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This 30 V, 8.7 mΩ, SON 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
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TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V | |
Qg | Gate Charge Total (4.5 V) | 5.3 | nC | |
Qgd | Gate Charge Gate-to-Drain | 1.2 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 11.8 | mΩ |
VGS = 10 V | 8.7 | mΩ | ||
VGS(th) | Threshold Voltage | 1.5 | V |
DEVICE | MEDIA | QTY | PACKAGE | SHIP |
---|---|---|---|---|
CSD17579Q3A | 13-Inch Reel | 2500 | SON 3.3 × 3.3 mm Plastic Package |
Tape and Reel |
CSD17579Q3AT | 7-Inch Reel | 250 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited) | 20 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 39 | ||
Continuous Drain Current(1) | 11 | ||
IDM | Pulsed Drain Current(2) | 106 | A |
PD | Power Dissipation(1) | 2.5 | W |
Power Dissipation, TC = 25°C | 29 | ||
TJ, Tstg |
Operating Junction Temperature, Storage Temperature |
–55 to 150 | °C |
EAS | Avalanche Energy, single pulse ID = 17 A, L = 0.1 mH, RG = 25 Ω |
14 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, ID = 250 μA | 30 | V | |||
IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 24 V | 1 | μA | |||
IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250 μA | 1.1 | 1.5 | 1.9 | V | |
RDS(on) | Drain-to-source on-resistance | VGS = 4.5 V, ID = 8 A | 11.8 | 14.2 | mΩ | ||
VGS = 10 V, ID = 8 A | 8.7 | 10.2 | mΩ | ||||
gfs | Transconductance | VDS = 3 V, ID = 8 A | 37 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input capacitance | VGS = 0 V, VDS = 15 V, ƒ = 1 MHz | 768 | 998 | pF | ||
Coss | Output capacitance | 93 | 121 | pF | |||
Crss | Reverse transfer capacitance | 38 | 49 | pF | |||
RG | Series gate resistance | 1.9 | 3.8 | Ω | |||
Qg | Gate charge total (4.5 V) | VDS = 15 V, ID = 8 A | 5.3 | 6.9 | nC | ||
Qg | Gate charge total (10 V) | 11.5 | 15.0 | nC | |||
Qgd | Gate charge gate-to-drain | 1.2 | nC | ||||
Qgs | Gate charge gate-to-source | 2.2 | nC | ||||
Qg(th) | Gate charge at Vth | 1.1 | nC | ||||
Qoss | Output charge | VDS = 15 V, VGS = 0 V | 3.0 | nC | |||
td(on) | Turn on delay time | VDS = 15 V, VGS = 10 V, IDS = 8 A, RG = 0 Ω |
2 | ns | |||
tr | Rise time | 5 | ns | ||||
td(off) | Turn off delay time | 11 | ns | ||||
tf | Fall time | 1 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage | ISD = 8 A, VGS = 0 V | 0.8 | 1.0 | V | ||
Qrr | Reverse recovery charge | VDS= 15 V, IF = 8 A, di/dt = 300 A/μs |
3.4 | nC | |||
trr | Reverse recovery time | 5 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-case thermal resistance (1) | 5.4 | °C/W | ||
RθJA | Junction-to-ambient thermal resistance(1)(2) | 60 | °C/W |
![]() |
Max RθJA = 60°C/W when mounted on 1 inch2 (6.45 cm2) of 2 oz. (0.071 mm thick) Cu. |
![]() |
Max RθJA = 145°C/W when mounted on a minimum pad area of 2 oz. (0.071 mm thick) Cu. |
ID = 8 A | VDS = 15 V | |
ID = 250 µA | ||
ID = 8 A | ||
Single Pulse, | ||
Max RθJC = 5.4°C/W |
VDS = 5 V | ||
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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