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This 1.8-mΩ, 60-V NexFET™ power MOSFET is designed to minimize losses in power conversion applications with a SON 5-mm × 6-mm package.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 60 | V | |
Qg | Gate Charge Total (10 V) | 41 | nC | |
Qgd | Gate Charge Gate-to-Drain | 6.7 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = 4.5 V | 2.6 | mΩ |
VGS = 10 V | 1.8 | |||
VGS(th) | Threshold Voltage | 1.9 | V |
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD18540Q5B | 2500 | 13-Inch Reel | SON 5.00-mm × 6.00-mm Plastic Package |
Tape and Reel |
CSD18540Q5BT | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 60 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package Limited) | 100 | A |
Continuous Drain Current (Silicon Limited), TC = 25°C | 205 | ||
Continuous Drain Current(1) | 29 | ||
IDM | Pulsed Drain Current, TA = 25°C(2) | 400 | A |
PD | Power Dissipation(1) | 3.8 | W |
Power Dissipation, TC = 25°C | 188 | ||
TJ, Tstg |
Operating Junction, Storage Temperature |
–55 to 175 | °C |
EAS | Avalanche Energy, Single Pulse ID = 80 A, L = 0.1 mH, RG = 25 Ω |
320 | mJ |
RDS(on) vs VGS![]() |
Gate Charge![]() |
Changes from A Revision (June 2016) to B Revision
Changes from * Revision (June 2014) to A Revision
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, ID = 250 μA | 60 | V | |||
IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 48 V | 1 | μA | |||
IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, I = 250 μA | 1.5 | 1.9 | 2.3 | V | |
RDS(on) | Drain-to-source on resistance | VGS = 4.5 V, ID = 28 A | 2.6 | 3.3 | mΩ | ||
VGS = 10 V, ID = 28 A | 1.8 | 2.2 | |||||
gfs | Transconductance | VDS = 6 V, ID = 28 A | 116 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input capacitance | VGS = 0 V, VDS = 30 V, ƒ = 1 MHz | 3250 | 4230 | pF | ||
Coss | Output capacitance | 622 | 808 | pF | |||
Crss | Reverse transfer capacitance | 15 | 20 | pF | |||
RG | Series gate resistance | 0.8 | 1.6 | Ω | |||
Qg | Gate charge total (4.5 V) | VDS = 30 V, IDD = 28 A | 20 | 26 | nC | ||
Qg | Gate charge total (10 V) | 41 | 53 | nC | |||
Qgd | Gate charge gate-to-drain | 6.7 | nC | ||||
Qgs | Gate charge gate-to-source | 8.8 | nC | ||||
Qg(th) | Gate charge at Vth | 6.3 | nC | ||||
Qoss | Output charge | VDS = 30 V, VGS = 0 V | 83 | nC | |||
td(on) | Turnon delay time | VDS = 30 V, VGS = 10 V, IDS = 28 A, RG = 0 Ω |
6 | ns | |||
tr | Rise time | 9 | ns | ||||
td(off) | Turnoff delay time | 20 | ns | ||||
tf | Fall time | 3 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage | ISD = 28 A, VGS = 0 V | 0.8 | 1 | V | ||
Qrr | Reverse recovery charge | VDS= 30 V, IF = 28 A, di/dt = 300 A/μs |
145 | nC | |||
trr | Reverse recovery time | 82 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-case thermal resistance(1) | 0.8 | °C/W | ||
RθJA | Junction-to-ambient thermal resistance(1)(2) | 50 |
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Max RθJA = 50°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu. |
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Max RθJA = 125°C/W when mounted on a minimum pad area of 2-oz (0.071-mm) thick Cu. |
ID = 28 A | VDS = 30 V | ||
VDS = 5 V | ||