4 Revision History

Changes from F Revision (October 2016) to G Revision

• Changed temperature range from 150°C : to 175°CGo
• Changed I_DM using 175°C data from 370 A : to 400 AGo
• Changed P_D using 175°C data from 3.1 W : to 3.8 WGo
• Changed Figure 6 to extend to 175°CGo
• Changed Figure 8 to extend to 175°CGo
• Changed Figure 10 using 175°C dataGo
• Changed Figure 12 to extend to 175°CGo

Changes from E Revision (August 2015) to F Revision

• Changed the 125°C RDS(on) vs VGS curve to reflect typical part characterizationGo
• Changed the 125°C curve in Figure 7 to reflect typical part characterizationGo
• Added Receiving Notification of Documentation Updates section to the Device and Documentation Support sectionGo

Changes from D Revision (May 2015) to E Revision

• Corrected device size in description from m to mm.Go
• Corrected package type to SON. Go

Changes from C Revision (March 2015) to D Revision

• Added Community Resources. Go

Changes from B Revision (October 2012) to C Revision

• Added part number to title. Go
• Changed Q_g value to 36 nC, measured at 10 V. Go
• Added 7" reel to Ordering Information. Go
• Increase max pulsed current to 370 A. Go
• Added line for max power dissipation with the case temperature held to 25°C.Go
• Updated pulsed current conditions. Go
• Updated Figure 1 to show Z_θJC curves.Go
• Updated Figure 10Go
• Updated Figure 12. Go

Changes from A Revision (June 2012) to B Revision

• Changed the Transconductance TYP value From: 177 S To: 128 S.Go
• Changed the Turn On and Turn Off Delay Time, Rise and Fall Time Test. Conditions From: I_DS = 22 A, R_G = 2 Ω To: I_DS = 22 A, R_G = 0 Ω. Go
• Changed the Q_rr Reverse Recovery Charge TYP value From: 68 nC To: 100 nC. Go

Changes from * Revision (June 2012) to A Revision

• Added T_A = 25°C to the Product Summary tableGo