JAJSDP2C April   2016  – February 2022 CSD17382F4

PRODUCTION DATA  

  1. 1特長
  2. 2アプリケーション
  3. 3概要
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 サポート・リソース
    2. 6.2 Receiving Notification of Documentation Updates
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 CSD17382F4 Embossed Carrier Tape Dimensions

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • YJC|3
サーマルパッド・メカニカル・データ
発注情報

Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0 V, IDS = 250 μA30V
IDSSDrain-to-source leakage currentVGS = 0 V, VDS = 24 V1µA
IGSSGate-to-source leakage currentVDS = 0 V, VGS = 10 V5µA
VGS(th)Gate-to-source threshold voltageVDS = VGS, IDS = 250 μA0.70.91.2V
RDS(on)Drain-to-source on-resistanceVGS = 1.8 V, IDS =0.5 A110180mΩ
VGS = 2.5 V, IDS =0.5 A6782mΩ
VGS = 4.5 V, IDS = 0.5 A5667mΩ
VGS = 8.0 V, IDS = 0.5 A5464mΩ
gfsTransconductanceVDS = 3 V, IDS = 0.5 A5.9S
DYNAMIC CHARACTERISTICS
CissInput capacitanceVGS = 0 V, VDS = 15 V,
ƒ = 1 MHz
267347pF
CossOutput capacitance31.040.3pF
CrssReverse transfer capacitance15.019.5pF
RGSeries gate resistance220
QgGate charge total (4.5 V)VDS = 15 V, IDS = 0.5 A2.12.7nC
QgdGate charge gate-to-drain0.63nC
QgsGate charge gate-to-source0.41nC
Qg(th)Gate charge at Vth0.12nC
QossOutput chargeVDS = 15 V, VGS = 0 V1.53nC
td(on)Turn on delay timeVDS = 15 V, VGS = 4.5 V,
IDS = 0.5 A, RG = 0 Ω
59ns
trRise time111ns
td(off)Turn off delay time279ns
tfFall time270ns
DIODE CHARACTERISTICS
VSDDiode forward voltageISD = 0.5 A, VGS = 0 V0.71.0V