SLPS515A August   2014  – January 2016 CSD17577Q3A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3A Package Dimensions
    2. 7.2 Q3A Recommended PCB Pattern
    3. 7.3 Q3A Recommended Stencil Pattern
    4. 7.4 Q3A Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DNH|8
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • SON 3.3 mm × 3.3 mm Package

2 Applications

  • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
  • Optimized for Control, and Sync FET Applications

3 Description

This 30 V, 4.0 mΩ, SON 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize resistance in power conversion applications.

Top Icon
CSD17577Q3A P0093-01_LPS198.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 12 nC
Qgd Gate Charge Gate-to-Drain 2.5 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 5.3 mΩ
VGS = 10 V 4.0 mΩ
VGS(th) Threshold Voltage 1.4 V

Ordering Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD17577Q3A 2500 13-Inch Reel SON 3.3 × 3.3 mm Plastic Package Tape and Reel
CSD17577Q3AT 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 35 A
Continuous Drain Current (Silicon limited), TC = 25°C 83
Continuous Drain Current (1) 19
IDM Pulsed Drain Current (2) 239 A
PD Power Dissipation(1) 2.5 W
Power Dissipation, TC = 25°C 53
TJ,
Tstg 		Operating Junction Temperature,
Storage Temperature		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 28 A, L = 0.1 mH, RG = 25 Ω		 39 mJ
  1. Typical RθJA = 50°C/W on a 1 inch2, 2 oz. Cu pad on a
    0.06 inch thick FR4 PCB.
  2. Max RθJC = 3.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

CSD17577Q3A graph07_SLPS515.png

Gate Charge

CSD17577Q3A graph04_frontpage_SLPS515.png