SLPS391B June   2013  – July 2014 CSD18537NQ5A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5A Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q5A Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DQJ|8
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

2 Applications

  • High-Side Synchronous Buck Converter
  • Motor Control

3 Description

This 10 mΩ, 60 V, SON 5 mm x 6 mm NexFET™power MOSFET is designed to minimize losses in power conversion applications.

Top View
P0093-01_LPS198.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 60 V
Qg Gate Charge Total (10 V) 14 nC
Qgd Gate Charge Gate-to-Drain 2.3 nC
RDS(on) Drain-to-Source On Resistance VGS = 6 V 13 mΩ
VGS = 10 V 10 mΩ
VGS(th) Threshold Voltage 3 V

Ordering Information(1)

Device Qty Media Package Ship
CSD18537NQ5A 2500 13-Inch Reel SON 5 x 6 mm Plastic Package Tape and Reel
CSD18537NQ5AT 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 60 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 50 A
Continuous Drain Current (Silicon limited), TC = 25°C 54
Continuous Drain Current(1) 11
IDM Pulsed Drain Current(2) 151 A
PD Power Dissipation(1) 3.2 W
Power Dissipation, TC = 25°C 75
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 33 A, L = 0.1 mH, RG = 25 Ω		 55 mJ
  1. Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a
    0.06-inch thick FR4 PCB.
  2. Max RθJC = 2.1°C/W, pulse duration ≤100 µs, duty cycle
    ≤1%

RDS(on) vs VGS

graph07_SLPS391.png

Gate Charge

graph04_SLPS391.png