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This 60-V, 1.6-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
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TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 60 | V | |
Qg | Gate Charge Total (10 V) | 63 | nC | |
Qgd | Gate Charge Gate-to-Drain | 10.4 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 2.3 | mΩ |
VGS = 10 V | 1.6 | mΩ | ||
VGS(th) | Threshold Voltage | 1.9 | V |
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD18535KTT | 500 | 13-Inch Reel | D2PAK Plastic Package | Tape & Reel |
CSD18535KTTT | 50 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 60 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited) | 200 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 279 | A | |
Continuous Drain Current (Silicon limited), TC = 100°C | 197 | A | |
IDM | Pulsed Drain Current (1) | 400 | A |
PD | Power Dissipation | 300 | W |
TJ, Tstg |
Operating Junction and Storage Temperature |
–55 to 175 | °C |
EAS | Avalanche Energy, Single Pulse ID = 111 A, L = 0.1 mH, RG = 25 Ω |
616 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |
DATE | REVISION | NOTES |
---|---|---|
March 2016 | * | Initial release. |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, ID = 250 μA | 60 | V | |||
IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 48 V | 1 | μA | |||
IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250 μA | 1.4 | 1.9 | 2.4 | V | |
RDS(on) | Drain-to-source on-resistance | VGS = 4.5 V, ID = 100 A | 2.3 | 2.9 | mΩ | ||
VGS = 10 V, ID = 100 A | 1.6 | 2.0 | mΩ | ||||
gfs | Transconductance | VDS = 6 V, ID = 100 A | 263 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input capacitance | VGS = 0 V, VDS = 30 V, ƒ = 1 MHz | 5090 | 6620 | pF | ||
Coss | Output capacitance | 890 | 1150 | pF | |||
Crss | Reverse transfer capacitance | 24 | 31 | pF | |||
RG | Series gate resistance | 0.8 | 1.6 | Ω | |||
Qg | Gate charge total (10 V) | VDS = 30 V, ID = 100 A | 63 | 81 | nC | ||
Qgd | Gate charge gate-to-drain | 10.4 | nC | ||||
Qgs | Gate charge gate-to-source | 15.7 | nC | ||||
Qg(th) | Gate charge at Vth | 9.4 | nC | ||||
Qoss | Output charge | VDS = 30 V, VGS = 0 V | 140 | nC | |||
td(on) | Turn on delay time | VDS = 30 V, VGS = 10 V, IDS = 100 A, RG = 0 Ω |
9 | ns | |||
tr | Rise time | 3 | ns | ||||
td(off) | Turn off delay time | 19 | ns | ||||
tf | Fall time | 3 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage | ISD = 100 A, VGS = 0 V | 0.9 | 1.0 | V | ||
Qrr | Reverse recovery charge | VDS= 30 V, IF = 100 A, di/dt = 300 A/μs |
214 | nC | |||
trr | Reverse recovery time | 63 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-case thermal resistance | 0.5 | °C/W | ||
RθJA | Junction-to-ambient thermal resistance | 62 | °C/W |
VDS = 5 V | ||
VDS = 30 V | ID = 100 A | ||
ID = 250 µA | ||
ID = 100 A | ||
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Notes:
POSITION | DESIGNATION |
---|---|
Pin 1 | Gate |
Pin 2 / Tab | Drain |
Pin 3 | Source |
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCB Layout Techniques.
Notes: