JAJSTS0D September 2012 – March 2024 CSD18533KCS
PRODUCTION DATA
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-source voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Drain-to-source leakage current | VGS = 0V, VDS = 48V | 1 | μA | |||
| IGSS | Gate-to-source leakage current | VDS = 0V, VGS = 20V | 100 | nA | |||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250μA | 1.5 | 1.9 | 2.3 | V | |
| RDS(on) | Drain-to-source on-resistance | VGS = 4.5V, ID = 75A | 6.9 | 9.0 | mΩ | ||
| VGS = 10V, ID = 75A | 5.0 | 6.3 | mΩ | ||||
| gfs | Transconductance | VDS = 30V, ID = 75A | 150 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input capacitance | VGS = 0V, VDS = 30V, ƒ = 1MHz | 2420 | 3025 | pF | ||
| Coss | Output capacitance | 300 | 375 | pF | |||
| Crss | Reverse transfer capacitance | 7 | 9.1 | pF | |||
| RG | Series gate resistance | 1.4 | 2.8 | Ω | |||
| Qg | Gate charge total (4.5V) | VDS = 30V, ID = 75A | 14 | 17 | nC | ||
| Qg | Gate charge total (10V) | 28 | 34 | nC | |||
| Qgd | Gate charge gate-to-drain | 3.9 | nC | ||||
| Qgs | Gate charge gate-to-source | 9.4 | nC | ||||
| Qg(th) | Gate charge at Vth | 4.6 | nC | ||||
| Qoss | Output charge | VDS = 30V, VGS = 0V | 31 | nC | |||
| td(on) | Turn on delay time | VDS =
30V, VGS = 10V, IDS = 75A, RG = 0Ω | 5.7 | ns | |||
| tr | Rise time | 4.8 | ns | ||||
| td(off) | Turn off delay time | 13 | ns | ||||
| tf | Fall time | 3.2 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode forward voltage | ISD = 75A, VGS = 0V | 0.8 | 1 | V | ||
| Qrr | Reverse recovery charge | VDS=
30V, IF = 75A, di/dt = 300A/μs | 97 | nC | |||
| trr | Reverse recovery time | 49 | ns | ||||