SLPS489A June   2014  – August 2014 CSD17575Q3

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q3 Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DQG|8
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Low Qg and Qgd
  • Low RDS(on)
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3 mm × 3.3 mm Plastic Package

2 Applications

  • Point of Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
  • Optimized for Synchronous FET Applications

3 Description

This 1.9 mΩ, 30 V, SON 3×3 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View
p0095-01_lps202.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5V) 23 nC
Qgd Gate Charge Gate-to-Drain 5.4 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 2.6 mΩ
VGS = 10 V 1.9
Vth Threshold Voltage 1.4 V


Ordering Information(1)

Device Media Qty Package Ship
CSD17575Q3 13-Inch Reel 2500 SON 3.3 × 3.3 mm
Plastic Package		 Tape and Reel
CSD17575Q3T 13-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limit) 60 A
Continuous Drain Current (Silicon Limit),
TC = 25°C		 182
Continuous Drain Current(1) 27
IDM Pulsed Drain Current(2) 240 A
PD Power Dissipation(1) 2.8 W
Power Dissipation, TC = 25°C 108
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 48, L = 0.1 mH, RG = 25 Ω		 115 mJ
  1. Typical RθJA = 45°C/W on 1-inch2 Cu (2 oz.) on 0.060-inch thick FR4 PCB.
  2. Max RθJC = 1.5°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

graph07_SLPS489.png

Gate Charge

graph04_SLPS489.png