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This 40 V, 1 mΩ, SON 5 x 6 NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 40 | V | |
Qg | Gate Charge Total (10 V) | 150 | nC | |
Qgd | Gate Charge Gate to Drain | 17 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = 4.5 V | 1.3 | mΩ |
VGS = 10 V | 1.0 | mΩ | ||
VGS(th) | Threshold Voltage | 1.8 | V |
Device | Qty | Media | Package | Ship |
---|---|---|---|---|
CSD18509Q5B | 2500 | 13-Inch Reel | SON 5 × 6 mm Plastic Package | Tape and Reel |
CSD18509Q5BT | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 40 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited) | 100 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 299 | ||
Continuous Drain Current(1) | 38 | ||
IDM | Pulsed Drain Current, TA = 25°C(2) | 400 | A |
PD | Power Dissipation(1) | 3.1 | W |
Power Dissipation, TC = 25°C | 195 | ||
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
EAS | Avalanche Energy, single pulse ID = 83, L = 0.1 mH, RG = 25 Ω |
345 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |
Changes from * Revision (June 2014) to A Revision
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | 40 | V | |||
IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = 32 V | 1 | μA | |||
IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250 μA | 1.4 | 1.8 | 2.2 | V | |
RDS(on) | Drain-to-Source On Resistance | VGS = 4.5 V, ID = 32 A | 1.3 | 1.7 | mΩ | ||
VGS = 10 V, ID = 32 A | 1 | 1.2 | mΩ | ||||
gfs | Transconductance | VDS = 4 V, ID = 32 A | 180 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input Capacitance | VGS = 0 V, VDS = 20 V, ƒ = 1 MHz | 10700 | 13900 | pF | ||
Coss | Output Capacitance | 821 | 1070 | pF | |||
Crss | Reverse Transfer Capacitance | 272 | 354 | pF | |||
RG | Series Gate Resistance | 0.8 | 1.6 | Ω | |||
Qg | Gate Charge Total (4.5 V) | VDS = 20 V, ID = 32 A | 70 | 91 | nC | ||
Qg | Gate Charge Total (10 V) | 150 | 195 | nC | |||
Qgd | Gate Charge Gate-to-Drain | 17 | nC | ||||
Qgs | Gate Charge Gate-to-Source | 29 | nC | ||||
Qg(th) | Gate Charge at Vth | 18 | nC | ||||
Qoss | Output Charge | VDS = 20 V, VGS = 0 V | 39 | nC | |||
td(on) | Turn On Delay Time | VDS = 20 V, VGS = 10 V, IDS = 32 A, RG = 0 Ω |
9 | ns | |||
tr | Rise Time | 19 | ns | ||||
td(off) | Turn Off Delay Time | 57 | ns | ||||
tf | Fall Time | 11 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode Forward Voltage | ISD = 32 A, VGS = 0 V | 0.8 | 1 | V | ||
Qrr | Reverse Recovery Charge | VDS= 20 V, IF = 32 A, di/dt = 300 A/μs |
40 | nC | |||
trr | Reverse Recovery Time | 23 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-Case Thermal Resistance(1) | 0.8 | °C/W | ||
RθJA | Junction-to-Ambient Thermal Resistance (1)(2) | 50 |
![]() |
Max RθJA = 50°C/W when mounted on 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu. |
![]() |
Max RθJA = 125°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu. |
ID = 32 A | VDS = 20 V | |
ID = 250 µA | ||
ID = 32 A | ||
Single Pulse, Max RθJC = 0.8°C/W | ||
VDS = 5 V | ||
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NexFET, E2E are trademarks of Texas Instruments.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
The following pages include mechanical packaging and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
DIM | MILLIMETERS | ||
---|---|---|---|
MIN | NOM | MAX | |
A | 0.80 | 1.00 | 1.05 |
b | 0.36 | 0.41 | 0.46 |
c | 0.15 | 0.20 | 0.25 |
c1 | 0.15 | 0.20 | 0.25 |
c2 | 0.20 | 0.25 | 0.30 |
D1 | 4.90 | 5.00 | 5.10 |
D2 | 4.12 | 4.22 | 4.32 |
D3 | 3.90 | 4.00 | 4.10 |
d | 0.20 | 0.25 | 0.30 |
d1 | 0.085 TYP | ||
d2 | 0.319 | 0.369 | 0.419 |
E | 4.90 | 5.00 | 5.10 |
E1 | 5.90 | 6.00 | 6.10 |
E2 | 3.48 | 3.58 | 3.68 |
e | 1.27 TYP | ||
H | 0.36 | 0.46 | 0.56 |
L | 0.46 | 0.56 | 0.66 |
L1 | 0.57 | 0.67 | 0.77 |
θ | 0° | — | — |
K | 1.40 TYP |
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCB Layout Techniques.
Notes: