SLPS358C June   2012  – June 2015 CSD18503Q5A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5A Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q5A Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DQJ|8
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

2 Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Battery Motor Control

3 Description

This 40 V, 3.4 mΩ, 5 x 6 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View

CSD18503Q5A P0093-01_LPS198.gif

Text added for spacing

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-source voltage 40 V
Qg Gate charge total (4.5 V) 13 nC
Qgd Gate charge gate-to-drain 4.3 nC
RDS(on) Drain-to-source on-resistance VGS = 4.5 V 4.7 mΩ
VGS = 10 V 3.4 mΩ
VGS(th) Threshold voltage 1.8 V

Ordering Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD18503Q5A 2500 13-Inch Reel SON 5 mm × 6 mm Plastic Package Tape and Reel
CSD18503Q5AT 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-source voltage 40 V
VGS Gate-to-source voltage ±20 V
ID Continuous drain current (package limited), TC = 25°C 100 A
Continuous drain current (silicon limited), TC = 25°C 121
Continuous drain current, TA = 25°C(1) 19
IDM Pulsed drain current, TA = 25°C(2) 321 A
PD Power dissipation(1) 3.1 W
Power dissipation, TC = 25°C 120
TJ,
Tstg		 Operating junction,
Storage temperature		 –55 to 150 °C
EAS Avalanche energy, single pulse
ID = 56 A, L = 0.1 mH, RG = 25 Ω		 157 mJ
  1. Typical RθJA = 40°C/W on a 1 inch2, 2 oz. Cu pad on a 0.06 inch thick FR4 PCB.
  2. Max RθJC = 1.3°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

CSD18503Q5A D007_SLPS358.gif

Gate Charge

CSD18503Q5A D004_SLPS358_FP.gif