9 |
V |
RDS(on) |
Drain-to-Source On Resistance |
VGS = 4.5 V, ID = 40 A |
|
1.5 |
1.8 |
mΩ |
VGS = 10 V, ID = 40 A |
|
0.99 |
1.15 |
mΩ |
gfs |
Transconductance |
VDS = 15 V, ID = 40 A |
|
168 |
|
S |
DYNAMIC CHARACTERISTICS |
CISS |
Input Capacitance |
VGS = 0 V, VDS = 12.5 V, ƒ = 1 MHz |
|
3150 |
4100 |
pF |
COSS |
Output Capacitance |
|
2530 |
3300 |
pF |
CRSS |
Reverse Transfer Capacitance |
|
175 |
230 |
pF |
Rg |
Series Gate Resistance |
|
|
1.2 |
2.4 |
Ω |
Qg |
Gate Charge Total (4.5 V) |
VDS = 12.5 V, ID = 40 A |
|
21 |
29 |
nC |
Qgd |
Gate Charge, Gate-to-Drain |
|
5.2 |
|
nC |
Qgs |
Gate Charge, Gate-to-Source |
|
8.3 |
|
nC |
Qg(th) |
Gate Charge at Vth |
|
4.8 |
|
nC |
QOSS |
Output Charge |
VDS = 15 V, VGS = 0 V |
|
55 |
|
nC |
td(on) |
Turnon Delay Time |
VDS = 12.5 V, VGS = 4.5 V, ID = 40 A RG = 2 Ω |
|
16.6 |
|
ns |
tr |
Rise Time |
|
30 |
|
ns |
td(off) |
Turn Off Delay Time |
|
20 |
|
ns |
tf |
Fall Time |
|
12.7 |
|
ns |
DIODE CHARACTERISTICS |
VSD |
Diode Forward Voltage |
IS = 40 A, VGS = 0 V |
|
0.85 |
1 |
V |
Qrr |
Reverse Recovery Charge |
VDD = 15 V, IF = 40 A, di/dt = 300 A/μs |
|
72 |
|
nC |
trr |
Reverse Tecovery Time |
VDD = 15 V, IF = 40 A, di/dt = 300 A/μs |
|
45 |
|
ns |