SLPS366E June   2012  – September 2014 CSD18504Q5A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5A Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q5A Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DQJ|8
サーマルパッド・メカニカル・データ
発注情報

4 Revision History

Changes from D Revision (August 2014) to E Revision

  • Increased pulsed current to 275 A Go
  • Updated the SOA in Figure 10Go

Changes from C Revision (May 2013) to D Revision

  • Added 7-inch reel to Ordering Information table Go
  • Added parameter for power dissipation with case temperature held to 25°C Go
  • Updated pulsed current conditions Go
  • Updated Figure 1 to a normalized RθJC curveGo

Changes from B Revision (November 2012) to C Revision

  • Updated this drawing table to include E3, e1, and e2 dimensions Go
  • Added Stencil Pattern Go

Changes from A Revision (October 2012) to B Revision

  • Changed the RDS(on) vs VGS and Gate Charger graphsGo
  • Changed RθJA Max value From: 51 To: 50°C/WGo
  • Changed the Typical MOSFET Characteristics sectionGo

Changes from * Revision (June 2012) to A Revision

  • Changed the Transconductance TYP value From: 63 S To: 71 SGo
  • Changed the Turn On and Turn Off Delay Time, Rise and Fall Time Test Conditions From: IDS = 17 A, RG = 2 Ω To: IDS = 17 A, RG = 0 ΩGo
  • Changed the Qrr Reverse Recovery Charge TYP value From: 18 nC To: 39 nCGo