JAJSD21 March   2017 CSD18510Q5B

PRODUCTION DATA.  

  1. 1特長
  2. 2アプリケーション
  3. 3概要
  4. 4改訂履歴
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6デバイスおよびドキュメントのサポート
    1. 6.1 ドキュメントの更新通知を受け取る方法
    2. 6.2 コミュニティ・リソース
    3. 6.3 商標
    4. 6.4 静電気放電に関する注意事項
    5. 6.5 Glossary
  7. 7メカニカル、パッケージ、および注文情報
    1. 7.1 Q5Bパッケージの寸法
    2. 7.2 推奨されるPCBパターン
    3. 7.3 推奨されるステンシル・パターン
    4. 7.4 Q5Bのテープ・アンド・リール情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 40 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 32 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.2 1.7 2.3 V
RDS(on) Drain-to-source on resistance VGS = 4.5 V, ID = 32 A 1.2 1.6 mΩ
VGS = 10 V, ID = 32 A 0.79 0.96
gfs Transconductance VDS = 4 V, ID = 32 A 147 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 20 V, ƒ = 1 MHz 8770 11400 pF
Coss Output capacitance 832 1080 pF
Crss Reverse transfer capacitance 424 551 pF
RG Series gate resistance 0.9 1.8 Ω
Qg Gate charge total (4.5 V) VDS = 20 V, ID = 32 A 58 75 nC
Qg Gate charge total (10 V) 118 153 nC
Qgd Gate charge gate-to-drain 21 nC
Qgs Gate charge gate-to-source 28 nC
Qg(th) Gate charge at Vth 15 nC
Qoss Output charge VDS = 20 V, VGS = 0 V 35 nC
td(on) Turnon delay time VDS = 20 V, VGS = 10 V,
IDS = 32 A, RG = 0 Ω		 8 ns
tr Rise time 17 ns
td(off) Turnoff delay time 44 ns
tf Fall time 15 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 32 A, VGS = 0 V 0.8 1.0 V
Qrr Reverse recovery charge VDS= 20 V, IF = 32 A,
di/dt = 300 A/μs		 31 nC
trr Reverse recovery time 19 ns

5.2 Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-case thermal resistance(1) 0.8 °C/W
RθJA Junction-to-ambient thermal resistance(1)(2) 50 °C/W
(1) RθJC is determined with the device mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.

CSD18510Q5B M0137-01_LPS198.gif
Max RθJA = 50°C/W when mounted on 1 in2 (6.45 cm2) of
2-oz (0.071-mm) thick Cu.
CSD18510Q5B M0137-02_LPS198.gif
Max RθJA = 125°C/W when mounted on a minimum pad area of 2-oz (0.071-mm) thick Cu.

5.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD18510Q5B D001_SLPS632.gif
Figure 1. Transient Thermal Impedance
CSD18510Q5B D002_SLPS632.gif
Figure 2. Saturation Characteristics
CSD18510Q5B D004_SLPS632.gif
ID = 32 A VDS = 20 V
Figure 4. Gate Charge
CSD18510Q5B D006_SLPS632.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD18510Q5B D008_SLPS632.gif
ID = 32 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD18510Q5B D010_SLPS632.gif
Single pulse, max RθJC = 0.8°C/W
Figure 10. Maximum Safe Operating Area
CSD18510Q5B D012_SLPS632.gif
Figure 12. Maximum Drain Current vs Temperature
CSD18510Q5B D003_SLPS632.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD18510Q5B D005_SLPS632.gif
Figure 5. Capacitance
CSD18510Q5B D007_SLPS632.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD18510Q5B D009_SLPS632.gif
Figure 9. Typical Diode Forward Voltage
CSD18510Q5B D011_SLPS632.gif
Figure 11. Single Pulse Unclamped Inductive Switching