SLPS515A August   2014  – January 2016 CSD17577Q3A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3A Package Dimensions
    2. 7.2 Q3A Recommended PCB Pattern
    3. 7.3 Q3A Recommended Stencil Pattern
    4. 7.4 Q3A Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DNH|8
サーマルパッド・メカニカル・データ
発注情報

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 30 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 24 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.1 1.4 1.8 V
RDS(on) Drain-to-source on-resistance VGS = 4.5 V, ID = 10 A 5.3 6.4 mΩ
VGS = 10 V, ID = 16 A 4.0 4.8 mΩ
gfs Transconductance VDS = 15 V, ID = 16 A 76 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 15 V, ƒ = 1 MHz 1780 2310 pF
Coss Output capacitance 208 270 pF
Crss Reverse transfer capacitance 79 103 pF
RG Series gate resistance 1.4 2.8 Ω
Qg Gate charge total (4.5 V) VDS = 15 V, ID = 16 A 13 17 nC
Qg Gate charge total (10 V) 27 35 nC
Qgd Gate charge gate-to-drain 2.8 nC
Qgs Gate charge gate-to-source 5.1 nC
Qg(th) Gate charge at Vth 2.5 nC
Qoss Output charge VDS = 15 V, VGS = 0 V 6 nC
td(on) Turn on delay time VDS = 15 V, VGS = 10 V,
IDS = 16 A, RG = 0 Ω		 4 ns
tr Rise time 31 ns
td(off) Turn off delay time 20 ns
tf Fall time 4 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 16 A, VGS = 0 V 0.8 1 V
Qrr Reverse recovery charge VDS= 15 V, IF = 16 A,
di/dt = 300 A/μs		 8.2 nC
trr Reverse recovery time 8.6 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-case thermal resistance(1) 3.0 °C/W
RθJA Junction-to-ambient thermal resistance(1)(2) 55 °C/W
(1) RθJC is determined with the device mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inches × 1.5 inches
(3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
CSD17577Q3A m0161-01_lps202.gif
Max RθJA = 55°C/W when mounted on 1 inch2 (6.45 cm2) of
2 oz. (0.071 mm thick) Cu.
CSD17577Q3A m0161-02_lps202.gif
Max RθJA = 190°C/W when mounted on a minimum pad area of 2 oz. (0.071 mm thick) Cu.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD17577Q3A graph01_SLPS515.png
Figure 1. Transient Thermal Impedance
CSD17577Q3A graph02_SLPS515.png
Figure 2. Saturation Characteristics
CSD17577Q3A graph04_SLPS515.png
ID = 16 A VDS = 15 V
Figure 4. Gate Charge
CSD17577Q3A graph06_SLPS515.png
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD17577Q3A graph08_SLPS515.png
ID = 16 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD17577Q3A graph10p2_SLPS515.png
Single Pulse,
Max RθJC = 3.0°C/W
Figure 10. Maximum Safe Operating Area
CSD17577Q3A graph12p2_SLPS515.png
Figure 12. Maximum Drain Current vs Temperature
CSD17577Q3A graph03_SLPS515.png
VDS = 5 V
Figure 3. Transfer Characteristics
CSD17577Q3A graph05_SLPS515.png
Figure 5. Capacitance
CSD17577Q3A graph07_SLPS515.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD17577Q3A graph09_SLPS515.png
Figure 9. Typical Diode Forward Voltage
CSD17577Q3A graph11_SLPS515.png
Figure 11. Single Pulse Unclamped Inductive Switching