SLPS524 March   2015 CSD17579Q5A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5A Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q5A Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DQJ|8
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Low Qg and Qgd
  • Low RDS(on)
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

2 Applications

  • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
  • Optimized for Control FET Applications

3 Description

This 30 V, 8.4 mΩ, SON 5 mm x 6mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View
CSD17579Q5A P0093-01_LPS198.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 5.4 nC
Qgd Gate Charge Gate-to-Drain 1.2 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 11.6 mΩ
VGS = 10 V 8.4 mΩ
VGS(th) Threshold Voltage 1.5 V


Ordering Information(1)

Device Media Qty Package Ship
CSD17579Q5A 13-Inch Reel 2500 SON 5 x 6 mm
Plastic Package		 Tape and Reel
CSD17579Q5AT 7-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 25 A
Continuous Drain Current (Silicon limited), TC = 25°C 46
Continuous Drain Current(1) 14
IDM Pulsed Drain Current(2) 105 A
PD Power Dissipation(1) 3.1 W
Power Dissipation, TC = 25°C 36
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 17 A, L = 0.1 mH		 14.5 mJ
  1. Typical RθJA = 40°C/W on a 1 inch2, 2 oz. Cu pad on a 0.06 inch thick FR4 PCB.
  2. Max RθJC = 4.3 °C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

CSD17579Q5A D007_SLPS524.gif

Gate Charge

CSD17579Q5A D004_SLPS524_FP.gif