JAJSDL0A February 2017 – July 2017 CSD17318Q2
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, ID = 250 μA | 30 | V | |||
IDSS | Drain-to-source leakage | VGS = 0 V, VDS = 24 V | 1 | μA | |||
IGSS | Gate-to-source leakage | VDS = 0 V, VGS = 10 V | 100 | nA | |||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250 μA | 0.6 | 0.9 | 1.2 | V | |
RDS(on) | Drain-to-source on-resistance | VGS = 2.5 V, ID = 8 A | 20 | 30 | mΩ | ||
VGS = 4.5 V, ID = 8 A | 13.9 | 16.9 | |||||
VGS = 8 V, ID = 8 A | 12.6 | 15.1 | |||||
gfs | Transconductance | VDS = 3 V, ID = 8 A | 42 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input capacitance | VGS = 0 V, VDS = 15 V, ƒ = 1 MHz |
676 | 879 | pF | ||
Coss | Output capacitance | 71 | 92 | pF | |||
Crss | Reverse transfer capacitance | 39 | 51 | pF | |||
RG | Series gate resistance | 1.0 | 2.0 | Ω | |||
Qg | Gate charge total (4.5 V) | VDS = 15 V, ID = 8 A |
6.0 | nC | |||
Qgd | Gate charge gate-to-drain | 1.3 | nC | ||||
Qgs | Gate charge gate-to-source | 1.5 | nC | ||||
Qg(th) | Gate charge at Vth | 0.7 | nC | ||||
Qoss | Output charge | VDS = 15 V, VGS = 0 V | 2.7 | nC | |||
td(on) | Turnon delay time | VDS = 15 V, VGS = 4.5 V, ID = 8 A, RG = 2 Ω |
5 | ns | |||
tr | Rise time | 16 | ns | ||||
td(off) | Turnoff delay time | 13 | ns | ||||
tf | Fall time | 4 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage | ISD = 8 A, VGS = 0 V | 0.8 | 1.0 | V | ||
Qrr | Reverse recovery charge | VDD= 15 V, IF = 8 A, di/dt = 300 A/μs |
2.9 | nC | |||
trr | Reverse recovery time | 12 | ns |
PARAMETER | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Thermal resistance junction-to-case(1) | 7.9 | °C/W | ||
RθJA | Thermal resistance junction-to-ambient(1)(2) | 65 | °C/W |
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Max RθJA = 65°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu. |
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Max RθJA = 250°C/W when mounted on a minimum pad area of 2-oz (0.071-mm) thick Cu. |
VDS = 5 V |
ID = 8 A | VDS = 15 V |
ID = 250 µA |
ID = 8 A |
Single pulse, max RθJC = 7.9°C/W |
ID = 8 A |