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This 60-V, 3.5-mΩ, 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD18531Q5A | 2500 | 13-Inch Reel | SON 5.00-mm × 6.00-mm Plastic Package |
Tape and Reel |
CSD18531Q5AT | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 60 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package Limited) | 100 | A |
Continuous Drain Current (Silicon Limited), TC = 25°C | 134 | ||
Continuous Drain Current(1) | 19 | ||
IDM | Pulsed Drain Current(2) | 400 | A |
PD | Power Dissipation(1) | 3.8 | W |
Power Dissipation, TC = 25°C | 156 | ||
TJ | Operating Junction | –55 to 175 | °C |
Tstg | Storage Temperature | –55 to 175 | °C |
EAS | Avalanche Energy, Single Pulse ID = 67 A, L = 0.1 mH, RG = 25 Ω |
224 | mJ |
Changes from F Revision (October 2016) to G Revision
Changes from E Revision (August 2015) to F Revision
Changes from D Revision (May 2015) to E Revision
Changes from C Revision (March 2015) to D Revision
Changes from B Revision (October 2012) to C Revision
Changes from A Revision (June 2012) to B Revision
Changes from * Revision (June 2012) to A Revision
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-case thermal resistance(1) | 1.0 | °C/W | ||
RθJA | Junction-to-ambient thermal resistance(1)(2) | 50 | °C/W |
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Max RθJA = 50°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu. |
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Max RθJA = 125°C/W when mounted on a minimum pad area of 2-oz (0.071-mm) thick Cu. |
VDS = 30 V | ID = 22 A |
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
DIM | MILLIMETERS | ||
---|---|---|---|
MIN | NOM | MAX | |
A | 0.90 | 1.00 | 1.10 |
b | 0.33 | 0.41 | 0.51 |
c | 0.20 | 0.25 | 0.34 |
D1 | 4.80 | 4.90 | 5.00 |
D2 | 3.61 | 3.81 | 4.02 |
E | 5.90 | 6.00 | 6.10 |
E1 | 5.70 | 5.75 | 5.80 |
E2 | 3.38 | 3.58 | 3.78 |
e | 1.17 | 1.27 | 1.37 |
H | 0.41 | 0.56 | 0.71 |
K | 1.10 | — | — |
L | 0.51 | 0.61 | 0.71 |
L1 | 0.06 | 0.13 | 0.20 |
θ | 0° | — | 12° |
DIM | MILLIMETERS | INCHES | ||
---|---|---|---|---|
MIN | MAX | MIN | MAX | |
F1 | 6.205 | 6.305 | 0.244 | 0.248 |
F2 | 4.46 | 4.56 | 0.176 | 0.18 |
F3 | 4.46 | 4.56 | 0.176 | 0.18 |
F4 | 0.65 | 0.7 | 0.026 | 0.028 |
F5 | 0.62 | 0.67 | 0.024 | 0.026 |
F6 | 0.63 | 0.68 | 0.025 | 0.027 |
F7 | 0.7 | 0.8 | 0.028 | 0.031 |
F8 | 0.65 | 0.7 | 0.026 | 0.028 |
F9 | 0.62 | 0.67 | 0.024 | 0.026 |
F10 | 4.9 | 5 | 0.193 | 0.197 |
F11 | 4.46 | 4.56 | 0.176 | 0.18 |
For recommended circuit layout for PCB designs, see Reducing Ringing Through PCB Layout Techniques (SLPA005).
Notes: