SLPS497A June 2014 – May 2017 CSD17576Q5B
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain to Source Voltage | VGS = 0 V, ID = 250 μA | 30 | V | |||
IDSS | Drain to Source Leakage Current | VGS = 0 V, VDS = 24 V | 1 | μA | |||
IGSS | Gate to Source Leakage Current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate to Source Threshold Voltage | VDS = VGS, ID = 250 μA | 1.1 | 1.4 | 1.8 | V | |
RDS(on) | Drain to Source On Resistance | VGS = 4.5 V, ID = 25 A | 2.4 | 2.9 | mΩ | ||
VGS = 10 V, ID = 25 A | 1.7 | 2.0 | mΩ | ||||
gfs | Transconductance | VDS = 3 V, ID = 25 A | 120 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input Capacitance | VGS = 0V, VDS = 15 V, ƒ = 1 MHz | 3410 | 4430 | pF | ||
Coss | Output Capacitance | 389 | 506 | pF | |||
Crss | Reverse Transfer Capacitance | 151 | 196 | pF | |||
RG | Series Gate Resistance | 1.0 | 2.0 | Ω | |||
Qg | Gate Charge Total (4.5 V) | VDS = 15 V, ID = 25 A | 25 | 32 | nC | ||
Qg | Gate Charge Total (10 V) | 53 | 68 | nC | |||
Qgd | Gate Charge Gate to Drain | 5.4 | nC | ||||
Qgs | Gate Charge Gate to Source | 8.9 | nC | ||||
Qg(th) | Gate Charge at Vth | 4.7 | nC | ||||
Qoss | Output Charge | VDS = 30 V, VGS = 0 V | 12.3 | nC | |||
td(on) | Turn On Delay Time | VDS = 15 V, VGS = 10 V, IDS = 25 A, RG = 0 Ω |
5 | ns | |||
tr | Rise Time | 16 | ns | ||||
td(off) | Turn Off Delay Time | 23 | ns | ||||
tf | Fall Time | 3 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode Forward Voltage | ISD = 25 A, VGS = 0V | 0.8 | 1 | V | ||
Qrr | Reverse Recovery Charge | VDS= 15 V, IF = 25 A, di/dt = 300 A/μs |
14.7 | nC | |||
trr | Reverse Recovery Time | 14 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-Case Thermal Resistance (1) | 1.3 | °C/W | ||
RθJA | Junction-to-Ambient Thermal Resistance (1)(2) | 50 |
|
Max RθJA = 50°C/W when mounted on 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu. |
|
Max RθJA = 125°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu. |
ID = 25 A | VDS = 15 V | ||
ID = 250 µA | ||
ID = 25 A | ||
Single Pulse Max RθJC = 1.3°C/W | ||
VDS = 5 V | ||